| Nanostructured-NiO/Si heterojunction photodetector B Parida, S Kim, M Oh, S Jung, M Baek, JH Ryou, H Kim Materials science in Semiconductor Processing 71, 29-34, 2017 | 73 | 2017 |
| Graphene-GaN Schottky diodes S Kim, TH Seo, MJ Kim, KM Song, EK Suh, H Kim Nano Research 8, 1327-1338, 2015 | 68 | 2015 |
| Electrical characteristics of Pt Schottky contacts fabricated on amorphous gallium indium zinc oxides H Kim, S Kim, KK Kim, SN Lee, KS Ahn Japanese journal of applied physics 50 (10R), 105702, 2011 | 31 | 2011 |
| Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses HK Kim, SI Kim, S Kim, NS Lee, HK Shin, CW Lee Nanoscale 12 (15), 8216-8229, 2020 | 25 | 2020 |
| Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures S Kim, JH Ryou, RD Dupuis, H Kim Applied physics letters 102 (5), 2013 | 22 | 2013 |
| Investigation of Fermi level pinning at semipolar (11–22) p-type GaN surfaces YY Choi, S Kim, M Oh, H Kim, TY Seong Superlattices and Microstructures 77, 76-81, 2015 | 19 | 2015 |
| Compound Ag nanocluster-graphene electrodes as transparent and current spreading electrodes for improved light output power in near-ultraviolet light emitting diodes TH Seo, S Kim, MJ Kim, H Kim, EK Suh Journal of Physics D: Applied Physics 47 (21), 215103, 2014 | 19 | 2014 |
| Carrier transport mechanism at metal/amorphous gallium indium zinc oxides interfaces S Kim, KK Kim, H Kim Applied Physics Letters 101 (3), 2012 | 16 | 2012 |
| Carrier transport at metal/amorphous hafnium–indium–zinc oxide interfaces S Kim, Y Gil, Y Choi, KK Kim, HJ Yun, B Son, CJ Choi, H Kim ACS Applied Materials & Interfaces 7 (40), 22385-22393, 2015 | 14 | 2015 |
| Effects of temperature on current crowding of GaN-based light-emitting diodes E Jung, S Kim, H Kim IEEE electron device letters 34 (2), 277-279, 2013 | 13 | 2013 |
| Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer M Oh, JW Yang, H Kim, S Kim, KS Ahn Journal of the Korean Physical Society 76, 278-280, 2020 | 7 | 2020 |
| Carrier transport properties of Mg-doped InAlN films S Kim, HJ Kim, S Choi, Z Lochner, JH Ryou, RD Dupuis, H Kim Electronics letters 48 (20), 1306-1308, 2012 | 7 | 2012 |
| Electrical Characteristics of Ti/Al Contacts on AlInN: Mg/GaN Heterostructures S Kim, HJ Kim, S Choi, Z Lochner, JH Ryou, RD Dupuis, KS Ahn, H Kim Japanese Journal of Applied Physics 52 (10S), 10MA07, 2013 | 6 | 2013 |
| Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures S Kim, HJ Kim, S Choi, JH Ryou, RD Dupuis, KS Ahn, H Kim Japanese Journal of Applied Physics 52 (10S), 10MA05, 2013 | 6 | 2013 |
| Ohmic contact mechanism for Ni/C-faced 4H-n-SiC substrate S Kim, HK Kim, M Lim, S Jeong, MJ Kang, MS Kang, NS Lee, TV Cuong, ... Journal of Nanomaterials 2019, 1-5, 2019 | 5 | 2019 |
| Carrier transport mechanism of Al contacts on n-type 4H-SiC S Kim, HK Kim, S Jeong, MJ Kang, MS Kang, NS Lee, TV Cuong, SM Koo, ... Materials Letters 228, 232-234, 2018 | 5 | 2018 |
| Electrical and optical characteristics of GaN-based light-emitting diodes fabricated with emission wavelengths of 429–467 nm E Jung, S Kim, H Kim Current applied physics 12 (3), 885-889, 2012 | 5 | 2012 |
| Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model S Kim, CJ Choi, H Kim Electronics letters 49 (8), 561-562, 2013 | 4 | 2013 |
| Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors S Kim, KS Ahn, JH Ryou, H Kim Electronic Materials Letters 13, 302-306, 2017 | 2 | 2017 |
| Surface characterization of ion implanted 4H-SiC epitaxial layers with ion energy and concentration variations HK Kim, SJ Kim, J Buettner, MW Lim, T Erlbacher, AJ Bauer, SM Koo, ... Materials Science Forum 963, 429-432, 2019 | 1 | 2019 |
Jae-Hyun RyouAssociate Professor, Mechanical Engineeering, University of HoustonПотвърден имейл адрес: uh.edu
