| Atom-probe for FinFET dopant characterization AK Kambham, J Mody, M Gilbert, S Koelling, W Vandervorst Ultramicroscopy 111 (6), 535-539, 2011 | 65 | 2011 |
| In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography S Koelling, N Innocenti, A Schulze, M Gilbert, AK Kambham, ... Journal of Applied Physics 109 (10), 2011 | 54 | 2011 |
| Atom probe analysis of a 3D finFET with high-k metal gate M Gilbert, W Vandervorst, S Koelling, AK Kambham Ultramicroscopy 111 (6), 530-534, 2011 | 50 | 2011 |
| Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography AK Kambham, A Kumar, A Florakis, W Vandervorst Nanotechnology 24 (27), 275705, 2013 | 45 | 2013 |
| Dopant/carrier profiling for 3D‐structures W Vandervorst, A Schulze, AK Kambham, J Mody, M Gilbert, P Eyben physica status solidi (c) 11 (1), 121-129, 2014 | 35 | 2014 |
| Characteristics of cross-sectional atom probe analysis on semiconductor structures S Koelling, N Innocenti, G Hellings, M Gilbert, AK Kambham, K De Meyer, ... Ultramicroscopy 111 (6), 540-545, 2011 | 28 | 2011 |
| 3D-carrier profiling in FinFETs using scanning spreading resistance microscopy J Mody, G Zschaetzsch, S Koelling, A De Keersgieter, G Eneman, ... 2011 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2011 | 25 | 2011 |
| Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution J Mody, AK Kambham, G Zschaetzsch, P Schatzer, T Chiarella, N Collaert, ... 2010 Symposium on VLSI Technology, 195-196, 2010 | 21 | 2010 |
| 3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography AK Kambham, A Kumar, M Gilbert, W Vandervorst Ultramicroscopy 132, 65-69, 2013 | 18 | 2013 |
| High performance n-MOS finFET by damage-free, conformal extension doping G Zschaetzsch, Y Sasaki, S Hayashi, M Togo, T Chiarella, AK Kambham, ... 2011 International Electron Devices Meeting, 35.6. 1-35.6. 4, 2011 | 14 | 2011 |
| Atomic insight into Ge1− xSnx using atom probe tomography A Kumar, MP Komalan, H Lenka, AK Kambham, M Gilbert, F Gencarelli, ... Ultramicroscopy 132, 171-178, 2013 | 11 | 2013 |
| Atom probe tomography for 3D-dopant analysis in FinFET devices AK Kambham, G Zschaetzsch, Y Sasaki, M Togo, N Horiguchi, J Mody, ... 2012 Symposium on VLSI Technology (VLSIT), 77-78, 2012 | 9 | 2012 |
| Atom-probe-tomographic studies on silicon-based semiconductor devices K Inoue, AK Kambham, D Mangelinck, D Lawrence, DJ Larson Microscopy Today 20 (5), 38-44, 2012 | 7 | 2012 |
| Dopant and carrier profiling for 3D-device architectures J Mody, AK Kambham, G Zschaetzsch, T Chiarella, N Collaert, L Witters, ... 11th International Workshop on Junction Technology (IWJT), 108-113, 2011 | 6 | 2011 |
| IEDM Tech. Dig. G Zschätzsch IEDM Tech. Dig, 841, 2011 | 5 | 2011 |
| Junction strategies for 1x nm technology node with FINFET and high mobility channel N Horiguchi, G Zschaetzsch, Y Sasaki, AK Kambham, B Douhard, M Togo, ... 2012 12th International Workshop on Junction Technology, 216-221, 2012 | 4 | 2012 |
| Advantages and challenges of 3-D atom probe tomography characterization of FinFETs AJ Martin, AK Kambham, AD Katnani Electron Device Failure Anal 19 (2), 22-30, 2017 | 2 | 2017 |
| Analysis of Dopant Diffusion and Defects in Fin structure using an Atomistic Kinetic Monte Carlo Approach T Noda, AK Kambham, C Vrancken, A Thean, N Horiguchi, W Vandervorst Electron Devices Meeting (IEDM), 2013 IEEE International, 5.7. 1-5.7. 4, 2013 | 2 | 2013 |
| Study of Sn migration during relaxation of Ge1‐xSnx layers using atom probe tomography A Kumar, F Gencarelli, AK Kambham, M Gilbert, B Vincent, W Vandervorst physica status solidi (c) 9 (10‐11), 1924-1930, 2012 | 1 | 2012 |
| Application of Atom Probe on Fully Depleted Silicon-On-Insulator (FDSOI) Structures AK Kambham, D Flatoff, B Fu Microscopy and Microanalysis 22 (S3), 696-697, 2016 | | 2016 |
Jay ModyIntelПотвърден имейл адрес: intel.com
