Следене
Martin F Schubert
Martin F Schubert
Потвърден имейл адрес: google.com
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Позовавания
Позовавания
Година
Origin of efficiency droop in GaN-based light-emitting diodes
MH Kim, MF Schubert, Q Dai, JK Kim, EF Schubert, J Piprek, Y Park
Applied Physics Letters 91 (18), 2007
16242007
Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection
JQ Xi, MF Schubert, JK Kim, EF Schubert, M Chen, SY Lin, W Liu, ...
Nature Photonics 1 (3), 176-179, 2007
13802007
Polarization-matched GaInN∕ AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
MF Schubert, J Xu, JK Kim, EF Schubert, MH Kim, S Yoon, SM Lee, ...
Applied physics letters 93 (4), 2008
6022008
Effect of dislocation density on efficiency droop in GaInN∕ GaN light-emitting diodes
MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ...
Applied Physics Letters 91 (23), 2007
5002007
Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics
S Chhajed, MF Schubert, JK Kim, EF Schubert
Applied Physics Letters 93 (25), 2008
3772008
Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ...
Applied Physics Letters 94 (11), 2009
3542009
Light‐extraction enhancement of GaInN light‐emitting diodes by graded‐refractive‐index Indium Tin Oxide anti‐reflection contact
JK Kim, S Chhajed, MF Schubert, EF Schubert, AJ Fischer, MH Crawford, ...
Advanced Materials 20 (4), 801-804, 2008
3382008
Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm
MF Schubert, FW Mont, S Chhajed, DJ Poxson, JK Kim, EF Schubert
Optics Express 16 (8), 5290-5298, 2008
2292008
Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
J Xu, MF Schubert, AN Noemaun, D Zhu, JK Kim, EF Schubert, MH Kim, ...
Applied Physics Letters 94 (1), 2009
2042009
High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes
FW Mont, JK Kim, MF Schubert, EF Schubert, RW Siegel
Journal of Applied Physics 103 (8), 083120-083120-6, 2008
1962008
Distributed Bragg reflector consisting of high-and low-refractive-index thin film layers made of the same material
MF Schubert, JQ Xi, JK Kim, EF Schubert
Applied Physics Letters 90 (14), 141115-141115-3, 2007
1702007
Enhanced electron capture and symmetrized carrier distribution in GalnN light-emitting diodes having tailored barrier doping
ZHU DI, AN NOEMAUN, MF SCHUBERT, J CHO, EF SCHUBERT, ...
Applied physics letters 96 (12), 2010
1682010
Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition
DJ Poxson, FW Mont, MF Schubert, JK Kim, EF Schubert
Applied Physics Letters 93 (10), 2008
1282008
Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions
R Mirhosseini, MF Schubert, S Chhajed, J Cho, JK Kim, EF Schubert
Optics Express 17 (13), 10806-10813, 2009
1112009
Refractive-index-matched indium–tin-oxide electrodes for liquid crystal displays
X Yan, FW Mont, DJ Poxson, MF Schubert, JK Kim, J Cho, EF Schubert
Japanese Journal of Applied Physics 48 (12R), 120203, 2009
1052009
Smart platooning of vehicles
MF Schubert, JUL Jessen
US Patent 9,940,840, 2018
972018
Broadband omnidirectional antireflection coatings optimized by genetic algorithm
DJ Poxson, MF Schubert, FW Mont, EF Schubert, JK Kim
Optics Letters 34 (6), 728-730, 2009
962009
On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
MF Schubert, J Xu, Q Dai, FW Mont, JK Kim, EF Schubert
Applied Physics Letters 94 (8), 2009
852009
Polarization of light emission by 460nm GaInN∕ GaN light-emitting diodes grown on (0001) oriented sapphire substrates
MF Schubert, S Chhajed, JK Kim, E Fred Schubert, J Cho
Applied Physics Letters 91 (5), 2007
832007
Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges
MF Schubert
Physical Review B 81 (3), 035303, 2010
632010
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