| Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern N Han, T Viet Cuong, M Han, B Deul Ryu, S Chandramohan, J Bae Park, ... Nature communications 4 (1), 1452, 2013 | 243 | 2013 |
| Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning TV Cuong, HS Cheong, HG Kim, HY Kim, CH Hong, EK Suh, HK Cho, ... Applied Physics Letters 90 (13), 2007 | 124 | 2007 |
| Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency JH Kang, JH Ryu, HK Kim, HY Kim, N Han, YJ Park, P Uthirakumar, ... Optics express 19 (4), 3637-3646, 2011 | 49 | 2011 |
| Effect of periodic deflector embedded in InGaN∕ GaN light emitting diode HG Kim, MG Na, HK Kim, HY Kim, JH Ryu, TV Cuong, CH Hong Applied physics letters 90 (26), 2007 | 37 | 2007 |
| Impact of two-floor air prism arrays as an embedded reflector for enhancing the output power of InGaN/GaN light emitting diodes HG Kim, HK Kim, HY Kim, JH Ryu, JH Kang, N Han, P Uthirakumar, ... Applied Physics Letters 95 (22), 2009 | 26 | 2009 |
| High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors JH Ryu, HY Kim, HK Kim, YS Katharria, N Han, JH Kang, YJ Park, M Han, ... Optics Express 20 (9), 9999-10003, 2012 | 25 | 2012 |
| Improvement of light output power in InGaN/GaN light-emitting diodes with a nanotextured GaN surface using indium tin oxide nanospheres JH Kang, HG Kim, HK Kim, HY Kim, JH Ryu, P Uthirakumar, N Han, ... Japanese Journal of Applied Physics 48 (10R), 102104, 2009 | 21 | 2009 |
| Enhanced light output power of GaN-based light-emitting diodes by nano-rough indium tin oxide film using ZnO nanoparticles B Deul Ryu, P Uthirakumar, J Hye Kang, B Jun Kwon, S Chandramohan, ... Journal of Applied Physics 109 (9), 2011 | 18 | 2011 |
| Enhancement of light output power in InGaN/GaN LEDs with nanoroughed hemispherical indium tin oxide transparent ohmic contacts JH Kang, HG Kim, JH Ryu, HK Kim, HY Kim, J Joo, MS Lee, YJ Park, ... Electrochemical and Solid-State Letters 13 (2), D1, 2009 | 18 | 2009 |
| Enhancement of light output power in GaN-based light-emitting diodes using indium tin oxide films with nanoporous structures JH Kang, JH Ryu, HK Kim, HY Kim, N Han, MS Lee, YJ Park, ... Thin Solid Films 520 (1), 437-441, 2011 | 16 | 2011 |
| Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes HG Kim, HK Kim, HY Kim, H Jeong, S Chandramohan, P Uthirakumar, ... Optics letters 35 (18), 3012-3014, 2010 | 16 | 2010 |
| Improved GaN-based LED light extraction efficiencies via selective MOCVD using peripheral microhole arrays HG Kim, TV Cuong, MG Na, HK Kim, HY Kim, JH Ryu, CH Hong IEEE Photonics Technology Letters 20 (15), 1284-1286, 2008 | 16 | 2008 |
| Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes YJ Park, HY Kim, JH Ryu, HK Kim, JH Kang, N Han, M Han, H Jeong, ... Optics Express 19 (3), 2029-2036, 2011 | 15 | 2011 |
| Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers YJ Park, JH Kang, HY Kim, VV Lysak, S Chandramohan, JH Ryu, HK Kim, ... Optics Express 19 (23), 23429-23435, 2011 | 13 | 2011 |
| Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays JH Kang, HG Kim, S Chandramohan, HK Kim, HY Kim, JH Ryu, YJ Park, ... Optics Letters 37 (1), 88-90, 2012 | 11 | 2012 |
| Self-assembled periodic silica nanosphere arrays on wet-etched patterned sapphire substrate for a high-light-extraction-efficiency light-emitting diode N Han, HG Kim, HY Kim, JH Kang, BD Ryu, YJ Park, M Han, H Jeong, ... IEEE Electron Device Letters 32 (4), 527-529, 2011 | 10 | 2011 |
| Selective Defect Blocking by Self-Assembled Silica Nanospheres for High Quality GaN Template YJ Park, HG Kim, HY Kim, JH Ryu, HK Kim, JH Kang, N Han, M Han, ... Electrochemical and Solid-State Letters 13 (8), H287, 2010 | 10 | 2010 |
| Enhanced light output power of InGaN/GaN light emitting diodes with embedded air prisms HG Kim, HY Kim, HK Kim, JH Ryu, JH Kang, N Han, P Uthirakumar, ... Electrochemical and Solid-State Letters 13 (2), H42, 2009 | 10 | 2009 |
| InGaN/GaN light-emitting diode on concave-hexagonal-patterned sapphire substrate N Han, HG Kim, HY Kim, HK Kim, JH Kang, JH Ryu, YS Lee, EK Suh, ... Japanese Journal of Applied Physics 48 (11R), 110201, 2009 | 9 | 2009 |
| Enhanced light output power of GaN-based light emitting diodes with overcut sideholes formed by wet etching HK Kim, HG Kim, HY Kim, JH Ryu, J hye Kang, N Han, P Uthirakumar, ... Solid-state electronics 54 (5), 575-578, 2010 | 7 | 2010 |
