Thomas N. Theis
Thomas N. Theis
Professor in Electrical Engineering, Columbia University
Потвърден имейл адрес: columbia.edu
The end of moore's law: A new beginning for information technology
TN Theis, HSP Wong
Computing in Science & Engineering 19 (2), 41-50, 2017
Electroluminescence studies in silicon dioxide films containing tiny silicon islands
DJ DiMaria, JR Kirtley, EJ Pakulis, DW Dong, TS Kuan, FL Pesavento, ...
Journal of Applied Physics 56 (2), 401-416, 1984
Theory of high-field electron transport in silicon dioxide
MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley
Physical Review B 31 (12), 8124, 1985
It’s time to reinvent the transistor!
TN Theis, PM Solomon
Science 327 (5973), 1600-1601, 2010
In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor
TN Theis, PM Solomon
Proceedings of the IEEE 98 (12), 2005-2014, 2010
The future of interconnection technology
TN Theis
IBM Journal of Research and Development 44 (3), 379-390, 2000
Electron Localization by a Metastable Donor Level in : A New Mechanism Limiting the Free-Carrier Density
TN Theis, PM Mooney, SL Wright
Physical review letters 60 (4), 361, 1988
Electron heating in silicon dioxide and off‐stoichiometric silicon dioxide films
DJ DiMaria, TN Theis, JR Kirtley, FL Pesavento, DW Dong, SD Brorson
Journal of applied physics 57 (4), 1214-1238, 1985
Plasmons in inversion layers
TN Theis
Surface Science 98 (1-3), 515-532, 1980
Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films
DJ DiMaria, DW Dong, C Falcony, TN Theis, JR Kirtley, JC Tsang, ...
Journal of Applied Physics 54 (10), 5801-5827, 1983
Hot-electron picture of light emission from tunnel junctions
JR Kirtley, TN Theis, JC Tsang, DJ DiMaria
Physical Review B 27 (8), 4601, 1983
Two-dimensional magnetoplasmon in the silicon inversion layer
TN Theis, JP Kotthaus, PJ Stiles
Solid State Communications 24 (4), 273-277, 1977
Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content
PM Mooney, TN Theis, SL Wright
Applied physics letters 53 (25), 2546-2548, 1988
Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures
JR Kirtley, TN Theis, PM Mooney, SL Wright
Journal of applied physics 63 (5), 1541-1548, 1988
Light emission from tunnel junctions on gratings
J Kirtley, TN Theis, JC Tsang
Physical Review B 24 (10), 5650, 1981
Surface plasmon polariton contributions to strokes emission from molecular monolayers on periodic Ag surfaces
JC Tsang, JR Kirtley, TN Theis
Solid State Communications 35 (9), 667-670, 1980
Wavevector dependence of the two-dimensional plasmon dispersion relationship in the (100) silicon inversion layer
TN Theis, JP Kotthaus, PJ Stiles
Solid State Communications 26 (9), 603-606, 1978
Diffraction‐grating‐enhanced light emission from tunnel junctions
JR Kirtley, TN Theis, JC Tsang
Applied Physics Letters 37 (5), 435-437, 1980
Strong Electric Field Heating of Conduction-Band Electrons in Si
TN Theis, DJ DiMaria, JR Kirtley, DW Dong
Physical review letters 52 (16), 1445, 1984
Bistability of theDX center in GaAs and AlxGa1-xAs, and experimental tests for negativeU of theDX level
TN Theis, PM Mooney, BD Parker
Journal of electronic materials 20 (1), 35-48, 1991
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