| Oxygen behavior in aluminum nitride M Kazan, B Rufflé, C Zgheib, P Masri Journal of applied physics 98 (10), 2005 | 55 | 2005 |
| Temperature dependence of Raman-active modes in AlN M Kazan, C Zgheib, E Moussaed, P Masri Diamond and related materials 15 (4-8), 1169-1174, 2006 | 53 | 2006 |
| Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si (111) C Zgheib, LE McNeil, M Kazan, P Masri, FM Morales, O Ambacher, ... Applied Physics Letters 87 (4), 2005 | 38 | 2005 |
| Phonon dynamics in AlN lattice contaminated by oxygen M Kazan, B Rufflé, C Zgheib, P Masri Diamond and related materials 15 (10), 1525-1534, 2006 | 33 | 2006 |
| Ge-modified Si (100) substrates for the growth of 3C-SiC (100) C Zgheib, LE McNeil, P Masri, C Förster, FM Morales, T Stauden, ... Applied physics letters 88 (21), 2006 | 28 | 2006 |
| Stress and stress monitoring in SiC–Si heterostructures J Pezoldt, R Nader, F Niebelschütz, V Cimalla, T Stauden, C Zgheib, ... physica status solidi (a) 205 (4), 867-871, 2008 | 12 | 2008 |
| SIMS investigation of the influence of Ge pre‐deposition on the interface quality between SiC and Si J Pezoldt, C Zgheib, P Masri, M Averous, FM Morales, R Kosiba, G Ecke, ... Surface and Interface Analysis: An International Journal devoted to the …, 2004 | 11 | 2004 |
| The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon FM Morales, C Zgheib, SI Molina, D Araújo, R García, C Fernández, ... physica status solidi (c) 1 (2), 341-346, 2004 | 9 | 2004 |
| Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry J Pezoldt, C Zgheib, V Lebedev, P Masri, O Ambacher Superlattices and Microstructures 40 (4-6), 612-618, 2006 | 8 | 2006 |
| Stress control in 3C-SiC films grown on Si (111) C Zgheib, PM Masri, P Weih, O Ambacher, J Pezoldt Materials Science Forum 457, 301-304, 2004 | 7 | 2004 |
| Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces C Zgheib, C Förster, P Weih, V Cimalla, M Kazan, P Masri, O Ambacher, ... Thin solid films 455, 183-186, 2004 | 7 | 2004 |
| 5 μm thick 3C-SiC layers grown on Ge-modified Si (100) substrates C Zgheib, E Nassar, M Hamad, R Nader, P Masri, J Pezoldt, G Ferro Superlattices and Microstructures 40 (4-6), 638-643, 2006 | 6 | 2006 |
| Investigation of the interface manipulation in SiC (100) on Si (100) with isovalent impurities J Pezoldt, FM Morales, C Zgheib, C Förster, T Stauden, G Ecke, C Wang, ... Surface and Interface Analysis: An International Journal devoted to the …, 2006 | 6 | 2006 |
| Effect of Ge incorporation on stoichiometric composition of 3C‐SiC thin films grown on Si (111) substrates C Zgheib, M Kazan, P Weih, O Ambacher, P Masri, J Pezoldt physica status solidi (c) 2 (4), 1284-1287, 2005 | 4 | 2005 |
| Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions P Weih, T Stauden, G Ecke, S Shokhovets, C Zgheib, M Voelskow, ... physica status solidi (a) 202 (4), 545-549, 2005 | 4 | 2005 |
| Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si (111) FM Morales, C Zgheib, SI Molina, D Araujo, R García, C Fernández, ... Materials Science Forum 457, 297-300, 2004 | 4 | 2004 |
| Diamond Relat. Mater M Kazan, C Zgheib, E Moussaed, P Masri | 3 | 2006 |
| Thermo-Mechanical Simulation of Self-Heating of a High-Power Diode Made of Ti3SiC2 (MAX) Phase-on-4H-SiC Substrate V Abou Hamad, M Soueidan, H Hamad, L Gremillard, D Fabregue, ... Journal of Thermal Science 30, 939-949, 2021 | 2 | 2021 |
| Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates J Pezoldt, C Zgheib, T Stauden, G Ecke, T Kups, HO Jacobs, P Weih Materials Science Forum 963, 127-130, 2019 | 2 | 2019 |
| A wideband V-shaped coplanar patch antenna for 2-6 GHz designed for energy harvesting and wireless communications M El Zoghbi, V Abou Hamad, R Ibrahim, A Breard, C Zgheib, E Nassar, ... International Journal on Communications Antenna and Propagation 8 (5), 406, 2018 | 2 | 2018 |
PezoldtTU IlmenauПотвърден имейл адрес: tu-ilmenau.de
