Wayne Johnson

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2018
Позовавания	6802	1946
h-индекс	50	23
i10-индекс	110	60

500

250

125

375

2002200320042005200620072008200920102011201220132014201520162017201820192020202120222023134 187 166 131 249 227 300 289 280 403 316 496 389 407 379 454 394 365 366 317 312 192

Публичен достъп

Преглед на всички

6 статии

2 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Fan RenUniversity of Florida, Bell Lab, AT&TПотвърден имейл адрес: che.ufl.edu
Stephen PeartonProfessor of Materials Science and Engineering, University of FloridaПотвърден имейл адрес: mse.ufl.edu
Edwin PinerProfessor, Texas State UniversityПотвърден имейл адрес: txstate.edu
Yu CaoQorvoПотвърден имейл адрес: qorvo.com
Brent P. GilaUniversity of FloridaПотвърден имейл адрес: ufl.edu
Cammy R AbernathyUniversity of FloridaПотвърден имейл адрес: eng.ufl.edu
Sameer SinghalDirector, CFD Research CorpПотвърден имейл адрес: cfdrc.com
Lu LiuUniversity of Florida, Stanford UniversityПотвърден имейл адрес: stanford.edu
Debdeep JenaCornell UniversityПотвърден имейл адрес: cornell.edu
Huili Grace XingProf. of ECE & MSE, Cornell UniversityПотвърден имейл адрес: cornell.edu
Andrei VescanRWTH AachenПотвърден имейл адрес: cst.rwth-aachen.de
Jihyun KimSeoul National UniversityПотвърден имейл адрес: snu.ac.kr
Patrick Fayelectrical engineering, University of Notre DameПотвърден имейл адрес: nd.edu
Isik KizilyalliARPA-e, U.S.Department of EnergyПотвърден имейл адрес: hq.doe.gov
Jen-Inn ChyiProfessor of National Central UniversityПотвърден имейл адрес: ee.ncu.edu.tw
Guowang LiGoogleПотвърден имейл адрес: google.com
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityПотвърден имейл адрес: yale.edu
Yu-Lin WangNational Tsing Hua University, Institute of Nanoengineering and MicrosystemsПотвърден имейл адрес: mx.nthu.edu.tw
Byung-Hwan ChuIBM, Samsung, U or FloridaПотвърден имейл адрес: ufl.edu
Tanmay LeleTexas A&M UniversityПотвърден имейл адрес: tamu.edu

Следене

Wayne Johnson

Други именаJW Johnson, W Johnson

Soundside Partners LLC

Потвърден имейл адрес: soundsidepartners.com

GaN SiC RF/microwave power electronics compound semiconductors


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
12 W/mm AlGaN-GaN HFETs on silicon substrates JW Johnson, EL Piner, A Vescan, R Therrien, P Rajagopal, JC Roberts, ... IEEE Electron Device Letters 25 (7), 459-461, 2004	303	2004
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ... Applied Physics Letters 80 (9), 1661-1663, 2002	220	2002
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ... IEEE Electron Device Letters 36 (4), 375-377, 2015	193	2015
Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕ GaN high electron mobility transistors BS Kang, HT Wang, F Ren, SJ Pearton, TE Morey, DM Dennis, ... Applied Physics Letters 91 (25), 2007	174	2007
Gallium nitride material devices including an electrode-defining layer and methods of forming the same JW Johnson, RJ Therrien, A Vescan, JD Brown US Patent 7,071,498, 2006	173	2006
Pressure-induced changes in the conductivity of AlGaN∕ GaN high-electron mobility-transistor membranes BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ... Applied Physics Letters 85 (14), 2962-2964, 2004	162	2004
Prostate specific antigen detection using AlGaN∕ GaN high electron mobility transistors BS Kang, HT Wang, TP Lele, Y Tseng, F Ren, SJ Pearton, JW Johnson, ... Applied physics letters 91 (11), 2007	143	2007
metal-oxide-semiconductor field-effect transistor JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ... Applied Physics Letters 77 (20), 3230-3232, 2000	143	2000
DC and RF performance of proton-irradiated AlGaN/GaN high electron mobility transistors B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ... Applied Physics Letters 79 (14), 2196-2198, 2001	139	2001
Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕ GaN high electron mobility transistors BS Kang, SJ Pearton, JJ Chen, F Ren, JW Johnson, RJ Therrien, ... Applied Physics Letters 89 (12), 2006	138	2006
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ... IEEE Transactions on Electron devices 49 (1), 32-36, 2002	130	2002
210-GHz InAlN/GaN HEMTs with dielectric-free passivation R Wang, G Li, O Laboutin, Y Cao, W Johnson, G Snider, P Fay, D Jena, ... IEEE electron device letters 32 (7), 892-894, 2011	128	2011
GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ... Materials Science and Engineering: B 82 (1-3), 227-231, 2001	128	2001
Reliability of large periphery GaN-on-Si HFETs S Singhal, T Li, A Chaudhari, AW Hanson, R Therrien, JW Johnson, ... Microelectronics Reliability 46 (8), 1247-1253, 2006	122	2006
Lateral power rectifiers with 9.7 kV reverse breakdown voltage AP Zhang, JW Johnson, F Ren, J Han, AY Polyakov, NB Smirnov, ... Applied Physics Letters 78 (6), 823-825, 2001	120	2001
Nanowire Channel InAlN/GaN HEMTs With High Linearity ofand DS Lee, H Wang, A Hsu, M Azize, O Laboutin, Y Cao, JW Johnson, ... IEEE electron device letters 34 (8), 969-971, 2013	116	2013
Influence of γ-rays on dc performance of AlGaN/GaN high electron mobility transistors B Luo, JW Johnson, F Ren, KK Allums, CR Abernathy, SJ Pearton, ... Applied physics letters 80 (4), 604-606, 2002	115	2002
Gadolinium oxide and scandium oxide: gate dielectrics for GaN MOSFETs BP Gila, JW Johnson, R Mehandru, B Luo, AH Onstine, V Krishnamoorthy, ... physica status solidi (a) 188 (1), 239-242, 2001	115	2001
Fast electrical detection of Hg (II) ions with AlGaN∕ GaN high electron mobility transistors HT Wang, BS Kang, TF Chancellor, TP Lele, Y Tseng, F Ren, SJ Pearton, ... Applied Physics Letters 91 (4), 2007	106	2007
Semiconductor device-based sensors JW Johnson, EL Piner, KJ Linthicum US Patent 7,361,946, 2008	105	2008

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Статии 1–20

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