| Radiation effects in flash memories S Gerardin, M Bagatin, A Paccagnella, K Grürmann, F Gliem, TR Oldham, ... IEEE Transactions on Nuclear Science 60 (3), 1953-1969, 2013 | 163 | 2013 |
| A new hardware/software platform and a new 1/E neutron source for soft error studies: Testing FPGAs at the ISIS facility M Violante, L Sterpone, A Manuzzato, S Gerardin, P Rech, M Bagatin, ... IEEE Transactions on Nuclear Science 54 (4), 1184-1189, 2007 | 107 | 2007 |
| TID sensitivity of NAND flash memory building blocks M Bagatin, G Cellere, S Gerardin, A Paccagnella, A Visconti, S Beltrami IEEE Transactions on Nuclear Science 56 (4), 1909-1913, 2009 | 76 | 2009 |
| Key contributions to the cross section of NAND flash memories irradiated with heavy ions M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ... IEEE Transactions on Nuclear Science 55 (6), 3302-3308, 2008 | 61 | 2008 |
| Impact of NBTI aging on the single-event upset of SRAM cells M Bagatin, S Gerardin, A Paccagnella, F Faccio IEEE Transactions on Nuclear Science 57 (6), 3245-3250, 2010 | 51 | 2010 |
| Error instability in floating gate flash memories exposed to TID M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, M Bonanomi, ... IEEE Transactions on Nuclear Science 56 (6), 3267-3273, 2009 | 51 | 2009 |
| Catastrophic failure in highly scaled commercial NAND flash memories F Irom, DN Nguyen, M Bagatin, G Cellere, S Gerardin, A Paccagnella IEEE Transactions on Nuclear Science 57 (1), 266-271, 2010 | 50 | 2010 |
| Impact of technology scaling on the heavy-ion upset cross section of multi-level floating gate cells M Bagatin, S Gerardin, A Paccagnella, A Visconti IEEE Transactions on Nuclear Science 58 (3), 969-974, 2011 | 42 | 2011 |
| Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs S Gerardin, M Bagatin, D Cornale, L Ding, S Mattiazzo, A Paccagnella, ... IEEE Transactions on Nuclear Science 62 (6), 2398-2403, 2015 | 40 | 2015 |
| Increase in the heavy-ion upset cross section of floating gate cells previously exposed to TID M Bagatin, S Gerardin, A Paccagnella, G Cellere, A Visconti, M Bonanomi IEEE Transactions on Nuclear Science 57 (6), 3407-3413, 2010 | 40 | 2010 |
| Possible effects on avionics induced by terrestrial gamma-ray flashes M Tavani, A Argan, A Paccagnella, A Pesoli, F Palma, S Gerardin, ... Natural Hazards and Earth System Sciences 13 (4), 1127-1133, 2013 | 39 | 2013 |
| Heavy-ion induced threshold voltage tails in floating gate arrays S Gerardin, M Bagatin, A Paccagnella, G Cellere, A Visconti, M Bonanomi, ... IEEE Transactions on Nuclear Science 57 (6), 3199-3205, 2010 | 39 | 2010 |
| Annealing of heavy-ion induced floating gate errors: LET and feature size dependence M Bagatin, S Gerardin, G Cellere, A Paccagnella, A Visconti, S Beltrami, ... IEEE Transactions on Nuclear Science 57 (4), 1835-1841, 2010 | 35 | 2010 |
| Single and multiple cell upsets in 25-nm NAND flash memories M Bagatin, S Gerardin, A Paccagnella, V Ferlet-Cavrois IEEE Transactions on Nuclear Science 60 (4), 2675-2681, 2013 | 33 | 2013 |
| Temperature dependence of neutron-induced soft errors in SRAMs M Bagatin, S Gerardin, A Paccagnella, C Andreani, G Gorini, CD Frost Microelectronics Reliability 52 (1), 289-293, 2012 | 31 | 2012 |
| Effects of high energy x ray and proton irradiation on lead zirconate titanate thin films' dielectric and piezoelectric response Y Bastani, AY Cortes-Pena, AD Wilson, S Gerardin, M Bagatin, ... Applied Physics Letters 102 (19), 2013 | 29 | 2013 |
| CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments N Demaria, G Dellacasa, G Mazza, A Rivetti, MDDR Rolo, E Monteil, ... 2015 6th International Workshop on Advances in Sensors and Interfaces (IWASI …, 2015 | 28 | 2015 |
| Drain current collapse in 65 nm pMOS transistors after exposure to Grad dose L Ding, S Gerardin, M Bagatin, S Mattiazzo, D Bisello, A Paccagnella IEEE Transactions on Nuclear Science 62 (6), 2899-2905, 2015 | 27 | 2015 |
| Sample-to-sample variability and bit errors induced by total dose in advanced NAND flash memories M Bagatin, S Gerardin, F Ferrarese, A Paccagnella, V Ferlet-Cavrois, ... IEEE Transactions on Nuclear Science 61 (6), 2889-2895, 2014 | 27 | 2014 |
| Neutron-induced upsets in NAND floating gate memories S Gerardin, M Bagatin, A Ferrario, A Paccagnella, A Visconti, S Beltrami, ... IEEE Transactions on Device and Materials Reliability 12 (2), 437-444, 2012 | 27 | 2012 |
