AlGaN/GaN HEMTs-an overview of device operation and applications UK Mishra, P Parikh, YF Wu
Proceedings of the IEEE 90 (6), 1022-1031, 2002
2262 2002 GaN-based RF power devices and amplifiers UK Mishra, L Shen, TE Kazior, YF Wu
Proceedings of the IEEE 96 (2), 287-305, 2008
1776 2008 The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R Vetury, NQ Zhang, S Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 560-566, 2001
1665 2001 30-W/mm GaN HEMTs by field plate optimization YF Wu, A Saxler, M Moore, RP Smith, S Sheppard, PM Chavarkar, ...
IEEE Electron Device Letters 25 (3), 117-119, 2004
1338 2004 Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors JP Ibbetson, PT Fini, KD Ness, SP DenBaars, JS Speck, UK Mishra
Applied Physics Letters 77 (2), 250-252, 2000
1301 2000 Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements JF Muth, JH Lee, IK Shmagin, RM Kolbas, HC Casey Jr, BP Keller, ...
Applied Physics Letters 71 (18), 2572-2574, 1997
885 1997 Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
859 2018 “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells YH Cho, GH Gainer, AJ Fischer, JJ Song, S Keller, UK Mishra, ...
Applied Physics Letters 73 (10), 1370-1372, 1998
841 1998 Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810-816, 2006
804 * 2006 Very-high power density AlGaN/GaN HEMTs YF Wu, D Kapolnek, JP Ibbetson, P Parikh, BP Keller, UK Mishra
IEEE Transactions on Electron Devices 48 (3), 586-590, 2001
759 2001 Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, CR Elsass, JP Ibbetson, R Vetury, B Heying, P Fini, ...
Journal of applied physics 86 (8), 4520-4526, 1999
569 1999 AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ...
IEEE Electron Device Letters 22 (10), 457-459, 2001
567 2001 Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures SF Chichibu, AC Abare, MS Minsky, S Keller, SB Fleischer, JE Bowers, ...
Applied Physics Letters 73 (14), 2006-2008, 1998
556 1998 High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ...
IEEE Electron device letters 26 (11), 781-783, 2005
555 2005 High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 143502, 2008
514 2008 High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra
IEEE Electron Device Letters 27 (9), 713-715, 2006
509 2006 Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate S Karmalkar, UK Mishra
IEEE transactions on electron devices 48 (8), 1515-1521, 2001
497 2001 Electrical characterization of GaN P Kozodoy, JP Ibbetson, H Marchand, PT Fini, S Keller, JS Speck, ...
Applied physics letters 73 (7), 975-977, 1998
471 1998 AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra
IEEE Electron device letters 27 (1), 13-15, 2005
466 2005 Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition S Heikman, S Keller, SP DenBaars, UK Mishra
Applied Physics Letters 81 (3), 439-441, 2002
463 2002 