| Ultrafast synaptic events in a chalcogenide memristor Y Li, Y Zhong, L Xu, J Zhang, X Xu, H Sun, X Miao Scientific reports 3, 1619, 2013 | 416 | 2013 |
| Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems XM Y Li, Y Zhong, J Zhang, L Xu, Q Wang, H Sun, H Tong, X M Cheng Scientific Reports 4, 4906, 2014 | 320 | 2014 |
| Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase‐Change Materials M Xu, X Mai, J Lin, W Zhang, Y Li, Y He, H Tong, X Hou, P Zhou, X Miao Advanced Functional Materials, 2003419, 2020 | 173 | 2020 |
| Memristive Model for Synaptic Circuits EGF Yang Zhang, Xiaoping Wang*, Yi Li IEEE Transactions on Circuits and Systems II: Express Briefs, DOI 10.1109 …, 2016 | 158* | 2016 |
| Functionally complete Boolean logic in 1T1R resistive random access memory ZR Wang, YT Su, Y Li, YX Zhou, TJ Chu, KC Chang, TC Chang, TM Tsai, ... IEEE Electron Device Letters 38 (2), 179-182, 2017 | 108 | 2017 |
| Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ... Nanoscale 11 (1), 237-245, 2019 | 103 | 2019 |
| Synaptic Characteristics of Ag/AgInSbTe/Ta-Based Memristor for Pattern Recognition Applications EGF Yang Zhang, Yi Li, Xiaoping Wang IEEE Transactions on Electron Devices 64 (4), 1806-1811, 2017 | 101 | 2017 |
| AgInSbTe memristor with gradual resistance tuning JJ Zhang, HJ Sun, Y Li, Q Wang, XH Xu, XS Miao Applied Physics Letters 102 (18), 183513, 2013 | 97 | 2013 |
| Associative Learning with Temporal Contiguity in a Memristive Circuit for Large‐Scale Neuromorphic Networks LOCXSM Yi Li, Lei Xu, Ying-Peng Zhong, Ya-Xiong Zhou, Shu-Jing Zhong, Yang ... Advanced Electronic Materials 1, 201500125, 2015 | 89* | 2015 |
| Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor XD Huang, Y Li, HY Li, KH Xue, X Wang, XS Miao IEEE Electron Device Letters 41 (4), 549-552, 2020 | 84 | 2020 |
| Graphene–ferroelectric transistors as complementary synapses for supervised learning in spiking neural network Y Chen, Y Zhou, F Zhuge, B Tian, M Yan, Y Li, Y He, XS Miao npj 2D Materials and Applications 3 (1), 1-9, 2019 | 77 | 2019 |
| Nanochannel-based transport in an interfacial memristor can emulate analog weight modulation of synapses XM Pan Zhang, Min Xia, Fuwei Zhuge, Yue Zhou, Zhenyu Wang, Boyi Dong, Yaoyao ... Nano Letters 19 (7), 4279-4286, 2019 | 77 | 2019 |
| An electro-photo-sensitive synaptic transistor for edge neuromorphic visual systems N Duan, Y Li, HC Chiang, J Chen, WQ Pan, YX Zhou, YC Chien, YH He, ... Nanoscale 11 (38), 17590-17599, 2019 | 75 | 2019 |
| Functional Demonstration of a Memristive Arithmetic Logic Unit (MemALU) for In‐Memory Computing L Cheng, Y Li, KS Yin, SY Hu, YT Su, MM Jin, ZR Wang, TC Chang, ... Advanced Functional Materials 29 (49), 1905660, 2019 | 65 | 2019 |
| Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing YF Lu, Y Li, HY Li, TQ Wan, XD Huang, YH He, XS Miao IEEE Electron Device Letters 41 (8), 1245-1248, 2020 | 63 | 2020 |
| Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing ZR Wang, Y Li, YT Su, YX Zhou, L Cheng, TC Chang, KH Xue, SM Sze, ... IEEE Transactions on Electron Devices 65 (10), 4659 - 4666, 2018 | 63 | 2018 |
| Nonvolatile reconfigurable sequential logic in HfO2 resistive random access memory array XSM Ya-Xiong Zhou†, Yi Li†, Yu-Ting Su, Zhuo-Rui Wang, Ling-Yi Shih, Ting ... Nanoscale 9, 6649-6657, 2017 | 63 | 2017 |
| 16 Boolean logics in three steps with two anti-serially connected memristors HSXM Yaxiong Zhou, Yi Li, Lei Xu, Shujing Zhong Applied Physics Letters 106 (23), 233502, 2015 | 63 | 2015 |
| Strategies to Improve the Accuracy of Memristor-Based Convolutional Neural Networks WQ Pan, J Chen, R Kuang, Y Li, YH He, GR Feng, N Duan, TC Chang, ... IEEE Transactions on Electron Devices 67 (3), 895-901, 2020 | 59 | 2020 |
| Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices CY Lin, J Chen, PH Chen, TC Chang, Y Wu, JK Eshraghian, J Moon, ... Small 16 (42), 2003964, 2020 | 58 | 2020 |
