Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
433 2013 Semipolar DF Feezell, JS Speck, SP DenBaars, S Nakamura
Journal of Display Technology 9 (99), 1-9, 2013
369 2013 COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs JW Raring, DF Feezell, MP D'evelyn
US Patent App. 12/491,176, 2010
307 2010 Solid-state optical device having enhanced indium content in active regions JW Raring, DF Feezell, S Nakamura
US Patent 8,847,249, 2014
285 2014 HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN JW Raring, DF Feezell
US Patent App. 12/481,543, 2010
282 2010 Demonstration of nonpolar m-plane InGaN/GaN laser diodes MC Schmidt, KC Kim, RM Farrell, DF Feezell, DA Cohen, M Saito, K Fujito, ...
Japanese journal of applied physics 46 (3L), L190, 2007
261 2007 Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser DF Feezell, DA Cohen, RM Farrell, M Ishida, S Nakamura
US Patent 7,480,322, 2009
248 2009 Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers RM Farrell, MC Schmidt, KC Kim, H Masui, DF Feezell, JS Speck, ...
US Patent 7,839,903, 2010
247 2010 High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 Y Zhao, S Tanaka, CC Pan, K Fujito, D Feezell, JS Speck, SP DenBaars, ...
Applied physics express 4 (8), 082104, 2011
239 2011 Optical device structure using GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister, R Sharma
US Patent 9,531,164, 2016
232 2016 Selective area epitaxy growth method and structure JW Raring, DF Feezell, S Nakamura
US Patent App. 12/482,440, 2009
228 2009 Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells Y Zhao, Q Yan, CY Huang, SC Huang, P Shan Hsu, S Tanaka, CC Pan, ...
Applied Physics Letters 100 (20), 201108, 2012
203 2012 Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister
US Patent 8,143,148, 2012
200 2012 Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates JW Raring, DF Feezell
US Patent 8,259,769, 2012
199 2012 Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes DF Feezell, MC Schmidt, KC Kim, RM Farrell, DA Cohen, JS Speck, ...
US Patent 8,211,723, 2012
191 2012 Method and structure for manufacture of light emitting diode devices using bulk GaN C Poblenz, MC Schmidt, DF Feezell, JW Raring, R Sharma
US Patent 8,252,662, 2012
183 2012 Optical device structure using miscut GaN substrates for laser applications JW Raring, DF Feezell, NJ Pfister
US Patent 8,422,525, 2013
181 2013 Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura
Materials Today 14 (9), 408-415, 2011
178 2011 Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers C Holder, JS Speck, SP DenBaars, S Nakamura, D Feezell
Applied Physics Express 5 (9), 092104, 2012
176 2012 Self-aligned multi-dielectric-layer lift off process for laser diode stripes JW Raring, DF Feezell, N Pfister
US Patent 8,728,842, 2014
174 2014 
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
