Hema C. P. Movva
Hema C. P. Movva
Потвърден имейл адрес: intel.com - Начална страница
van der Waals Heterostructures with High Accuracy Rotational Alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2014
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility
B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical Review Letters 116 (8), 086601, 2016
CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films
ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
Acs Nano 5 (9), 7198-7204, 2011
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee
Crystals 8 (8), 316, 2018
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
JH Park, A Sanne, Y Guo, M Amani, K Zhang, HCP Movva, JA Robinson, ...
Science Advances 3 (10), e1701661, 2017
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer
HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical Review Letters 118 (24), 247701, 2017
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ...
Applied Physics Letters 106 (6), 062101, 2015
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy
A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ...
Applied Physics Letters 102 (16), 2013
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in
S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...
Physical Review B 97 (20), 201407, 2018
Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency
ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ...
IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano Letters 16 (8), 4975-4981, 2016
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3
R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ...
Applied Physics Letters 104 (22), 2014
Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ...
Nano letters 19 (3), 1976-1981, 2019
In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces
JH Park, HCP Movva, E Chagarov, K Sardashti, H Chou, I Kwak, KT Hu, ...
Nano letters 15 (10), 6626-6633, 2015
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