| Full integration and reliability evaluation of phase-change RAM based on 0.24/spl mu/m-CMOS technologies YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, JH Oh, HJ Kim, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 350 | 2003 |
| Highly manufacturable high density phase change memory of 64Mb and beyond SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 342 | 2004 |
| Highly reliable 50nm contact cell technology for 256Mb PRAM SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005 | 333 | 2005 |
| Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb SL Cho, JH Yi, YH Ha, BJ Kuh, CM Lee, JH Park, SD Nam, H Horii, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 96-97, 2005 | 317 | 2005 |
| Full integration of highly manufacturable 512Mb PRAM based on 90nm technology JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 316 | 2006 |
| Three-dimensional NAND flash architecture design based on single-crystalline stacked array Y Kim, JG Yun, SH Park, W Kim, JY Seo, M Kang, KC Ryoo, JH Oh, ... IEEE Transactions on Electron Devices 59 (1), 35-45, 2011 | 308 | 2011 |
| Semiconductor devices and methods of driving the same JH Oh, KC Ryoo, B Park, K Oh, IG Baek US Patent 8,472,237, 2013 | 158 | 2013 |
| Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ... US Patent 7,482,616, 2009 | 148 | 2009 |
| Phase changeable memory device and method of formation thereof BO Cho, S Joo, KC Ryoo, KR Byun US Patent 7,419,881, 2008 | 145 | 2008 |
| Writing current reduction for high-density phase-change RAM YN Hwang, SH Lee, SJ Ahn, SY Lee, KC Ryoo, HS Hong, HC Koo, ... IEEE International Electron Devices Meeting 2003, 37.1. 1-37.1. 4, 2003 | 145 | 2003 |
| Full integration and cell characteristics for 64Mb nonvolatile PRAM SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004 | 144 | 2004 |
| Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006 | 123 | 2006 |
| Scaling effect on silicon nitride memristor with highly doped Si substrate S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ... Small 14 (19), 1704062, 2018 | 91 | 2018 |
| Phase change memory devices having dual lower electrodes YJ Song, KC Ryoo, D Lim US Patent 7,696,508, 2010 | 85 | 2010 |
| Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ... Japanese Journal of Applied Physics 44 (4S), 2691, 2005 | 72 | 2005 |
| IEDM Tech. Dig. CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ... IEDM Tech. Dig 2, 2006 | 71 | 2006 |
| Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors YN Hwang, JS Hong, SH Lee, SJ Ahn, GT Jeong, GH Koh, HJ Kim, ... Non-Volatile Semiconductor Memory Workshop, Digest of Technical Papers, US …, 2003 | 54 | 2003 |
| Phase-changeable memory devices having reduced susceptibility to thermal interference KC Ryoo, KO Jong-Woo, YJ Song US Patent 7,977,662, 2011 | 47 | 2011 |
| Highly reliable ring-type contact for high-density phase change memory CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ... Japanese journal of applied physics 45 (4S), 3233, 2006 | 46 | 2006 |
| Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure S Kim, S Cho, KC Ryoo, BG Park Journal of Vacuum Science & Technology B 33 (6), 2015 | 39 | 2015 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityПотвърден имейл адрес: snu.ac.kr
