Следене
Hugues Marchand
Hugues Marchand
Няма данни за членство
Няма потвърден имейл адрес
Заглавие
Позовавания
Позовавания
Година
Electrical characterization of GaN junctions with and without threading dislocations
P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
4851998
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
G Parish, S Keller, P Kozodoy, JP Ibbetson, H Marchand, PT Fini, ...
Applied Physics Letters 75 (2), 247-249, 1999
4281999
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
H Marchand, XH Wu, JP Ibbetson, PT Fini, P Kozodoy, S Keller, JS Speck, ...
Applied physics letters 73 (6), 747-749, 1998
3191998
Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors
H Marchand, L Zhao, N Zhang, B Moran, R Coffie, UK Mishra, JS Speck, ...
journal of Applied Physics 89 (12), 7846-7851, 2001
2492001
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
SF Chichibu, H Marchand, MS Minsky, S Keller, PT Fini, JP Ibbetson, ...
Applied physics letters 74 (10), 1460-1462, 1999
2321999
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
H Marchand, JP Ibbetson, PT Fini, S Keller, SP DenBaars, JS Speck, ...
Journal of Crystal Growth 195 (1-4), 328-332, 1998
1601998
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
H Marchand, JP Ibbetson, PT Fini, P Kozodoy, S Keller, S DenBaars, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1998
158*1998
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
P Fini, L Zhao, B Moran, M Hansen, H Marchand, JP Ibbetson, ...
Applied Physics Letters 75 (12), 1706-1708, 1999
1331999
Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride
SJ Rosner, G Girolami, H Marchand, PT Fini, JP Ibbetson, L Zhao, ...
Applied physics letters 74 (14), 2035-2037, 1999
1231999
Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP (001)
H Marchand, P Desjardins, S Guillon, JE Paultre, Z Bougrioua, RYF Yip, ...
Applied physics letters 71 (4), 527-529, 1997
1161997
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
P Fini, H Marchand, JP Ibbetson, SP DenBaars, UK Mishra, JS Speck
Journal of crystal growth 209 (4), 581-590, 2000
1132000
Method of controlling stress in gallium nitride films deposited on substrates
H Marchand, BJ Moran
US Patent 7,687,888, 2010
922010
Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer
H Marchand, N Zhang, L Zhao, Y Golan, SJ Rosner, G Girolami, PT Fini, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
851999
Thermal conductivity of lateral epitaxial overgrown GaN films
CY Luo, H Marchand, DR Clarke, SP DenBaars
Applied Physics Letters 75 (26), 4151-4153, 1999
741999
Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures
AR Stonas, P Kozodoy, H Marchand, P Fini, SP DenBaars, UK Mishra, ...
Applied Physics Letters 77 (16), 2610-2612, 2000
612000
Method of controlling stress in group-III nitride films deposited on substrates
H Marchand, BJ Moran, UK Mishra, JS Speck
US Patent 9,129,977, 2015
34*2015
Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
A Lochtefeld, H Marchand
US Patent 9,012,253, 2015
322015
Method of controlling stress in gallium nitride films deposited on substrates
H Marchand, BJ Moran
US Patent 7,816,764, 2010
302010
10 Gb/s Mach-Zehnder modulator integrated with widely-tunable sampled grating DBR Laser
YA Akulova, GA Fish, P Koh, P Kozodoy, M Larson, C Schow, E Hall, ...
Optical Fiber Communication Conference, 2004. OFC 2004 1, 395, 2004
292004
A monolithic chemical sensor using tandem heterodyned sampled grating DBR lasers
DA Cohen, E Skogen, J Nolde, D Tung, LA Coldren
LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society …, 2001
292001
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20