| Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBE DV Nechaev, PA Aseev, VN Jmerik, PN Brunkov, YV Kuznetsova, ... Journal of crystal growth 378, 319-322, 2013 | 67 | 2013 |
| Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring VN Jmerik, AM Mizerov, DV Nechaev, PA Aseev, AA Sitnikova, ... Journal of crystal growth 354 (1), 188-192, 2012 | 60 | 2012 |
| Plasma-assisted molecular beam epitaxy of Al (Ga) N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3 SV Ivanov, DV Nechaev, AA Sitnikova, VV Ratnikov, MA Yagovkina, ... Semiconductor Science and Technology 29 (8), 084008, 2014 | 53 | 2014 |
| E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW SV Ivanov, VN Jmerik, DV Nechaev, VI Kozlovsky, MD Tiberi physica status solidi (a) 212 (5), 1011-1016, 2015 | 35 | 2015 |
| High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on c-Al2O3 VN Jmerik, DV Nechaev, AA Toropov, EA Evropeitsev, VI Kozlovsky, ... Applied Physics Express 11 (9), 091003, 2018 | 34 | 2018 |
| Strongly confined excitons in GaN/AlN nanostructures with atomically thin GaN layers for efficient light emission in deep-ultraviolet AA Toropov, EA Evropeitsev, MO Nestoklon, DS Smirnov, TV Shubina, ... Nano Letters 20 (1), 158-165, 2019 | 25 | 2019 |
| Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE DV Nechaev, OA Koshelev, VV Ratnikov, PN Brunkov, AV Myasoedov, ... Superlattices and Microstructures 138, 106368, 2020 | 20 | 2020 |
| Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux-and temperature-modulated techniques VN Jmerik, DV Nechaev, S Rouvimov, VV Ratnikov, PS Kop'ev, ... Journal of Materials Research 30 (19), 2871-2880, 2015 | 19 | 2015 |
| Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra V Davydov, E Roginskii, Y Kitaev, A Smirnov, I Eliseyev, D Nechaev, ... Nanomaterials 11 (2), 286, 2021 | 17 | 2021 |
| Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1− xN layers with medium Al content (x= 0.4–0.6) DV Nechaev, PN Brunkov, SI Troshkov, VN Jmerik, SV Ivanov Journal of Crystal Growth 425, 9-12, 2015 | 17 | 2015 |
| Kinetics of metal-rich PA molecular beam epitaxy of AlGaN heterostructures for mid-UV photonics VN Jmerik, DV Nechaev, SV Ivanov Molecular Beam Epitaxy, 135-179, 2018 | 16 | 2018 |
| Suppression of the quantum-confined Stark effect in AlxGa1− xN/AlyGa1− yN corrugated quantum wells AA Toropov, EA Shevchenko, TV Shubina, VN Jmerik, DV Nechaev, ... Journal of Applied Physics 114 (12), 2013 | 14 | 2013 |
| Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy DE Sviridov, VN Jmerik, S Rouvimov, DV Nechaev, VI Kozlovsky, ... Applied Physics Letters 114 (6), 2019 | 10 | 2019 |
| Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy DS Zolotukhin, DV Nechaev, SV Ivanov, VN Zhmerik Technical Physics Letters 43, 262-266, 2017 | 10 | 2017 |
| Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates EV Lutsenko, NV Rzheutskii, VN Pavlovskii, GP Yablonskii, DV Nechaev, ... Physics of the Solid State 55, 2173-2181, 2013 | 10 | 2013 |
| Monolayer-scale gan/aln multiple quantum wells for high power e-beam pumped uv-emitters in the 240–270 nm spectral range V Jmerik, D Nechaev, K Orekhova, N Prasolov, V Kozlovsky, D Sviridov, ... Nanomaterials 11 (10), 2553, 2021 | 9 | 2021 |
| Stress control in thick AlN/c-Al2O3 templates grown by plasma-assisted molecular beam epitaxy OA Koshelev, DV Nechaev, PN Brunkov, SV Ivanov, VN Jmerik Semiconductor Science and Technology 36 (3), 035007, 2021 | 9 | 2021 |
| Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter NV Kuznetsova, DV Nechaev, NM Shmidt, SY Karpov, NV Rzheutskii, ... Technical Physics Letters 42, 635-638, 2016 | 8 | 2016 |
| Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates VN Jmerik, NV Kuznetsova, DV Nechaev, TV Shubina, DA Kirilenko, ... Journal of Crystal Growth 477, 207-211, 2017 | 7 | 2017 |
| III‐nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy TV Shubina, VN Jmerik, VY Davydov, DR Kazanov, AN Smirnov, ... physica status solidi (b) 253 (5), 845-852, 2016 | 7 | 2016 |
