| Graded-index separate confinement heterostructure InGaN laser diodes S Stańczyk, T Czyszanowski, A Kafar, J Goss, S Grzanka, E Grzanka, ... Applied Physics Letters 103 (26), 2013 | 45 | 2013 |
| Emission wavelength dependence of characteristic temperature of InGaN laser diodes A Bojarska, J Goss, Ł Marona, A Kafar, S Stańczyk, I Makarowa, S Najda, ... Applied Physics Letters 103 (7), 2013 | 13 | 2013 |
| Influence of the growth method on degradation of InGaN laser diodes A Bojarska, G Muzioł, C Skierbiszewski, E Grzanka, P Wiśniewski, ... Applied Physics Express 10 (9), 091001, 2017 | 12 | 2017 |
| Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes A Bojarska, J Goss, S Stanczyk, I Makarowa, D Schiavon, R Czernecki, ... Superlattices and Microstructures 116, 114-121, 2018 | 9 | 2018 |
| Negative-T InGaN laser diodes and their degradation A Bojarska, Ł Marona, I Makarowa, R Czernecki, M Leszczynski, T Suski, ... Applied Physics Letters 106 (17), 2015 | 8 | 2015 |
| Long-term degradation of InGaN-based laser diodes: Role of defects D Monti, M Meneghini, C De Santi, G Meneghesso, E Zanoni, A Bojarska, ... Microelectronics Reliability 76, 584-587, 2017 | 6 | 2017 |
| Development of the nitride laser diode arrays for video and movie projectors P Perlin, S Stańczyk, S Najda, T Suski, P Wiśniewski, I Makarowa, ... MRS Advances 1 (2), 103-108, 2016 | 6 | 2016 |
| Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes D Monti, M Meneghini, C De Santi, A Bojarska, P Perlin, G Meneghesso, ... Microelectronics Reliability 88, 864-867, 2018 | 5 | 2018 |
| Cavity-free lasing and 2D plasma oscillations in optically excited InGaN heterostructures A Bojarska, L Marona, R Czernecki, A Khachapuridze, T Suski, P Perlin, ... Journal of Russian Laser Research 35, 447-456, 2014 | 4 | 2014 |
| Nitride-based laser diodes and superluminescent diodes P Perlin, S Stańczyk, A Kafar, A Bojarska, Ł Marona, R Czernecki, ... Photonics Letters of Poland 6 (1), 32-34, 2014 | 4 | 2014 |
| Homoepitaxial ZnO/ZnMgO laser structures and their properties H Teisseyre, D Jarosz, L Marona, A Bojarska, V Ivanov, P Perlin, ... physica status solidi (a) 218 (1), 2000344, 2021 | 2 | 2021 |
| Towards 2D fully integrated array of InGaN laser diodes (Conference Presentation) P Perlin, A Kafar, K Saba, K Gibasiewicz, A Bojarska, D Schiavon Gallium Nitride Materials and Devices XV 11280, 112800R, 2020 | | 2020 |
| Freezing of quantum confinement Stark effect at low temperatures?(Conference Presentation) L Marona, A Bojarska, G Staszczak Gallium Nitride Materials and Devices XII 10104, 50-50, 2017 | | 2017 |
| Defect-related degradation in InGaN laser diodes D Monti, M Meneghini, C DE SANTI, G Meneghesso, E Zanoni, ... Proceedings of the 19th Convegno Italiano delle Tecnologie Fotoniche …, 2017 | | 2017 |
| Defect generation during constant current stress of InGaN laser diodes D Monti, M Meneghini, C DE SANTI, G Meneghesso, E Zanoni, ... Proceedings of the Compound Semiconductor Week 2017, 2017 | | 2017 |
