Effect of pavement design parameters on the behaviour of orthotropic steel bridge deck pavements under traffic loading TW Kim, J Baek, HJ Lee, SY Lee
International Journal of Pavement Engineering 15 (5), 471-482, 2014
72 2014 Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs JW Chung, TW Kim, T Palacios
2010 International Electron Devices Meeting, 30.2. 1-30.2. 4, 2010
65 2010 InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
59 2013 Fatigue performance evaluation of SBS modified mastic asphalt mixtures TW Kim, J Baek, HJ Lee, JY Choi
Construction and Building Materials 48, 908-916, 2013
54 2013 Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
53 2013 A simple fatigue performance model of asphalt mixtures based on fracture energy Q Li, HJ Lee, TW Kim
Construction and Building Materials 27 (1), 605-611, 2012
53 2012 Atomic layer etching of InP using a low angle forward reflected Ne neutral beam SD Park, CK Oh, JW Bae, GY Yeom, TW Kim, JI Song, JH Jang
Applied physics letters 89 (4), 043109, 2006
53 2006 Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
50 2009 Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
43 2019 A self-aligned InGaAs quantum-well metal–oxide–semiconductor field-effect transistor fabricated through a lift-off-free front-end process J Lin, TW Kim, DA Antoniadis, JA del Alamo
Applied Physics Express 5 (6), 064002, 2012
43 2012 Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2 O3 /HfO2 (EOT < 1 nm) for low-power logic applications TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
42 2013 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics TW Kim, DH Kim, JA del Alamo
2010 International Electron Devices Meeting, 30.7. 1-30.7. 4, 2010
40 2010 ETB-QW InAs MOSFET with scaled body for improved electrostatics TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ...
2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012
39 2012 Pharmaceutical composition for preventing and treating diabetes or glucose control abnormality comprising ginsenosides SS Woo, DS Kim, SG Do, YC Lee, MS Oh, JM Cha, JH Kim, TW Kim
US Patent 7,985,848, 2011
39 2011 L0.53 Ga0.47 As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2 O3 /HfO2 Gate-Stack TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ...
IEEE Electron Device Letters 36 (3), 223-225, 2015
34 2015 InAs quantum-well MOSFET (Lg = 100 nm) with record high gm , fT and fmax TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ...
2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012
34 2012 Lg = 60 nm recessed In0.7 Ga0.3 As metal-oxide-semiconductor field-effect transistors with Al2 O3 insulator DH Kim, JA del Alamo, DA Antoniadis, J Li, JM Kuo, P Pinsukanjana, ...
Applied Physics Letters 101 (22), 223507, 2012
31 2012 Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ...
Applied Physics Express 12 (5), 054006, 2019
30 2019 Evaluation of the anti-obesity activity of Platycodon grandiflorum root and Curcuma longa root fermented with Aspergillus oryzae YH Kang, KK Kim, TW Kim, CS Yang, M Choe
Korean Journal of Food Science and Technology 47 (1), 111-118, 2015
30 2015 High-performance III–V devices for future logic applications DH Kim, TW Kim, RH Baek, PD Kirsch, W Maszara, JA Del Alamo, ...
2014 IEEE International Electron Devices Meeting, 25.2. 1-25.2. 4, 2014
29 2014 
Dae-Hyun KIMAssociate Professor, College of IT Engineering, School of Electronics Engineering, SemiconductorПотвърден имейл адрес: ee.knu.ac.kr
