Jae-Phil Shim
Jae-Phil Shim
Потвърден имейл адрес: kist.re.kr
Biomass-derived carbon quantum dots for visible-light-induced photocatalysis and label-free detection of Fe (III) and ascorbic acid
GS Das, JP Shim, A Bhatnagar, KM Tripathi, TY Kim
Scientific reports 9 (1), 15084, 2019
Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display
CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ...
Optics Express 25 (3), 2489-2495, 2017
Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding
CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ...
ACS photonics 5 (11), 4413-4422, 2018
Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
M Choe, CY Cho, JP Shim, W Park, SK Lim, WK Hong, B Hun Lee, ...
Applied Physics Letters 101 (3), 2012
InGaN-based p–i–n solar cells with graphene electrodes
JP Shim, M Choe, SR Jeon, D Seo, T Lee, DS Lee
Applied physics express 4 (5), 052302, 2011
Improved efficiency by using transparent contact layers in InGaN-based pin solar cells
JP Shim, SR Jeon, YK Jeong, DS Lee
IEEE electron device letters 31 (10), 1140-1142, 2010
Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
CM Kang, SJ Kang, SH Mun, SY Choi, JH Min, S Kim, JP Shim, DS Lee
Scientific reports 7 (1), 1-9, 2017
A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs
JP Shim, DH Kim, M Choe, T Lee, SJ Park, DS Lee
Nanotechnology 23 (25), 255201, 2012
Improved photovoltaic effects of a vertical-type InGaN/GaN multiple quantum well solar cell
SY Bae, JP Shim, DS Lee, SR Jeon, G Namkoong
Japanese Journal of Applied Physics 50 (9R), 092301, 2011
Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells
SB Choi, JP Shim, DM Kim, HI Jeong, YD Jho, YH Song, DS Lee
Applied Physics Letters 103 (3), 2013
Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials
SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ...
IEEE Journal of the Electron Devices Society 6, 579-587, 2018
Verification of Ge-on-insulator structure for a mid-infrared photonics platform
SH Kim, JH Han, JP Shim, H Kim, WJ Choi
Optical Materials Express 8 (2), 440-451, 2018
Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films
DJ Seo, JP Shim, SB Choi, TH Seo, EK Suh, DS Lee
Optics express 20 (106), A991-A996, 2012
Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes
JP Shim, T Hoon Seo, JH Min, C Mo Kang, EK Suh, DS Lee
Applied Physics Letters 102 (15), 2013
Light emitting diode and method for manufacturing the same
SY Lee
US Patent 8,404,566, 2013
Fabrication and characterization of Pt/Al2O3/Y2O3/In0. 53Ga0. 47As MOSFETs with low interface trap density
SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ...
Applied Physics Letters 110 (4), 2017
Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs
S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ...
IEEE Journal of the Electron Devices Society 7, 869-877, 2019
Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode
T Hoon Seo, JP Shim, S Jin Chae, GU Shin, B Kyoung Kim, DS Lee, ...
Applied Physics Letters 102 (3), 2013
Fabrication of InGaAs-on-insulator substrates using direct wafer-bonding and epitaxial lift-off techniques
SK Kim, JP Shim, DM Geum, CZ Kim, HS Kim, JD Song, SJ Choi, DH Kim, ...
IEEE Transactions on Electron Devices 64 (9), 3601-3608, 2017
Ag nanoparticles-embedded surface plasmonic InGaN-based solar cells via scattering and localized field enhancement
JP Shim, SB Choi, DJ Kong, DJ Seo, H Kim, DS Lee
Optics express 24 (14), A1176-A1187, 2016
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