Следене
Devendra Sadana
Devendra Sadana
Потвърден имейл адрес: us.ibm.com
Заглавие
Позовавания
Позовавания
Година
Fin FET devices from bulk semiconductor and method for forming
DM Fried, EJ Nowak, BA Rainey, DK Sadana
US Patent 6,642,090, 2003
3732003
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
J Kim, C Bayram, H Park, CW Cheng, C Dimitrakopoulos, JA Ott, ...
Nature communications 5 (1), 1-7, 2014
3342014
SOI CMOS structure
W Chen, DK Sadana, Y Taur
US Patent 5,767,549, 1998
3241998
Spalling methods to form multi-junction photovoltaic structure
SW Bedell, DK Sadana, D Shahrjerdi
US Patent 8,927,318, 2015
3072015
Method of preventing surface roughening during hydrogen prebake of SiGe substrates
H Chen, DM Mocuta, RJ Murphy, SW Bedell, DK Sadana
US Patent 6,958,286, 2005
2942005
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ...
US Patent 8,778,448, 2014
2862014
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
B Hekmatshoar-Tabari, M Hopstaken, DG Park, DK Sadana, GG Shahidi, ...
US Patent 9,099,585, 2015
2852015
Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics
CW Cheng, KT Shiu, N Li, SJ Han, L Shi, DK Sadana
Nature communications 4 (1), 1-7, 2013
2782013
Heterojunction III-V photovoltaic cell fabrication
SW Bedell, NS Cortes, KE Fogel, D Sadana, G Shahidi, D Shahrjerdi
US Patent 8,802,477, 2014
2392014
Layer-resolved graphene transfer via engineered strain layers
J Kim, H Park, JB Hannon, SW Bedell, K Fogel, DK Sadana, ...
Science 342 (6160), 833-836, 2013
2232013
Efficient and bright organic light-emitting diodes on single-layer graphene electrodes
N Li, S Oida, GS Tulevski, SJ Han, JB Hannon, DK Sadana, TC Chen
Nature communications 4 (1), 1-7, 2013
2192013
Techniques for Layer Transfer Processing
S Bedell, K Fogel, B Furman, S Purushothaman, D Sadana, A Topol
US Patent App. 11/840,389, 2007
2122007
Kerf-less removal of Si, Ge, and III–V layers by controlled spalling to enable low-cost PV technologies
SW Bedell, D Shahrjerdi, B Hekmatshoar, K Fogel, PA Lauro, JA Ott, ...
IEEE Journal of Photovoltaics 2 (2), 141-147, 2012
1942012
Silicon-on-insulator vertical array device trench capacitor DRAM
CJ Radens, GB Bronner, TC Chen, B Davari, JA Mandelman, D Moy, ...
US Patent 6,566,177, 2003
1932003
Techniques for layer transfer processing
S Bedell, K Fogel, B Furman, S Purushothaman, D Sadana, A Topol
US Patent App. 10/685,636, 2005
1882005
Patterned SOI regions in semiconductor chips
B Davari, DK Sadana, GG Shahidi, S Tiwari
US Patent 6,333,532, 2001
1862001
Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
H Chen, D Mocuta, R Murphy, S Bedell, D Sadana
US Patent App. 10/751,207, 2005
1832005
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
K Cheng, A Khakifirooz, P Kulkarni, S Ponoth, J Kuss, D Shahrjerdi, ...
2009 IEEE international electron devices meeting (IEDM), 1-4, 2009
1702009
SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device
BB Doris, D Chidambarrao, X Baie, JA Mandelman, DK Sadana, ...
US Patent 6,717,216, 2004
1672004
Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing
AE Morgan, EK Broadbent, KN Ritz, DK Sadana, BJ Burrow
Journal of applied physics 64 (1), 344-353, 1988
1571988
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