|Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime|
HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ...
Advanced Materials 28 (9), 1818-1823, 2016
|Radio Frequency Transistors and Circuits Based on CVD MoS2|
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
|Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface|
JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ...
Science advances 3 (10), e1701661, 2017
|Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates|
A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ...
Applied Physics Letters 106 (6), 062101, 2015
|Enabling real-time interference alignment: Promises and challenges|
K Miller, A Sanne, K Srinivasan, S Vishwanath
Proceedings of the thirteenth ACM international symposium on Mobile Ad Hoc …, 2012
|Embedded gate CVD MOS2 microwave FETs|
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, L Mathew, R Rao, ...
npj 2D Materials and Applications 1 (1), 1-6, 2017
|Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors|
S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee
Journal of Applied Physics 119 (12), 124502, 2016
|Intra-domain periodic defects in monolayer MoS2|
A Roy, R Ghosh, A Rai, A Sanne, K Kim, HCP Movva, R Dey, T Pramanik, ...
Applied Physics Letters 110 (20), 201905, 2017
|Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors|
A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee
Applied Physics Letters 104 (8), 083106, 2014
|Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor|
M Kim, S Park, A Sanne, SK Banerjee, D Akinwande
2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018
|Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems|
M Yogeesh, HY Chang, W Li, S Rahimi, A Rai, A Sanne, R Ghosh, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
|Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets|
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, D Akinwande, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
|State-of-the-art large area CVD MoS2 based RF electronics|
MN Yogeesh, A Sanne, S Park, HY Chang, R Ghosh, SK Banerjee, ...
2016 3rd International Conference on Emerging Electronics (ICEE), 1-3, 2016
|Radio frequency transistors and circuit applications based on CVD MoS2|
A Sanne, MN Yogeesh, R Ghosh, A Rai, SH Shin, A Sharma, L Mathew, ...
2015 73rd Annual Device Research Conference (DRC), 215-216, 2015
|E-mode RF transistors and circuit model using CVD MoS2|
A Sanne, MN Yogeesh, S Park, R Ghosh, C Liu, L Mathew, R Rao, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
|A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology|
S Hutchins, J Li, A Sanne, Z Chen, MM Hasan, U Bhattacharya, E Karl, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
|CVD MoS₂ for high speed devices and circuits|
|CVD MoS2 for High Speed Devices and Circuits|
University of Texas, 2018
|Large Area CVD MoS2 RF transistors with GHz performance|
M Nagavalli Yogeesh, A Sanne, S Park, D Akinwade, S Banerjee
APS March Meeting Abstracts 2017, T1. 111, 2017
|Low Power Monolayer MoS2 Transistors for RF Applications|
R Rao, R Ghosh, A Sanne, L Mathew, S Banerjee
APPLIED NOVEL DEVICES INC AUSTIN TX, 2015