Следене
Satyaki Ganguly, Ph.D.
Satyaki Ganguly, Ph.D.
Senior Manager (Engineering Science), Wolfspeed, Inc.
Потвърден имейл адрес: alumni.nd.edu
Заглавие
Позовавания
Позовавания
Година
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 2011
1862011
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
D Jena, J Simon, A Wang, Y Cao, K Goodman, J Verma, S Ganguly, G Li, ...
physica status solidi (a) 208 (7), 1511-1516, 2011
1172011
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
782013
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
S Ganguly, A Konar, Z Hu, H Xing, D Jena
Applied Physics Letters 101 (25), 2012
712012
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 2017
642017
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied physics letters 104 (19), 2014
642014
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing
Applied Physics Express 7 (3), 031002, 2014
342014
Optical fault isolation and nanoprobing techniques for the 10 nm technology node and beyond
M von Haartman, S Rahman, S Ganguly, J Verma, A Umair, T Deborde
ISTFA 2015, 52-56, 2015
282015
Improved X-band performance and reliability of a GaN HEMT with sunken source connected field plate design
KM Bothe, S Ganguly, J Guo, Y Liu, A Niyonzima, O Tornblad, J Fisher, ...
IEEE Electron Device Letters 43 (3), 354-357, 2022
272022
Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment
S Ganguly, J Verma, Z Hu, HG Xing, D Jena
Applied Physics Express 7 (3), 034102, 2014
212014
AlGaN/GaN HEMTs on Si by MBE with regrown contacts and fT = 153 GHz
S Ganguly, B Song, WS Hwang, Z Hu, M Zhu, J Verma, H Xing, D Jena
physica status solidi (c) 11 (3‐4), 887-889, 2014
212014
Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies
DA Gajewski, S Ganguly, S Sheppard, S Wood, JB Barner, J Milligan, ...
Microelectronics Reliability 84, 1-6, 2018
202018
Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes
M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ...
Applied Physics Letters 106 (4), 2015
192015
Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts
S Ganguly, J Verma, HG Xing, D Jena
Applied Physics Express 7 (10), 105501, 2014
192014
Gate oxide reliability of SiC MOSFETs and capacitors fabricated on 150mm wafers
DJ Lichtenwalner, S Sabri, E Van Brunt, B Hull, S Ganguly, DA Gajewski, ...
Materials Science Forum 963, 745-748, 2019
172019
Application of on-line Focused Beam Reflectance Measurement Technology in high shear wet granulation
S Ganguly, JZ Gao
The AAPS Journal 7, 2005
122005
Accelerated testing of SiC power devices
DJ Lichtenwalner, S Sabri, E van Brunt, B Hull, SH Ryu, P Steinmann, ...
2020 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2020
112020
A high efficiency, Ka-band, GaN-on-SiC MMIC with low compression
B Schmukler, KM Bothe, S Ganguly, T Alcorn, J Gao, C Hardiman, ...
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
112019
Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation
R Wang, G Li, J Guo, B Song, J Verma, Z Hu, Y Yue, K Nomoto, S Ganguly, S ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 28.6.1-28.6.4, 2013
11*2013
Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region
Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing
72nd Device Research Conference, 27-28, 2014
102014
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