Bottom-Up Assembly of Single-Domain Titania Nanosheets on T Orzali, M Casarin, G Granozzi, M Sambi, A Vittadini
Physical review letters 97 (15), 156101, 2006
89 2006 Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
81 2011 GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction T Orzali, A Vert, B O'Brien, JL Herman, S Vivekanand, RJW Hill
Journal of Applied Physics 118, 105307, 2015
65 2015 Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
ECS Transactions 45 (4), 115, 2012
61 2012 Selective area growth of InP on On-Axis Si (001) substrates with low antiphase boundary formation R Loo, G Wang, T Orzali, N Waldron, C Merckling, MR Leys, O Richard, ...
Journal of The Electrochemical Society 159 (3), H260, 2012
36 2012 Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping T Orzali, A Vert, B O'Brian, JL Herman, S Vivekanand, SS Papa Rao, ...
Journal of Applied Physics 120 (8), 085308, 2016
34 2016 L0.53 Ga0.47 As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2 O3 /HfO2 Gate-Stack TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ...
IEEE Electron Device Letters 36 (3), 223-225, 2015
34 2015 Strong bonding of single C60 molecules to (1× 2)-Pt (110): an STM/DFT investigation M Casarin, D Forrer, T Orzali, M Petukhov, M Sambi, E Tondello, ...
The Journal of Physical Chemistry C 111 (26), 9365-9373, 2007
32 2007 Temperature-dependent self-assemblies of c60 on (1× 2)-pt (110): A stm/dft investigation T Orzali, D Forrer, M Sambi, A Vittadini, M Casarin, E Tondello
The Journal of Physical Chemistry C 112 (2), 378-390, 2008
25 2008 Ultrathin TiO2 Films on (1×2)-Pt(110): a LEED, Photoemission, STM, and Theoretical Investigation S Agnoli, T Orzali, M Sambi, A Vittadini, M Casarin, G Granozzi
The Journal of Physical Chemistry C 112 (50), 20038-20049, 2008
23 2008 Reactive deposition of NiO ultrathin films on Pd (1 0 0) T Orzali, S Agnoli, M Sambi, G Granozzi
Surface science 569 (1-3), 105-117, 2004
23 2004 Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2 O3 /HfO2 Gate-Stack TW Kim, HM Kwon, SH Shin, CS Shin, WK Park, E Chiu, M Rivera, JI Lew, ...
IEEE Electron Device Letters 36 (7), 672-674, 2015
22 2015 Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers T Orzali, A Vert, RTP Lee, A Norvilas, G Huang, JL Herman, RJW Hill, ...
Journal of crystal Growth 426, 243-247, 2015
18 2015 Reactive growth of NiO ultrathin films on Pd (1 0 0): a multitechnique approach S Agnoli, T Orzali, M Sambi, G Granozzi, J Schoiswohl, S Surnev, ...
Journal of electron spectroscopy and related phenomena 144, 465-469, 2005
15 2005 Growth and characterization of an In0. 53Ga0. 47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD T Orzali, A Vert, TW Kim, PY Hung, JL Herman, S Vivekanand, G Huang, ...
Journal of Crystal Growth 427, 72-79, 2015
14 2015 Integration of III-V on Si for high-mobility CMOS N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ...
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
14 2012 STM study of the initial stages of C60 adsorption on the Pt (1 1 0)-(1× 2) surface T Orzali, M Petukhov, M Sambi, E Tondello
Applied surface science 252 (15), 5534-5537, 2006
13 2006 Technology options to reduce contact resistance in Nanoscale III-V MOSFETs RTP Lee, WY Loh, R Tieckelmann, T Orzali, C Huffman, A Vert, G Huang, ...
ECS Transactions 66 (4), 125, 2015
7 2015 Integration of InP and InGaAs on 300 mm Si wafers using chemical mechanical planarization A Vert, T Orzali, PR Satyavolu, G Whitener, B Petro
ECS Journal of Solid State Science and Technology 5 (9), P478, 2016
5 2016 Damage free Ar ion plasma surface treatment on In0.53 Ga0.47 As-on-silicon metal-oxide-semiconductor device D Koh, SH Shin, J Ahn, S Sonde, HM Kwon, T Orzali, DH Kim, TW Kim, ...
Applied Physics Letters 107 (18), 183509, 2015
5 2015 
Alexey VertПотвърден имейл адрес: sematech.org
