Следене
Chunhao Tu
Chunhao Tu
Потвърден имейл адрес: nctu.edu.tw
Заглавие
Позовавания
Позовавания
Година
Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
TC Chen, TC Chang, CT Tsai, TY Hsieh, SC Chen, CS Lin, MC Hung, ...
Applied Physics Letters 97 (11), 112104, 2010
2002010
Light-induced instability of an InGaZnO thin film transistor with and without passivation layer formed by plasma-enhanced-chemical-vapor-deposition
TC Chen, TC Chang, TY Hsieh, CT Tsai, SC Chen, CS Lin, MC Hung, ...
Applied Physics Letters 97 (19), 192103, 2010
1182010
Light-induced instability of an InGaZnO thin film transistor with and without passivation layer formed by plasma-enhanced-chemical-vapor-deposition
TC Chen, TC Chang, TY Hsieh, CT Tsai, SC Chen, CS Lin, MC Hung, ...
Applied Physics Letters 97 (19), 192103, 2010
1182010
Effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive-bias-temperature-stress operation
SY Huang, TC Chang, MC Chen, SC Chen, CT Tsai, MC Hung, CH Tu, ...
Electrochemical and Solid-State Letters 14 (4), H177, 2011
802011
Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
WR Chen, TC Chang, PT Liu, PS Lin, CH Tu, CY Chang
Applied Physics Letters 90 (11), 112108, 2007
732007
High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure
YC Wu, TC Chang, CY Chang, CS Chen, CH Tu, PT Liu, HW Zan, YH Tai
Applied physics letters 84 (19), 3822-3824, 2004
522004
Improved memory window for Ge nanocrystals embedded in SiON layer
CH Tu, TC Chang, PT Liu, HC Liu, SM Sze, CY Chang
Applied physics letters 89 (16), 162105, 2006
362006
Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
YC Wu, TC Chang, PT Liu, CS Chen, CH Tu, HW Zan, YH Tai, CY Chang
IEEE transactions on electron devices 52 (10), 2343-2346, 2005
302005
Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
WR Chen, TC Chang, PT Liu, JL Yeh, CH Tu, JC Lou, CF Yeh, CY Chang
Applied Physics Letters 91 (8), 082103, 2007
252007
Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
CC Lin, TC Chang, CH Tu, WR Chen, CW Hu, SM Sze, TY Tseng, ...
Applied Physics Letters 93 (22), 222101, 2008
242008
Enhanced performance of poly-Si thin film transistors using fluorine ions implantation
CH Tu, TC Chang, PT Liu, HW Zan, YH Tai, CY Yang, YC Wu, HC Liu, ...
Electrochemical and Solid-State Letters 8 (9), G246, 2005
232005
Improvement of Hydrogenated Amorphous-Silicon TFT Performances With Low-Siloxane-Based Hydrogen Silsesquioxane (HSQ) Passivation Layer
TS Chang, TC Chang, PT Liu, TS Chang, CH Tu, FS Yeh
IEEE electron device letters 27 (11), 902-904, 2006
222006
Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
LW Feng, CY Chang, TC Chang, CH Tu, PS Wang, YF Chang, MC Chen, ...
Applied Physics Letters 95 (26), 262110, 2009
212009
Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer
CH Tu, TC Chang, PT Liu, HC Liu, CC Tsai, LT Chang, TY Tseng, SM Sze, ...
Applied physics letters 89 (5), 052112, 2006
212006
High-performance metal-induced lateral-crystallization polysilicon thin-film transistors with multiple nanowire channels and multiple gates
YC Wu, TC Chang, PT Liu, CW Chou, YC Wu, CH Tu, CY Chang
IEEE transactions on nanotechnology 5 (3), 157-162, 2006
212006
Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors
GW Chang, TC Chang, YE Syu, TM Tsai, KC Chang, CH Tu, FY Jian, ...
Thin Solid Films 520 (5), 1608-1611, 2011
202011
Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC
CH Tu, TC Chang, PT Liu, CY Yang, HC Liu, WR Chen, YC Wu, ...
IEEE electron device letters 27 (4), 262-264, 2006
182006
Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
YC Wu, TC Chang, PT Liu, YC Wu, CW Chou, CH Tu, JC Lou, CY Chang
Applied Physics Letters 87 (14), 143504, 2005
172005
Moisture-induced material instability of porous organosilicate glass
TC Chang, CW Chen, PT Liu, YS Mor, HM Tsai, TM Tsai, ST Yan, CH Tu, ...
Electrochemical and solid-state letters 6 (4), F13, 2003
172003
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
CH Tu, TC Chang, PT Liu, CH Chen, CY Yang, YC Wu, HC Liu, LT Chang, ...
Journal of The Electrochemical Society 153 (9), G815, 2006
162006
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Статии 1–20