Следене
Byron J Villis
Byron J Villis
Archer Materials
Потвърден имейл адрес: archerx.com.au
Заглавие
Позовавания
Позовавания
Година
Coherent creation and destruction of orbital wavepackets in Si: P with electrical and optical read-out
KL Litvinenko, ET Bowyer, PT Greenland, N Stavrias, J Li, R Gwilliam, ...
Nature communications 6 (1), 6549, 2015
502015
Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry
BJ Villis, AO Orlov, S Barraud, M Vinet, M Sanquer, P Fay, G Snider, ...
Applied Physics Letters 104 (23), 2014
282014
Defect detection in nano-scale transistors based on radio-frequency reflectometry
BJ Villis, AO Orlov, X Jehl, GL Snider, P Fay, M Sanquer
Applied Physics Letters 99 (15), 2011
252011
Effect of boron on interstitial-related luminescence centers in silicon
S Charnvanichborikarn, BJ Villis, BC Johnson, J Wong-Leung, ...
Applied Physics Letters 96 (5), 2010
222010
Self-assembled molecular nanowires for high-performance organic transistors
LR Fleet, J Stott, B Villis, S Din, M Serri, G Aeppli, S Heutz, A Nathan
ACS applied materials & interfaces 9 (24), 20686-20695, 2017
172017
Picosecond dynamics of a silicon donor based terahertz detector device
ET Bowyer, BJ Villis, J Li, KL Litvinenko, BN Murdin, M Erfani, G Matmon, ...
Applied Physics Letters 105 (2), 2014
142014
Quantitative analysis of electrically detected Ramsey fringes in P-doped Si
PT Greenland, G Matmon, BJ Villis, ET Bowyer, J Li, BN Murdin, ...
Physical Review B 92 (16), 165310, 2015
82015
Two-to three-dimensional crossover in a dense electron liquid in silicon
G Matmon, E Ginossar, BJ Villis, A Kölker, T Lim, H Solanki, SR Schofield, ...
Physical Review B 97 (15), 155306, 2018
72018
Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
BC Johnson, BJ Villis, JE Burgess, N Stavrias, JC McCallum, ...
Journal of Applied Physics 111 (9), 2012
62012
Quantum paraelectric varactors for radio-frequency measurements at mK temperatures
P Apostolidis, BJ Villis, JF Chittock-Wood, A Baumgartner, V Vesterinen, ...
arXiv preprint arXiv:2007.03588, 2020
42020
aFG van der Meer, C. Pidgeon, G. Aeppli, and B. Murdin
K Litvinenko, E Bowyer, P Greenland, N Stavrias, J Li, R Gwilliam, B Villis, ...
Nature Communications 6, 6549, 2015
42015
Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon
JC McCallum, BJ Villis, BC Johnson, N Stavrias, JE Burgess, ...
physica status solidi (a) 208 (3), 620-623, 2011
32011
Studies of the electrical and optical properties of defects in ion implanted silicon
BJ Villis
University of Melbourne, School of Physics, 2010
22010
Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy
BJ Villis, JC McCallum
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007
22007
Nano-orbitronics in silicon
BN Murdin, K Litvinenko, J Li, E Bowyer, M Pang, PT Greenland, B Villis, ...
Ultrafast Magnetism I: Proceedings of the International Conference UMC 2013 …, 2015
12015
Comparison between implanted boron and phosphorus in silicon wafers.
JE Burgess, BC Johnson, BJ Villis, JC McCallum, S Charnvanichborikarn, ...
2010 Conference on Optoelectronic and Microelectronic Materials and Devices …, 2010
12010
Low-temperature radio-frequency tuning circuit
M Buitelaar, P Apostolidis, B Villis, P Zubko
US Patent App. 17/597,541, 2022
2022
A universal parametric representation for weak-localization magnetoconductance in 2D and 3D systems
G Matmon, E Ginossar, B Villis, A KöLker, T Lim, N Curson, J Li, B Murdin, ...
APS March Meeting Abstracts 2017, L28. 010, 2017
2017
Fabrication of Si: P delta-doped layers with varying doping densities
T Lim, B Villis, S Patil, S Schofield, N Curson, G Aeppli, C Team
APS March Meeting Abstracts 2014, S44. 011, 2014
2014
Dislocation related band-edge photoluminescence in boron-implanted silicon
BJ Villis, PG Spizzirri, BC Johnson, JC McCallum
2008 International Conference on Nanoscience and Nanotechnology, 214-217, 2008
2008
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