Amritesh Rai

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2019
Позовавания	3974	3178
h-индекс	25	23
i10-индекс	32	32

620

310

155

465

2014201520162017201820192020202120222023202410 41 162 264 308 387 580 617 583 571 437

Публичен достъп

Преглед на всички

19 статии

5 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Emanuel TutucProfessor, The University of Texas at AustinПотвърден имейл адрес: mer.utexas.edu
Anupam RoyThe University of Texas at AustinПотвърден имейл адрес: austin.utexas.edu
Kyounghwan KimAppleПотвърден имейл адрес: utexas.edu
Rik DeyAssistant Professor, Indian Institute of Technology KanpurПотвърден имейл адрес: iitk.ac.in
Samaresh GuchhaitHoward University, Washington, DCПотвърден имейл адрес: Howard.edu
Leonard F. RegisterProfessor of Electrical and Computer EngineeringПотвърден имейл адрес: austin.utexas.edu
Tanmoy PramanikIIT Roorkee, Intel Corporation, The University of Texas at AustinПотвърден имейл адрес: ece.iitr.ac.in
Sangwoo KangIntel CorporationПотвърден имейл адрес: intel.com
Rudresh (Rudy) GhoshUniversity of Texas at AustinПотвърден имейл адрес: rudyghosh.com
Sushant SondeUT Austin, CNR-IMM, IMECПотвърден имейл адрес: austin.utexas.edu
Kenji WatanabeNational Institute for Materials ScienceПотвърден имейл адрес: nims.go.jp
Deji AkinwandeThe University of Texas at Austin, IEEE, MRS, APS, AAS FellowПотвърден имейл адрес: ece.utexas.edu
Atresh SanneIntel, University of Texas at AustinПотвърден имейл адрес: utexas.edu
T.TaniguchiNational Institute for Materials ScienceПотвърден имейл адрес: nims.go.jp
Maruthi YogeeshDesign Engineer @ Intel, Researcher @ UCBerkeley;Потвърден имейл адрес: berkeley.edu
Amithraj ValsarajCore Compact Modeling, Intel CorporationПотвърден имейл адрес: utexas.edu
Nanshu Lu (鲁南姝), Ph.D.Professor, the University of Texas at AustinПотвърден имейл адрес: utexas.edu
Galan MoodyUniversity of California Santa BarbaraПотвърден имейл адрес: ece.ucsb.edu
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoПотвърден имейл адрес: physics.utexas.edu
Jacob S EmbleyUniversity of Texas at AustinПотвърден имейл адрес: utexas.edu

Следене

Amritesh Rai

Front End Process Integration Engineer @ Intel ▪ UT Austin ▪ Ohio State

Потвърден имейл адрес: utexas.edu - Начална страница

Solid State Electronics Semiconductor Memory Process Integration 2D Nanoelectronics Beyond-CMOS Devices


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019	1267	2019
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	312	2015
Structural and Electrical Properties of MoTe₂ and MoSe₂ Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016	239	2016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015	231	2015
Large‐Area Monolayer MoS2 for Flexible Low‐Power RF Nanoelectronics in the GHz Regime HY Chang, MN Yogeesh, R Ghosh, A Rai, A Sanne, S Yang, N Lu, ... Advanced Materials 28 (9), 1818-1823, 2016	212	2016
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS₂ CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015	204	2015
Radio frequency transistors and circuits based on CVD MoS2 A Sanne, R Ghosh, A Rai, MN Yogeesh, SH Shin, A Sharma, K Jarvis, ... Nano letters 15 (8), 5039-5045, 2015	197	2015
Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018	156	2018
Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017	128	2017
Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si (111)-(7× 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 2013	108	2013
Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates A Sanne, R Ghosh, A Rai, HCP Movva, A Sharma, R Rao, L Mathew, ... Applied Physics Letters 106 (6), 2015	100	2015
Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015	97	2015
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015	65	2015
Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS₂ Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ... Advanced Materials 32 (22), 1908311, 2020	56	2020
Activation of a nickel-based oxygen evolution reaction catalyst on a hematite photoanode via incorporation of cerium for photoelectrochemical water oxidation H Lim, JY Kim, EJ Evans, A Rai, JH Kim, BR Wygant, CB Mullins ACS applied materials & interfaces 9 (36), 30654-30661, 2017	55	2017
Visualization of Local Conductance in MoS₂/WSe₂ Heterostructure Transistors D Wu, W Li, A Rai, X Wu, HCP Movva, MN Yogeesh, Z Chu, SK Banerjee, ... Nano letters 19 (3), 1976-1981, 2019	50	2019
Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018	46	2018
Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 2015	44	2015
Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016	43	2016
Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 2014	42	2014

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