Resistance random access memory TC Chang, KC Chang, TM Tsai, TJ Chu, SM Sze
Materials Today 19 (5), 254-264, 2016
484 2016 Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10, 1-27, 2015
156 2015 Redox Reaction Switching Mechanism in RRAM Device With YE Syu, TC Chang, TM Tsai, YC Hung, KC Chang, MJ Tsai, MJ Kao, ...
IEEE Electron Device Letters 32 (4), 545-547, 2011
137 2011 Atomic-level quantized reaction of HfOx memristor YE Syu, TC Chang, JH Lou, TM Tsai, KC Chang, MJ Tsai, YL Wang, M Liu, ...
Applied Physics Letters 102 (17), 2013
126 2013 Integrated One Diode–One Resistor Architecture in Nanopillar SiOx L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Nano letters 14 (2), 813-818, 2014
112 2014 Functionally complete Boolean logic in 1T1R resistive random access memory ZR Wang, YT Su, Y Li, YX Zhou, TJ Chu, KC Chang, TC Chang, TM Tsai, ...
IEEE Electron Device Letters 38 (2), 179-182, 2016
108 2016 Nanopolydopamine coupled fluorescent nanozinc oxide reinforced epoxy nanocomposites C Liang, P Song, H Gu, C Ma, Y Guo, H Zhang, X Xu, Q Zhang, J Gu
Composites Part A: Applied Science and Manufacturing 102, 126-136, 2017
103 2017 Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon C Ye, C Zhan, TM Tsai, KC Chang, MC Chen, TC Chang, T Deng, ...
Applied Physics Express 7 (3), 034101, 2014
100 2014 A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid MC Chen, TC Chang, SY Huang, KC Chang, HW Li, SC Chen, J Lu, Y Shi
Applied Physics Letters 94 (16), 2009
86 2009 HfO2 ‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO2 /BiFeO3 /HfO2 Design Z Peng, F Wu, L Jiang, G Cao, B Jiang, G Cheng, S Ke, KC Chang, L Li, ...
Advanced Functional Materials 31 (48), 2107131, 2021
73 2021 Characteristics and mechanisms of silicon-oxide-based resistance random access memory KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ...
IEEE electron device letters 34 (3), 399-401, 2013
72 2013 Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ...
Nanoscale 9 (25), 8586-8590, 2017
71 2017 Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ...
IEEE Electron Device Letters 34 (4), 502-504, 2013
69 2013 Low Temperature Improvement Method on KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ...
IEEE electron device letters 34 (4), 511-513, 2013
67 * 2013 Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array YX Zhou, Y Li, YT Su, ZR Wang, LY Shih, TC Chang, KC Chang, SB Long, ...
Nanoscale 9 (20), 6649-6657, 2017
63 2017 Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory R Zhang, KC Chang, TC Chang, TM Tsai, SY Huang, WJ Chen, KH Chen, ...
IEEE electron device letters 35 (6), 630-632, 2014
62 2014 Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment KC Chang, TM Tsai, TC Chang, YE Syu, CC Wang, SL Chuang, CH Li, ...
Applied Physics Letters 99 (26), 2011
61 2011 Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
IEEE electron device letters 34 (5), 677-679, 2013
60 2013 The effect of silicon oxide based RRAM with tin doping KC Chang, TM Tsai, TC Chang, YE Syu, SL Chuang, CH Li, DS Gan, ...
Electrochemical and Solid-State Letters 15 (3), H65, 2011
59 2011 Realization of functional complete stateful Boolean logic in memristive crossbar Y Li, YX Zhou, L Xu, K Lu, ZR Wang, N Duan, L Jiang, L Cheng, ...
ACS applied materials & interfaces 8 (50), 34559-34567, 2016
57 2016 