Assessment of high-frequency performance potential of carbon nanotube transistors J Guo, S Hasan, A Javey, G Bosman, M Lundstrom IEEE transactions on Nanotechnology 4 (6), 715-721, 2005 | 227 | 2005 |
Nonequilibrium green's function treatment of phonon scattering in carbon-nanotube transistors SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov IEEE Transactions on Electron Devices 54 (9), 2339-2351, 2007 | 207 | 2007 |
Energy efficiency comparison of nanowire heterojunction TFET and Si MOSFET at Lg=13nm, including P-TFET and variation considerations UE Avci, DH Morris, S Hasan, R Kotlyar, R Kim, R Rios, DE Nikonov, ... 2013 IEEE International Electron Devices Meeting, 33.4. 1-33.4. 4, 2013 | 91 | 2013 |
High-frequency performance projections for ballistic carbon-nanotube transistors S Hasan, S Salahuddin, M Vaidyanathan, MA Alam IEEE Transactions on Nanotechnology 5 (1), 14-22, 2006 | 91 | 2006 |
Understanding the feasibility of scaled III–V TFET for logic by bridging atomistic simulations and experimental results UE Avci, S Hasan, DE Nikonov, R Rios, K Kuhn, IA Young 2012 Symposium on VLSI Technology (VLSIT), 183-184, 2012 | 73 | 2012 |
Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias SO Koswatta, S Hasan, MS Lundstrom, MP Anantram, DE Nikonov Applied Physics Letters 89 (2), 2006 | 68 | 2006 |
Device design and manufacturing issues for 10 nm-scale MOSFETs: a computational study S Hasan, J Wang, M Lundstrom Solid-State Electronics 48 (6), 867-875, 2004 | 68 | 2004 |
Simulation of carbon nanotube FETs including hot-phonon and self-heating effects S Hasan, MA Alam, MS Lundstrom IEEE Transactions on Electron Devices 54 (9), 2352-2361, 2007 | 56 | 2007 |
Effects of surface orientation on the performance of idealized III–V thin-body ballistic n-MOSFETs R Kim, T Rakshit, R Kotlyar, S Hasan, CE Weber IEEE electron device letters 32 (6), 746-748, 2011 | 54 | 2011 |
Study of TFET non-ideality effects for determination of geometry and defect density requirements for sub-60mV/dec Ge TFET UE Avci, B Chu-Kung, A Agrawal, G Dewey, V Le, R Rios, DH Morris, ... 2015 IEEE International Electron Devices Meeting (IEDM), 34.5. 1-34.5. 4, 2015 | 51 | 2015 |
Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs R Ravishankar, G Kathawala, U Ravaioli, S Hasan, M Lundstrom Journal of Computational Electronics 4, 39-43, 2005 | 26 | 2005 |
Monte Carlo simulation of carbon nanotube devices S Hasan, J Guo, M Vaidyanathan, MA Alam, M Lundstrom Journal of computational electronics 3, 333-336, 2004 | 15 | 2004 |
Fettoy 2.0-on line tool, 14 February 2006 A Rahman, J Wang, J Guo, S Hasan, Y Liu, A Matsudaira, SS Ahmed, ... | 13 | |
Electron phonon interaction in carbon nanotube devices S Hasan Purdue University, 2006 | 11 | 2006 |
The role of self-heating and hot-phonons in metallic single walled carbon nanotubes S Hasan, A Alam, M Lundstrom arXiv preprint cond-mat/0602366, 2006 | 2 | 2006 |
Phonon scattering in Carbon Nanotube Field Effect Transistors--an NEGF Treatment. S Koswatta, S Hasan, M Lundstrom, MP Anantram, D Nikonov APS March Meeting Abstracts, U18. 005, 2006 | | 2006 |
Identification of Key Challenges in Design and Fabrication of 10nm Scale MOSFETs Using a Two Dimensional Quantum Simulator S Hasan, M Lundstrom | | |