Kathleen Kash
Kathleen Kash
Professor of Physics, Case Western Reserve University
Потвърден имейл адрес: case.edu
Novel applications of photonic band gap materials: Low‐loss bends and high Q cavities
RD Meade, A Devenyi, JD Joannopoulos, OL Alerhand, DA Smith, K Kash
Journal of applied physics 75 (9), 4753-4755, 1994
Optical spectroscopy of ultrasmall structures etched from quantum wells
K Kash, A Scherer, JM Worlock, HG Craighead, MC Tamargo
Applied Physics Letters 49 (16), 1043-1045, 1986
Optical properties of III–V semiconductor quantum wires and dots
K Kash
Journal of luminescence 46 (2), 69-82, 1990
Synthesis, lattice structure, and band gap of ZnSnN2
PC Quayle, K He, J Shan, K Kash
MRS Communications 3 (3), 135-138, 2013
Observation of quantum confinement by strain gradients
K Kash, BP Van der Gaag, DD Mahoney, AS Gozdz, LT Florez, ...
Physical review letters 67 (10), 1326, 1991
Carrier energy relaxation in In0. 53Ga0. 47As determined from picosecond luminescence studies
K Kash, J Shah
Applied physics letters 45 (4), 401-403, 1984
Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures
K Kash, JM Worlock, MD Sturge, P Grabbe, JP Harbison, A Scherer, ...
Applied physics letters 53 (9), 782-784, 1988
Long-lived spatially indirect excitons in coupled GaAs/As quantum wells
JE Golub, K Kash, JP Harbison, LT Florez
Physical Review B 41 (12), 8564, 1990
Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule
PC Quayle, EW Blanton, A Punya, GT Junno, K He, L Han, H Zhao, ...
physical review B 91 (20), 205207, 2015
Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates
E Kapon, K Kash, EM Clausen Jr, DM Hwang, E Colas
Applied physics letters 60 (4), 477-479, 1992
Picosecond luminescence measurements of hot carrier relaxation in III–V semiconductors using sum frequency generation
K Kash, J Shah, D Block, AC Gossard, W Wiegmann
Physica B+ C 134 (1-3), 189-198, 1985
Strain‐induced confinement of carriers to quantum wires and dots within an InGaAs‐InP quantum well
K Kash, R Bhat, DD Mahoney, PSD Lin, A Scherer, JM Worlock, ...
Applied physics letters 55 (7), 681-683, 1989
Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources
K Du, C Bekele, CC Hayman, JC Angus, P Pirouz, K Kash
Journal of Crystal Growth 310 (6), 1057-1061, 2008
Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
R Bhat, MA Koza, K Kash, SJ Allen, WP Hong, SA Schwarz, GK Chang, ...
Journal of crystal growth 108 (3-4), 441-448, 1991
Aluminum ion‐implantation enhanced intermixing of GaAs‐AlGaAs quantum‐well structures
K Kash, B Tell, P Grabbe, EA Dobisz, HG Craighead, MC Tamargo
Journal of applied physics 63 (1), 190-194, 1988
Low pressure synthesis of bulk, polycrystalline gallium nitride
A Argoitia, CC Hayman, JC Angus, L Wang, JS Dyck, K Kash
Applied Physics Letters 70 (2), 179-181, 1997
Electrochemical pinning of the Fermi level: mediation of photoluminescence from gallium nitride and zinc oxide
V Chakrapani, C Pendyala, K Kash, AB Anderson, MK Sunkara, JC Angus
Journal of the American Chemical Society 130 (39), 12944-12952, 2008
Temperature dependence of luminescence efficiency, exciton transfer, and exciton localization in GaAs/As quantum wires and quantum dots
Y Zhang, MD Sturge, K Kash, BP Van der Gaag, AS Gozdz, LT Florez, ...
Physical Review B 51 (19), 13303, 1995
Nonlinear optical studies of picosecond relaxation times of electrons in n‐GaAs and n‐GaSb
K Kash, PA Wolff, WA Bonner
Applied Physics Letters 42 (2), 173-175, 1983
Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems
MC Wang, K Kash, CE Zah, R Bhat, SL Chuang
Applied physics letters 62 (2), 166-168, 1993
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