| III-Nitride Semiconductors and their Modern Devices B Gil OUP Oxford, 2013 | 141 | 2013 |
| Influence of GaN substrate off‐cut on properties of InGaN and AlGaN layers M Sarzynski, M Leszczynski, M Krysko, JZ Domagala, R Czernecki, ... Crystal Research and Technology 47 (3), 321-328, 2012 | 48 | 2012 |
| Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ... Applied Physics Letters 95 (26), 2009 | 41 | 2009 |
| The influence of lattice parameter variation on microstructure of GaN single crystals M Krysko, M Sarzynski, J Domagała, I Grzegory, B Łucznik, G Kamler, ... Journal of alloys and compounds 401 (1-2), 261-264, 2005 | 36 | 2005 |
| Elimination of AlGaN epilayer cracking by spatially patterned AlN mask M Sarzyński, M Kryśko, G Targowski, R Czernecki, A Sarzyńska, A Libura, ... Applied physics letters 88 (12), 2006 | 35 | 2006 |
| Lateral control of indium content and wavelength of III–nitride diode lasers by means of GaN substrate patterning M Sarzyński, T Suski, G Staszczak, A Khachapuridze, JZ Domagała, ... Applied Physics Express 5 (2), 021001, 2012 | 30 | 2012 |
| Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, G Targowski, ... Optics Express 24 (9), 9673-9682, 2016 | 27 | 2016 |
| Strain-compensated AlGaN∕ GaN∕ InGaN cladding layers in homoepitaxial nitride devices R Czernecki, S Krukowski, G Targowski, P Prystawko, M Sarzynski, ... Applied Physics Letters 91 (23), 2007 | 20 | 2007 |
| High-power laser structures grown on bulk GaN crystals P Prystawko, R Czernetzki, L Gorczyca, G Targowski, P Wisniewski, ... Journal of crystal growth 272 (1-4), 274-277, 2004 | 19 | 2004 |
| Bulk GaN crystals grown at high pressure as substrates for blue‐laser technology R Czernetzki, M Leszczynski, I Grzegory, P Perlin, P Prystawko, ... physica status solidi (a) 200 (1), 9-12, 2003 | 19 | 2003 |
| 450 nm (Al, In) GaN optical amplifier with double ‘j-shape’waveguide for master oscillator power amplifier systems S Stanczyk, A Kafar, S Grzanka, M Sarzynski, R Mroczynski, S Najda, ... Optics Express 26 (6), 7351-7357, 2018 | 16 | 2018 |
| Low dislocation density, high power InGaN laser diodes P Perlin, M Leszczỹski, P Prystawko, P Wisniewski, R Czernetzki, ... MRS Internet Journal of Nitride Semiconductor Research 9 (1), 3, 2004 | 16 | 2004 |
| InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter A Kafar, S Stanczyk, M Sarzynski, S Grzanka, J Goss, I Makarowa, ... Photonics Research 5 (2), A30-A34, 2017 | 15 | 2017 |
| Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN (0001) systems with patterned substrates JZ Domagała, SL Morelhao, M Sarzyński, M Maździarz, P Dłużewski, ... Journal of Applied Crystallography 49 (3), 798-805, 2016 | 14 | 2016 |
| Fabrication of phase masks with variable diffraction efficiency using HEBS glass technology T Osuch, A Kowalik, Z Jaroszewicz, M Sarzyński Applied Optics 50 (31), 5977-5982, 2011 | 14 | 2011 |
| Monolithic cyan− violet InGaN/GaN LED array PA Dróżdż, M Sarzyński, JZ Domagała, E Grzanka, S Grzanka, ... physica status solidi (a) 214 (8), 1600815, 2017 | 12 | 2017 |
| C‐plane bowing in free standing GaN crystals grown by HVPE on GaN‐sapphire substrates with photolithographically patterned Ti masks B Łucznik, T Sochacki, M Sarzyński, M Kryśko, I Dzięcielewski, I Grzegory, ... physica status solidi c 8 (7‐8), 2117-2119, 2011 | 12 | 2011 |
| Indium incorporation into InGaN quantum wells grown on GaN narrow stripes M Sarzyński, E Grzanka, S Grzanka, G Targowski, R Czernecki, A Reszka, ... Materials 12 (16), 2583, 2019 | 11 | 2019 |
| Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure B Sadovyi, A Nikolenko, JL Weyher, I Grzegory, I Dziecielewski, ... Journal of Crystal Growth 449, 35-42, 2016 | 10 | 2016 |
| Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates P Kruszewski, M Grabowski, P Prystawko, A Nowakowska‐Siwinska, ... physica status solidi (a) 214 (4), 1600376, 2017 | 9 | 2017 |
