| Direct bandgap germanium-on-silicon inferred from 5.7%〈 100〉 uniaxial tensile strain DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat Photonics Research 2 (3), A8-A13, 2014 | 170 | 2014 |
| Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature communications 8 (1), 1-7, 2017 | 149 | 2017 |
| Strained germanium thin film membrane on silicon substrate for optoelectronics D Nam, D Sukhdeo, A Roy, K Balram, SL Cheng, KCY Huang, Z Yuan, ... Optics express 19 (27), 25866-25872, 2011 | 148 | 2011 |
| Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ... Nano letters 13 (7), 3118-3123, 2013 | 133 | 2013 |
| Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping B Dutt, DS Sukhdeo, D Nam, BM Vulovic, Z Yuan, KC Saraswat IEEE Photonics Journal 4 (5), 2002-2009, 2012 | 132 | 2012 |
| Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser D Nam, D Sukhdeo, SL Cheng, A Roy, K Chih-Yao Huang, M Brongersma, ... Applied physics letters 100 (13), 131112, 2012 | 110 | 2012 |
| Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities J Petykiewicz, D Nam, DS Sukhdeo, S Gupta, S Buckley, AY Piggott, ... Nano letters 16 (4), 2168-2173, 2016 | 95 | 2016 |
| Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser B Dutt, H Lin, DS Sukhdeo, BM Vulovic, S Gupta, D Nam, KC Saraswat, ... IEEE Journal of Selected Topics in Quantum Electronics 19 (5), 1502706-1502706, 2013 | 93 | 2013 |
| Monolithic infrared silicon photonics: the rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 110502, 2021 | 66 | 2021 |
| Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser D Nam, DS Sukhdeo, S Gupta, JH Kang, ML Brongersma, KC Saraswat IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 16-22, 2013 | 59 | 2013 |
| Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application WS Jung, JH Park, A Nainani, D Nam, KC Saraswat Applied Physics Letters 101 (7), 072104, 2012 | 54 | 2012 |
| Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence D Nam, JH Kang, ML Brongersma, KC Saraswat Optics letters 39 (21), 6205-6208, 2014 | 42 | 2014 |
| Resonant nanostructures for highly confined and ultra-sensitive surface phonon-polaritons AM Dubrovkin, B Qiang, T Salim, D Nam, NI Zheludev, QJ Wang Nature communications 11 (1), 1-7, 2020 | 39 | 2020 |
| Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics DS Sukhdeo, D Nam, JH Kang, ML Brongersma, KC Saraswat Optics Express 23 (13), 16740-16749, 2015 | 31 | 2015 |
| Monolithic integration of germanium-on-insulator pin photodetector on silicon JH Nam, F Afshinmanesh, D Nam, WS Jung, TI Kamins, ML Brongersma, ... Optics Express 23 (12), 15816-15823, 2015 | 29 | 2015 |
| Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium S Gupta, D Nam, J Vuckovic, K Saraswat Physical Review B 97 (15), 155127, 2018 | 27 | 2018 |
| Strained germanium nanowire optoelectronic devices for photonic-integrated circuits Z Qi, H Sun, M Luo, Y Jung, D Nam Journal of Physics: Condensed Matter 30 (33), 334004, 2018 | 26 | 2018 |
| Impact of minority carrier lifetime on the performance of strained germanium light sources DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam Optics Communications 364, 233-237, 2016 | 26 | 2016 |
| 1D photonic crystal direct bandgap GeSn-on-insulator laser HJ Joo, Y Kim, D Burt, Y Jung, L Zhang, M Chen, SJ Parluhutan, DH Kang, ... Applied Physics Letters 119 (20), 201101, 2021 | 24 | 2021 |
| Theoretical modeling for the interaction of tin alloying with n-type doping and tensile strain for GeSn lasers D Sukhdeo, Y Kim, S Gupta, K Saraswat, B Dutt, D Nam IEEE Electron Device Letters 37 (10), 1307-1310, 2016 | 23 | 2016 |
Krishna SaraswatProfessor of Electrical Engineering, Stanford UniversityПотвърден имейл адрес: stanford.edu
