Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
356 2018 Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
123 2019 Flexible gallium nitride for high‐performance, strainable radio‐frequency devices NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ...
Advanced Materials 29 (47), 1701838, 2017
117 2017 Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham
Journal of Applied Physics 113 (9), 2013
113 2013 Thermometry of AlGaN/GaN HEMTs using multispectral raman features S Choi, ER Heller, D Dorsey, R Vetury, S Graham
IEEE Transactions on Electron Devices 60 (6), 1898-1904, 2013
107 2013 The impact of bias conditions on self-heating in AlGaN/GaN HEMTs S Choi, ER Heller, D Dorsey, R Vetury, S Graham
IEEE transactions on electron devices 60 (1), 159-162, 2012
86 2012 The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham
Journal of Applied Physics 114 (16), 2013
79 2013 Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs E Heller, S Choi, D Dorsey, R Vetury, S Graham
Microelectronics Reliability 53 (6), 872-877, 2013
77 2013 Prediction of giant values from a calculation of excitonic nonlinear optical properties in rectangular GaAs quantum-well wires FL Madarasz, F Szmulowicz, FK Hopkins, DL Dorsey
Physical Review B 49 (19), 13528, 1994
64 1994 Ab initio calculation of binding and diffusion of a Ga adatom on the surfaceJG LePage, M Alouani, DL Dorsey, JW Wilkins, PE Blöchl
Physical Review B 58 (3), 1499, 1998
48 1998 Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ...
Journal of Applied Physics 125 (4), 2019
43 2019 Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects JP Jones, E Heller, D Dorsey, S Graham
Microelectronics Reliability 55 (12), 2634-2639, 2015
38 2015 Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors K Maize, E Heller, D Dorsey, A Shakouri
2013 IEEE International Reliability Physics Symposium (IRPS), CD. 2.1-CD. 2.3, 2013
33 2013 Electrical and chemical analysis of Ti/Au contacts to β-Ga2O3 LAM Lyle, TC Back, CT Bowers, AJ Green, KD Chabak, DL Dorsey, ...
APL Materials 9 (6), 2021
28 2021 Compositional analysis of mixed–cation‐anion III–V semiconductor interfaces using phase retrieval high‐resolution transmission electron microscopy K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust
Journal of microscopy 230 (3), 372-381, 2008
25 2008 Heuristic rules for group IV dopant site selection in III–V compounds R Venkatasubramanian, DL Dorsey, K Mahalingam
Journal of crystal growth 175, 224-228, 1997
24 1997 Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage K Maize, E Heller, D Dorsey, A Shakouri
2012 28th Annual IEEE Semiconductor Thermal Measurement and Management …, 2012
22 2012 Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust
Applied physics letters 88 (9), 2006
18 2006 Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs) JP Jones, MR Rosenberger, WP King, R Vetury, E Heller, D Dorsey, ...
Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2014
17 2014 Molecular‐beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study R Venkatasubramanian, DL Dorsey
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
17 1993