Siddharth Rajan

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	14198	9507
h-индекс	66	50
i10-индекс	174	143

2200

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550

1650

20062007200820092010201120122013201420152016201720182019202020212022202397 87 146 151 218 213 263 496 605 690 818 818 1056 1508 1845 1942 2164 989

Публичен достъп

Преглед на всички

85 статии

26 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Sriram KrishnamoorthyUniversity of California, Santa BarbaraПотвърден имейл адрес: ucsb.edu
Umesh MishraUCSBПотвърден имейл адрес: ece.ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityПотвърден имейл адрес: osu.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceПотвърден имейл адрес: iisc.ac.in
Yuewei ZhangUCSBПотвърден имейл адрес: ucsb.edu
Jim SpeckProfessor of Materials, UCSBПотвърден имейл адрес: ucsb.edu
Fatih AkyolYıldız Teknik ÜniversitesiПотвърден имейл адрес: yildiz.edu.tr
Sanyam BajajIntel CorporationПотвърден имейл адрес: intel.com
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsПотвърден имейл адрес: osu.edu
Stacia KellerUniversity of California Santa BarbaraПотвърден имейл адрес: ece.ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
Steven RingelThe Ohio State UniversityПотвърден имейл адрес: osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityПотвърден имейл адрес: osu.edu
Chandan JoishiPost Doctoral Researcher, ECE, The Ohio State UniversityПотвърден имейл адрес: osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityПотвърден имейл адрес: osu.edu
Wu Lu, ProfessorThe Ohio State UniversityПотвърден имейл адрес: osu.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityПотвърден имейл адрес: asu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityПотвърден имейл адрес: osu.edu
Jared M JohnsonThe Ohio State UniversityПотвърден имейл адрес: thermofisher.com
Shahadat Hasan SohelIntelПотвърден имейл адрес: intel.com

Следене

Siddharth Rajan

Electrical and Computer Engineering, Ohio State University

Потвърден имейл адрес: ece.osu.edu - Начална страница

semiconductors semiconductor devices


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	909	2018
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018	567	2018
High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005	562	2005
p-type doping of MoS₂ thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 092104, 2014	321	2014
Demonstration of high mobility and quantum transport in modulation-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 173502, 2018	316	2018
Electrostatic carrier doping of GdTiO₃/SrTiO₃ interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 232116, 2011	298	2011
Modulation-doped β-(Al_0.2Ga_0.8)₂O₃/Ga₂O₃ field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 023502, 2017	271	2017
N-polar high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 044501, 2007	266	2007
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	260	2020
Large area single crystal (0001) oriented MoS₂ MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 252108, 2013	254	2013
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005	226	2005
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	223	2004
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013	215	2013
High responsivity in molecular beam epitaxy grown β-Ga₂O₃ metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 221107, 2017	211	2017
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018	188	2018
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 133503, 2011	188	2011
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 203502, 2010	183	2010
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013	178	2013
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 111118, 2012	162	2012
Delta-doped β-gallium oxide field-effect transistor S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan Applied Physics Express 10 (5), 051102, 2017	157	2017

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