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Albena Paskaleva
Albena Paskaleva
Prof. Institute of Solid State Physics, Bulgarian Academy of Sciences
Verified email at issp.bas.bg
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Cited by
Cited by
Year
XPS study of N2 annealing effect on thermal Ta2O5 layers on Si
E Atanassova, G Tyuliev, A Paskaleva, D Spassov, K Kostov
Applied surface science 225 (1-4), 86-99, 2004
1282004
Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs
E Atanassova, A Paskaleva
Microelectronics Reliability 47 (6), 913-923, 2007
1172007
Influence of γ radiation on thin Ta2O5–Si structures
E Atanassova, A Paskaleva, R Konakova, D Spassov, VF Mitin
Microelectronics Journal 32 (7), 553-562, 2001
1132001
Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics
V Yanev, M Rommel, M Lemberger, S Petersen, B Amon, T Erlbacher, ...
Applied Physics Letters 92 (25), 2008
972008
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs
E Atanassova, A Paskaleva
Microelectronics Reliability 42 (2), 157-173, 2002
882002
Different current conduction mechanisms through thin high-k films due to the varying Hf to Ti ratio
A Paskaleva, AJ Bauer, M Lemberger, S Zürcher
Journal of applied physics 95 (10), 5583-5590, 2004
832004
Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
E Atanassova, N Novkovski, A Paskaleva, M Pecovska-Gjorgjevich
Solid-State Electronics 46 (11), 1887-1898, 2002
792002
High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties
E Atanassova, M Kalitzova, G Zollo, A Paskaleva, A Peeva, M Georgieva, ...
Thin Solid Films 426 (1-2), 191-199, 2003
702003
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
W Weinreich, A Shariq, K Seidel, J Sundqvist, A Paskaleva, M Lemberger, ...
Journal of Vacuum Science & Technology B 31 (1), 2013
632013
Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si
E Atanassova, D Spassov, A Paskaleva, J Koprinarova, M Georgieva
Microelectronics journal 33 (11), 907-920, 2002
412002
Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition
A Paskaleva, D Spassov, P Terziyska
Journal of Physics: Conference Series 794 (1), 012017, 2017
382017
Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
A Paskaleva, M Rommel, A Hutzler, D Spassov, AJ Bauer
ACS applied materials & interfaces 7 (31), 17032-17043, 2015
382015
Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering
A Paskaleva, E Atanassova, T Dimitrova
Vacuum 58 (2-3), 470-477, 2000
382000
High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity
E Atanassova, M Georgieva, D Spassov, A Paskaleva
Microelectronic engineering 87 (4), 668-676, 2010
352010
Electrical characteristics of Ti-doped Ta2O5 stacked capacitors
E Atanassova, D Spassov, A Paskaleva, M Georgieva, J Koprinarova
Thin Solid Films 516 (23), 8684-8692, 2008
352008
Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors
E Atanassova, D Spassov, A Paskaleva
Microelectronic engineering 83 (10), 1918-1926, 2006
352006
Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode
E Atanassova, A Paskaleva, N Novkovski, M Georgieva
Journal of applied physics 97 (9), 2005
352005
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
M Lemberger, A Paskaleva, S Zürcher, AJ Bauer, L Frey, H Ryssel
Microelectronics Reliability 45 (5-6), 819-822, 2005
342005
Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks
E Atanassova, A Paskaleva, N Novkovski
Microelectronics Reliability 48 (4), 514-525, 2008
332008
Composition of Ta2O5 stacked films on N2O-and NH3-nitrided Si
E Atanassova, D Spassov, A Paskaleva, K Kostov
Applied Surface Science 253 (5), 2841-2851, 2006
332006
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