| A highly-efficient, concentrating-photovoltaic/thermoelectric hybrid generator TH Kil, S Kim, DH Jeong, DM Geum, S Lee, SJ Jung, S Kim, C Park, ... Nano energy 37, 242-247, 2017 | 89 | 2017 |
| Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications DM Geum, MS Park, JY Lim, HD Yang, JD Song, CZ Kim, E Yoon, SH Kim, ... Scientific reports 6 (1), 20610, 2016 | 78 | 2016 |
| Fabrication of high-quality GaAs-based photodetector arrays on Si SH Kim, DM Geum, MS Park, H Kim, JD Song, WJ Choi Applied Physics Letters 110 (15), 153505, 2017 | 36 | 2017 |
| Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation DM Geum, SK Kim, CM Kang, SH Moon, J Kyhm, JH Han, DS Lee, ... Nanoscale 11 (48), 23139-23148, 2019 | 35 | 2019 |
| Heterogeneous integration toward a monolithic 3-D chip enabled by III–V and Ge materials SH Kim, SK Kim, JP Shim, DM Geum, G Ju, HS Kim, HJ Lim, HR Lim, ... IEEE Journal of the Electron Devices Society 6, 579-587, 2018 | 33 | 2018 |
| Effect of copper surface pre-treatment on the properties of CVD grown graphene MS Kim, JM Woo, DM Geum, JR Rani, JH Jang Aip Advances 4 (12), 127107, 2014 | 33 | 2014 |
| Bioinspired photoresponsive single transistor neuron for a neuromorphic visual system JK Han, DM Geum, MW Lee, JM Yu, SK Kim, S Kim, YK Choi Nano Letters 20 (12), 8781-8788, 2020 | 27 | 2020 |
| GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding SH Kim, DM Geum, MS Park, CZ Kim, WJ Choi Solar Energy Materials and Solar Cells 141, 372-376, 2015 | 27 | 2015 |
| Ultra-lightweight, flexible InGaP/GaAs tandem solar cells with a dual-function encapsulation layer TS Kim, HJ Kim, DM Geum, JH Han, IS Kim, N Hong, GH Ryu, JH Kang, ... ACS Applied Materials & Interfaces 13 (11), 13248-13253, 2021 | 22 | 2021 |
| In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3Buried Oxide SH Kim, DM Geum, MS Park, WJ Choi IEEE Electron Device Letters 36 (5), 451-453, 2015 | 21 | 2015 |
| 3D stackable synaptic transistor for 3D integrated artificial neural networks SK Kim, YJ Jeong, P Bidenko, HR Lim, YR Jeon, H Kim, YJ Lee, ... ACS applied materials & interfaces 12 (6), 7372-7380, 2020 | 18 | 2020 |
| Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems DM Geum, SH Kim, SK Kim, SS Kang, JH Kyhm, J Song, WJ Choi, E Yoon Scientific Reports 9 (1), 18661, 2019 | 18 | 2019 |
| Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density SK Kim, DM Geum, JP Shim, CZ Kim, H Kim, JD Song, WJ Choi, SJ Choi, ... Applied Physics Letters 110 (4), 043501, 2017 | 18 | 2017 |
| Highly stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for monolithic 3-D integration of InGaAs MOSFETs S Kim, SK Kim, S Shin, JH Han, DM Geum, JP Shim, S Lee, H Kim, G Ju, ... IEEE Journal of the Electron Devices Society 7, 869-877, 2019 | 17 | 2019 |
| Fabrication of InGaAs-on-insulator substrates using direct wafer-bonding and epitaxial lift-off techniques SK Kim, JP Shim, DM Geum, CZ Kim, HS Kim, JD Song, SJ Choi, DH Kim, ... IEEE Transactions on Electron Devices 64 (9), 3601-3608, 2017 | 17 | 2017 |
| Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process DM Geum, SK Kim, S Lee, D Lim, HJ Kim, CH Choi, SH Kim IEEE Electron Device Letters 41 (3), 433-436, 2020 | 16 | 2020 |
| Arrayed MoS2–In0.53Ga0.47As van der Waals Heterostructure for High‐Speed and Broadband Detection from Visible to Shortwave‐Infrared Light DM Geum, S Kim, JH Khym, J Lim, SK Kim, SY Ahn, TS Kim, K Kang, ... Small 17 (17), 2007357, 2021 | 15 | 2021 |
| Stackable InGaAs-on-insulator HEMTs for monolithic 3-D integration J Jeong, SK Kim, J Kim, DM Geum, J Park, JH Jang, S Kim IEEE Transactions on Electron Devices 68 (5), 2205-2211, 2021 | 15 | 2021 |
| Photo-responsible synapse using Ge synaptic transistors and GaAs photodetectors SK Kim, DM Geum, HR Lim, JH Han, H Kim, YJ Jeong, SH Kim IEEE Electron Device Letters 41 (4), 605-608, 2020 | 14 | 2020 |
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With … SK Kim, JP Shim, DM Geum, J Kim, CZ Kim, HS Kim, JD Song, SJ Choi, ... IEEE Transactions on Electron Devices 65 (5), 1862-1868, 2018 | 14 | 2018 |
Sanghyeon Kim, S. Kim, S.-H. Kim, S....KAIST, Korea Institute of Science and Technology (KIST), imec, The University of TokyoПотвърден имейл адрес: kaist.ac.kr
