Dmitry Veksler
Dmitry Veksler
The Aerospace Corporation
Няма потвърден имейл адрес
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ...
Applied Physics Letters 93 (13), 131905, 2008
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 124518, 2011
Detection of terahertz radiation in gated two-dimensional structures governed by dc current
D Veksler, F Teppe, AP Dmitriev, VY Kachorovskii, W Knap, MS Shur
Physical Review B 73 (12), 125328, 2006
Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
F Teppe, W Knap, D Veksler, MS Shur, AP Dmitriev, VY Kachorovskii, ...
Applied Physics Letters 87 (5), 052107, 2005
Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
AV Muravjov, DB Veksler, VV Popov, OV Polischuk, N Pala, X Hu, ...
Applied Physics Letters 96 (4), 042105, 2010
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
Terahertz detection by GaN/AlGaN transistors
A El Fatimy, SB Tombet, F Teppe, W Knap, DB Veksler, S Rumyantsev, ...
Electronics Letters 42 (23), 1342-1344, 2006
Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
F Teppe, D Veksler, VY Kachorovski, AP Dmitriev, X Xie, XC Zhang, ...
Applied Physics Letters 87 (2), 022102, 2005
Spectroscopic characterization of explosives in the far-infrared region
Y Chen, H Liu, Y Deng, DB Veksler, MS Shur, XC Zhang, D Schauki, ...
Terahertz for Military and Security Applications II 5411, 1-8, 2004
Universal compact model for long-and short-channel thin-film transistors
B Iñiguez, R Picos, D Veksler, A Koudymov, MS Shur, T Ytterdal, ...
Solid-State Electronics 52 (3), 400-405, 2008
Random telegraph noise (RTN) in scaled RRAM devices
D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ...
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013
Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs
W Stillman, MS Shur, D Veksler, S Rumyantsev, F Guarin
Electronics letters 43 (7), 422-423, 2007
Controlling uniformity of RRAM characteristics through the forming process
A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012
Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series
TA Elkhatib, VY Kachorovskii, WJ Stillman, DB Veksler, KN Salama, ...
IEEE transactions on microwave theory and techniques 58 (2), 331-339, 2010
Leakage Current-Forming Voltage Relation and Oxygen Gettering in HfOxRRAM Devices
KG Young-Fisher, G Bersuker, B Butcher, A Padovani, L Larcher, ...
IEEE electron device letters 34 (6), 750-752, 2013
Positive bias instability and recovery in InGaAs channel nMOSFETs
S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
D Veksler, G Bersuker, B Chakrabarti, E Vogel, S Deora, K Matthews, ...
2012 International Electron Devices Meeting, 9.6. 1-9.6. 4, 2012
Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs
N Pala, F Teppe, D Veksler, Y Deng, MS Shur, R Gaska
Electronics Letters 41 (7), 447-449, 2005
Sub-100 nm InGaAs Quantum-Well (QW) MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 16.3. 1-16.3. 4, 2013
Silicon FinFETs as detectors of terahertz and sub-terahertz radiation
W Stillman, C Donais, S Rumyantsev, M Shur, D Veksler, C Hobbs, ...
International Journal of High Speed Electronics and Systems 20 (01), 27-42, 2011
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