MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ...
IEEE Electron device letters 33 (4), 525-527, 2012
188 2012 Nanowire Channel InAlN/GaN HEMTs With High Linearity of and DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ...
IEEE electron device letters 34 (8), 969-971, 2013
134 2013 Gate-recessed integrated E/D GaN HEMT technology with fT /fmax >300 GHz ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ...
IEEE Electron Device Letters 34 (6), 741-743, 2013
118 2013 Passivation effects in Ni∕ AlGaN∕ GaN Schottky diodes by annealing H Kim, M Schuette, H Jung, J Song, J Lee, W Lu, JC Mabon
Applied physics letters 89 (5), 2006
69 2006 Impact of Passivation Thickness in Highly Scaled GaN HEMTs DS Lee, O Laboutin, Y Cao, W Johnson, E Beam, A Ketterson, M Schuette, ...
IEEE electron device letters 33 (7), 976-978, 2012
58 2012 InAlN Barrier Scaled Devices for Very High and for Low-Voltage RF Applications P Saunier, ML Schuette, TM Chou, HQ Tserng, A Ketterson, E Beam, ...
IEEE transactions on electron devices 60 (10), 3099-3104, 2013
52 2013 Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
49 2014 Improved sensitivity of AlGaN/GaN field effect transistor biosensors by optimized surface functionalization X Wen, ML Schuette, SK Gupta, TR Nicholson, SC Lee, W Lu
IEEE Sensors Journal 11 (8), 1726-1735, 2010
41 2010 317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance DS Lee, O Laboutin, Y Cao, W Johnson, E Beam, A Ketterson, M Schuette, ...
physica status solidi c 10 (5), 827-830, 2013
28 2013 Monolithically integrated E/D-mode InAlN HEMTs with ƒt /ƒmax > 200/220 GHz B Song, B Sensale-Rodriguez, R Wang, A Ketterson, M Schuette, E Beam, ...
70th Device Research Conference, 1-2, 2012
26 2012 Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors H Kim, ML Schuette, W Lu
Journal of Vacuum Science & Technology B 29 (3), 2011
20 2011 Self-aligned AlGaN/GaN high electron mobility transistors J Lee, D Liu, H Kim, M Schuette, JS Flynn, GR Brandes, W Lu
Electronics Letters 40 (19), 1227-1228, 2004
20 2004 Passivation of surface and interface states in AlGaN/GaN HEMT structures by annealing H Kim, ML Schuette, J Lee, W Lu, JC Mabon
Journal of electronic materials 36, 1149-1155, 2007
18 2007 Highly selective zero-bias plasma etching of GaN over AlGaN ML Schuette, W Lu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
17 2007 Ionic metal–oxide TFTs for integrated switching applications ML Schuette, AJ Green, K Leedy, A Crespo, SE Tetlak, KA Sutherlin, ...
IEEE Transactions on Electron Devices 63 (5), 1921-1927, 2016
16 2016 Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs B Sensale-Rodriguez, J Guo, R Wang, J Verma, G Li, T Fang, E Beam, ...
Solid-state electronics 80, 67-71, 2013
11 2013 Copper germanide Ohmic contact on n-type gallium nitride using silicon tetrachloride plasma ML Schuette, W Lu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
10 2005 X-band power performance of N-face GaN MIS-HEMTs MH Wong, DF Brown, ML Schuette, H Kim, V Balasubramanian, W Lu, ...
Electronics letters 47 (3), 214-215, 2011
9 2011 Electrical transport in the copper germanide-n‐GaN system: Experiment and numerical model ML Schuette, W Lu
Journal of applied physics 101 (11), 2007
9 2007 Compositional Study of Copper-Germanium Ohmic Contact to n- GaN ML Schuette, W Lu
Journal of electronic materials 36, 420-425, 2007
8 2007