Следене
Tae-Woo Kim
Tae-Woo Kim
Потвърден имейл адрес: ulsan.ac.kr
Заглавие
Позовавания
Позовавания
Година
Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom
Applied physics letters 91 (10), 2007
1632007
Effect of pavement design parameters on the behaviour of orthotropic steel bridge deck pavements under traffic loading
TW Kim, J Baek, HJ Lee, SY Lee
International Journal of Pavement Engineering 15 (5), 471-482, 2014
842014
Advanced gate technologies for state-of-the-art fTin AlGaN/GaN HEMTs
JW Chung, TW Kim, T Palacios
2010 International Electron Devices Meeting, 30.2. 1-30.2. 4, 2010
722010
Fatigue performance evaluation of SBS modified mastic asphalt mixtures
TW Kim, J Baek, HJ Lee, JY Choi
Construction and Building Materials 48, 908-916, 2013
662013
InGaAs MOSFETs for CMOS: Recent advances in process technology
JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
612013
Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition
MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
562019
A simple fatigue performance model of asphalt mixtures based on fracture energy
Q Li, HJ Lee, TW Kim
Construction and Building Materials 27 (1), 605-611, 2012
562012
Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
SD Park, CK Oh, JW Bae, GY Yeom, TW Kim, JI Song, JH Jang
Applied physics letters 89 (4), 2006
562006
Quantum capacitance in scaled down III–V FETs
D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
542009
Positive bias instability and recovery in InGaAs channel nMOSFETs
S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
492013
Pharmaceutical composition for preventing and treating diabetes or glucose control abnormality comprising Ginsenosides
SS Woo, DS Kim, SG Do, YC Lee, MS Oh, JM Cha, JH Kim, TW Kim
US Patent 7,985,848, 2011
472011
Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz
HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ...
Applied Physics Express 12 (5), 054006, 2019
452019
A self-aligned InGaAs quantum-well metal–oxide–semiconductor field-effect transistor fabricated through a lift-off-free front-end process
J Lin, TW Kim, DA Antoniadis, JA del Alamo
Applied Physics Express 5 (6), 064002, 2012
442012
60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics
TW Kim, DH Kim, JA del Alamo
2010 International Electron Devices Meeting, 30.7. 1-30.7. 4, 2010
442010
Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications
TW Kim, DH Kim, DH Koh, HM Kwon, RH Baek, D Veksler, C Huffman, ...
2013 IEEE International Electron Devices Meeting, 16.3. 1-16.3. 4, 2013
432013
ETB-QW InAs MOSFET with scaled body for improved electrostatics
TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ...
2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012
402012
nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and of 559 GHz
HB Jo, JM Baek, DY Yun, SW Son, JH Lee, TW Kim, DH Kim, T Tsutsumi, ...
IEEE Electron Device Letters 39 (11), 1640-1643, 2018
372018
L-nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2Gate-Stack
TW Kim, DH Koh, CS Shin, WK Park, T Orzali, C Hobbs, WP Maszara, ...
IEEE Electron Device Letters 36 (3), 223-225, 2015
352015
InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax
TW Kim, RJW Hill, CD Young, D Veksler, L Morassi, S Oktybrshky, J Oh, ...
2012 Symposium on VLSI Technology (VLSIT), 179-180, 2012
352012
Evaluation of the anti-obesity activity of Platycodon grandiflorum root and Curcuma longa root fermented with Aspergillus oryzae
YH Kang, KK Kim, TW Kim, CS Yang, M Choe
Korean Journal of Food Science and Technology 47 (1), 111-118, 2015
322015
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