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Ruize Sun 孙瑞泽
Ruize Sun 孙瑞泽
Other names孙 瑞泽, Sun Ruize
Univerisity of Electronic Science and Technology of China
Verified email at uestc.edu.cn - Homepage
Title
Cited by
Cited by
Year
GaN power integration for high frequency and high efficiency power applications: A review
R Sun, J Lai, W Chen, B Zhang
IEEE Access 8, 15529-15542, 2020
1262020
Analytical switching loss model for GaN-based control switch and synchronous rectifier in low-voltage buck converters
Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, M Li, J Li, Q Zhou, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
342019
Monolithic integration design of GaN-based power chip including gate driver for high-temperature DC–DC converters
M Cui, Q Bu, Y Cai, R Sun, W Liu, H Wen, S Lam, YC Liang, IZ Mitrovic, ...
Japanese Journal of Applied Physics 58 (5), 056505, 2019
342019
Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters
M Cui, R Sun, Q Bu, W Liu, H Wen, A Li, YC Liang, C Zhao
IEEE Access 7, 184375-184384, 2019
332019
All-GaN power integration: Devices to functional subcircuits and converter ICs
R Sun, YC Liang, YC Yeo, C Zhao, W Chen, B Zhang
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (1), 31-41, 2019
332019
Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure for power switching applications
R Sun, YC Liang, YC Yeo, C Zhao
IEEE Transactions on Electron Devices 64 (8), 3515-3518, 2017
322017
An efficient and reliable solid-state circuit breaker based on mixture device
X Xu, W Chen, C Liu, R Sun, Z Li, B Zhang
IEEE Transactions on Power Electronics 36 (9), 9767-9771, 2021
292021
Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate
Z Wang, J Cao, R Sun, F Wang, Y Yao
Superlattices and Microstructures 120, 753-758, 2018
232018
A behavioral model for MCT surge current analysis in pulse discharge
W Chen, R Sun, K Xiao, H Zhu, C Peng, Z Ruan, J Ruan, B Zhang, Z Li
Solid-state electronics 99, 31-37, 2014
222014
Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion
R Sun, YC Liang, YC Yeo, YH Wang, C Zhao
physica status solidi (a) 214 (3), 1600562, 2017
212017
Simulation study of an ultralow switching loss p-GaN gate HEMT with dynamic charge storage mechanism
F Wang, W Chen, X Xu, R Sun, Z Wang, Y Xia, Y Xin, C Liu, Q Zhou, ...
IEEE Transactions on Electron Devices 68 (1), 175-183, 2020
192020
Development of GaN power IC platform and all GaN DC-DC buck converter IC
R Sun, YC Liang, YC Yeo, C Zhao, W Chen, B Zhang
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
192019
Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors
F Wang, W Chen, X Li, R Sun, X Xu, Y Xin, Z Wang, Y Shi, Y Xia, C Liu, ...
Journal of Physics D: Applied Physics 53 (30), 305106, 2020
182020
Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
Z Wang, W Chen, F Wang, J Cao, R Sun, K Ren, Y Luo, S Guo, Z Wang, ...
Superlattices and Microstructures 117, 330-335, 2018
182018
Realistic trap configuration scheme with fabrication processes in consideration for the simulations of AlGaN/GaN MIS-HEMT devices
R Sun, YC Liang, YC Yeo, YH Wang, C Zhao
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 720-729, 2016
172016
An analytical model on the gate control capability in p-GaN Gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps
F Wang, W Chen, R Sun, Z Wang, Q Zhou, B Zhang
Journal of Physics D: Applied Physics 54 (9), 095107, 2020
162020
High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications
WJ Chen, RZ Sun, CF Peng, B Zhang
Chinese Physics B 23 (7), 077307, 2014
162014
A novel thyristor-based bidirectional SSCB with controllable current breaking capability
X Xu, W Chen, C Liu, R Sun, F Wang, Z Li, B Zhang
IEEE Transactions on Power Electronics 37 (4), 4526-4534, 2021
142021
Electrostatic discharge (ESD) behavior of p-GaN HEMTs
Y Xin, W Chen, R Sun, Y Shi, C Liu, Y Xia, F Wang, X Xu, Q Shi, Y Wang, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
142020
Effect of surface treatment on electrical properties of GaN metal–insulator–semiconductor devices with Al2O3 gate dielectric
Y Cai, W Liu, M Cui, R Sun, YC Liang, H Wen, L Yang, SN Supardan, ...
Japanese Journal of Applied Physics 59 (4), 041001, 2020
132020
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