| 14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017 | 248 | 2017 |
| 45nm CMOS-silicon photonics monolithic technology (45CLO) for next-generation, low power and high speed optical interconnects M Rakowski, C Meagher, K Nummy, A Aboketaf, J Ayala, Y Bian, B Harris, ... Optical Fiber Communication Conference, T3H. 3, 2020 | 191 | 2020 |
| Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots F Xiu, Y Wang, J Kim, A Hong, J Tang, AP Jacob, J Zou, KL Wang Nature Materials 9 (4), 337-344, 2010 | 180 | 2010 |
| Scaling challenges for advanced CMOS devices AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor International Journal of High Speed Electronics and Systems 26 (01n02), 1740001, 2017 | 120 | 2017 |
| Performance of magnetic quantum cellular automata and limitations due to thermal noise FM Spedalieri, AP Jacob, DE Nikonov, VP Roychowdhury IEEE Transactions on Nanotechnology 10 (3), 537-546, 2010 | 90 | 2010 |
| Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Nanoelectronics MI Van Der Meulen, N Petkov, MA Morris, O Kazakova, X Han, KL Wang, ... Nano Letters 9 (1), 50-56, 2009 | 85 | 2009 |
| 10 Gbit/s data modulation using 1.3 µm InGaAs quantum dot lasers M Kuntz, G Fiol, M Lämmlin, C Schubert, AR Kovsh, A Jacob, A Umbach, ... Electronics letters 41 (5), 1, 2005 | 77 | 2005 |
| Methods of forming FinFET devices with alternative channel materials WP Maszara, AP Jacob, NV LiCausi, JA Fronheiser, K Akarvardar US Patent 8,673,718, 2014 | 68 | 2014 |
| FINFET technology featuring high mobility SiGe channel for 10nm and beyond D Guo, G Karve, G Tsutsui, KY Lim, R Robison, T Hook, R Vega, D Liu, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 66 | 2016 |
| Towards low-loss monolithic silicon and nitride photonic building blocks in state-of-the-art 300mm CMOS foundry Y Bian, J Ayala, C Meagher, B Peng, M Rakowski, A Jacob, K Nummy, ... Frontiers in Optics, FW5D. 2, 2020 | 65 | 2020 |
| Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices R Xie, WJ Taylor Jr, AP Jacob US Patent 9,318,552, 2016 | 64 | 2016 |
| Integrated display system with multi-color light emitting diodes (LEDs) S Banna, S Jha, D Nayak, AP Jacob US Patent 10,037,981, 2018 | 60 | 2018 |
| Methods of forming low defect replacement fins for a finfet semiconductor device and the resulting devices J Fronheiser, AP Jacob, WP Maszara, K Akarvardar US Patent App. 13/839,998, 2014 | 53 | 2014 |
| Electrical isolation of FinFET active region by selective oxidation of sacrificial layer MK Akarvardar, JA Fronheiser, AP Jacob US Patent 9,716,174, 2017 | 50 | 2017 |
| Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device X Cai, R Xie, K Cheng, A Khakifirooz, AP Jacob, WP Maszara US Patent 9,412,822, 2016 | 50 | 2016 |
| Fin transformation process and isolation structures facilitating different Fin isolation schemes AP Jacob, K Cheng, BB Doris, N Loubet, P Khare, R Divakaruni US Patent 9,349,730, 2016 | 47 | 2016 |
| Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process R Xie, A Knorr, AP Jacob, M Hargrove US Patent 9,147,730, 2015 | 45 | 2015 |
| Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide MK Akarvardar, AP Jacob US Patent 9,385,233, 2016 | 43 | 2016 |
| Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process BJ Pawlak, S Bentley, A Jacob US Patent 8,716,156, 2014 | 43 | 2014 |
| Methods of forming substrates comprised of different semiconductor materials and the resulting device BJ Pawlak, S Bentley, A Jacob US Patent 9,368,578, 2016 | 42 | 2016 |
RUILONG XIEIBMПотвърден имейл адрес: ibm.com
