Atresh Sanne
Atresh Sanne
Потвърден имейл адрес: utexas.edu
Large-area monolayer MoS2 for flexible low-power RF nanoelectronics in the GHz regime
HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ...
Adv. Mater 28 (9), 1818-1823, 2016
Radio Frequency Transistors and Circuits Based on CVD MoS2
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ...
Science advances 3 (10), e1701661, 2017
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ...
Applied Physics Letters 106 (6), 2015
Enabling real-time interference alignment: Promises and challenges
K Miller, A Sanne, K Srinivasan, S Vishwanath
Proceedings of the thirteenth ACM international symposium on Mobile Ad Hoc …, 2012
Embedded gate CVD MoS2 microwave FETs
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, L Mathew, R Rao, ...
npj 2D Materials and Applications 1 (1), 26, 2017
Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors
S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee
Journal of Applied Physics 119 (12), 2016
Intra-domain periodic defects in monolayer MoS2
A Roy, R Ghosh, A Rai, A Sanne, K Kim, HCP Movva, R Dey, T Pramanik, ...
Applied Physics Letters 110 (20), 2017
Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors
A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 2014
Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems
M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, R Ghosh, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor
M Kim, S Park, A Sanne, SK Banerjee, D Akinwande
2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018
Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, D Akinwande, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
A high-output power 1-V charge pump and power switch for configurable, in-field-programmable metal eFuse on Intel 4 logic technology
S Hutchins, A Sanne, Z Chen, MM Hasan, U Bhattacharya, E Karl, ...
IEEE Solid-State Circuits Letters 6, 9-12, 2022
State-of-the-art large area CVD MoS2 based RF electronics
MN Yogeesh, A Sanne, S Park, HY Chang, R Ghosh, SK Banerjee, ...
2016 3rd International Conference on Emerging Electronics (ICEE), 1-3, 2016
Radio frequency transistors and circuit applications based on CVD MoS2
A Sanne, MN Yogeesh, R Ghosh, A Rai, SH Shin, A Sharma, L Mathew, ...
2015 73rd Annual Device Research Conference (DRC), 215-216, 2015
E-mode RF transistors and circuit model using CVD MoS2
A Sanne, MN Yogeesh, S Park, R Ghosh, C Liu, L Mathew, R Rao, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
CVD MoS₂ for high speed devices and circuits
AM Sanne
CVD MoS2 for High Speed Devices and Circuits
AM Sanne
University of Texas, 2018
Large Area CVD MoS2 RF transistors with GHz performance
M Nagavalli Yogeesh, A Sanne, S Park, D Akinwade, S Banerjee
APS March Meeting Abstracts 2017, T1. 111, 2017
Low Power Monolayer MoS2 Transistors for RF Applications
R Rao, R Ghosh, A Sanne, L Mathew, S Banerjee, ...
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