Amritesh Rai
Amritesh Rai
Front End Process Integration Engineer @ Intel ▪ UT Austin ▪ Ohio State
Потвърден имейл адрес: utexas.edu - Начална страница
Evidence for moiré excitons in van der Waals heterostructures
K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ...
Nature 567 (7746), 71-75, 2019
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime
HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ...
Advanced Materials 28 (9), 1818-1823, 2016
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2
CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee
Acs Nano 9 (1), 363-370, 2015
Radio frequency transistors and circuits based on CVD MoS2
A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ...
Nano letters 15 (8), 5039-5045, 2015
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee
Crystals 8 (8), 316, 2018
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy
A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ...
Applied Physics Letters 102 (16), 2013
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ...
Applied Physics Letters 106 (6), 2015
Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films
A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee
ACS nano 9 (4), 3772-3779, 2015
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
Activation of a nickel-based oxygen evolution reaction catalyst on a hematite photoanode via incorporation of cerium for photoelectrochemical water oxidation
H Lim, JY Kim, EJ Evans, A Rai, JH Kim, BR Wygant, CB Mullins
ACS applied materials & interfaces 9 (36), 30654-30661, 2017
Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2
Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ...
Advanced Materials 32 (22), 1908311, 2020
Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ...
Nano letters 19 (3), 1976-1981, 2019
Carrier trapping by oxygen impurities in molybdenum diselenide
K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ...
ACS applied materials & interfaces 10 (1), 1125-1131, 2018
Characteristics and mechanism study of cerium oxide based random access memories
CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee
Applied Physics Letters 106 (17), 2015
Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano Letters 16 (8), 4975-4981, 2016
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3
R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ...
Applied Physics Letters 104 (22), 2014
Системата не може да изпълни операцията сега. Опитайте отново по-късно.
Статии 1–20