| Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm J MacHale, F Meaney, N Kennedy, L Eaton, G Mirabelli, M White, ... Journal of Applied Physics 125 (22), 2019 | 13 | 2019 |
| Monolayer doping of germanium with arsenic: A new chemical route to achieve optimal dopant activation N Kennedy, S Garvey, B Maccioni, L Eaton, M Nolan, R Duffy, F Meaney, ... Langmuir 36 (34), 9993-10002, 2020 | 10 | 2020 |
| Doping of ultra-thin Si films: Combined first-principles calculations and experimental study F Gity, F Meaney, A Curran, PK Hurley, S Fahy, R Duffy, L Ansari Journal of Applied Physics 129 (1), 2021 | 6 | 2021 |
| Doping considerations for finfet, gate-all-around, and nanosheet based devices R Duffy, F Meaney, E Galluccio ECS Transactions 97 (3), 63, 2020 | 2 | 2020 |
| Tertiarybutylarsine damage-free thin-film doping and conformal surface coverage of substrate-released horizontal Si nanowires F Meaney, K Thomas, J MacHale, G Mirabelli, N Kennedy, J Connolly, ... Applied Surface Science 508, 145147, 2020 | 1 | 2020 |
| Conformal and non-destructive doping towards gate-all-around nanowire devices F Meaney University College Cork, 2020 | | 2020 |
| Electrical Evaluation of Ion Implant, Liquid, and Gas Sources for Doping of Ultra-Thin Body SOI and Si Nanowire Structures J MacHale, F Meaney, B Sheehan, R Duffy, N Kennedy, B Long 2018 22nd International Conference on Ion Implantation Technology (IIT), 82-85, 2018 | | 2018 |
