| XPS study of N2 annealing effect on thermal Ta2O5 layers on Si E Atanassova, G Tyuliev, A Paskaleva, D Spassov, K Kostov Applied surface science 225 (1-4), 86-99, 2004 | 126 | 2004 |
| Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs E Atanassova, A Paskaleva Microelectronics Reliability 47 (6), 913-923, 2007 | 117 | 2007 |
| Influence of γ radiation on thin Ta2O5–Si structures E Atanassova, A Paskaleva, R Konakova, D Spassov, VF Mitin Microelectronics Journal 32 (7), 553-562, 2001 | 112 | 2001 |
| Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics V Yanev, M Rommel, M Lemberger, S Petersen, B Amon, T Erlbacher, ... Applied Physics Letters 92 (25), 2008 | 95 | 2008 |
| Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs E Atanassova, A Paskaleva Microelectronics Reliability 42 (2), 157-173, 2002 | 88 | 2002 |
| Different current conduction mechanisms through thin high-k films due to the varying Hf to Ti ratio A Paskaleva, AJ Bauer, M Lemberger, S Zürcher Journal of applied physics 95 (10), 5583-5590, 2004 | 83 | 2004 |
| Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si E Atanassova, N Novkovski, A Paskaleva, M Pecovska-Gjorgjevich Solid-State Electronics 46 (11), 1887-1898, 2002 | 79 | 2002 |
| High temperature-induced crystallization in tantalum pentoxide layers and its influence on the electrical properties E Atanassova, M Kalitzova, G Zollo, A Paskaleva, A Peeva, M Georgieva, ... Thin Solid Films 426 (1-2), 191-199, 2003 | 69 | 2003 |
| Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes W Weinreich, A Shariq, K Seidel, J Sundqvist, A Paskaleva, M Lemberger, ... Journal of Vacuum Science & Technology B 31 (1), 2013 | 60 | 2013 |
| Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si E Atanassova, D Spassov, A Paskaleva, J Koprinarova, M Georgieva Microelectronics journal 33 (11), 907-920, 2002 | 41 | 2002 |
| Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering A Paskaleva, E Atanassova, T Dimitrova Vacuum 58 (2-3), 470-477, 2000 | 38 | 2000 |
| Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping A Paskaleva, M Rommel, A Hutzler, D Spassov, AJ Bauer ACS applied materials & interfaces 7 (31), 17032-17043, 2015 | 37 | 2015 |
| Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition A Paskaleva, D Spassov, P Terziyska Journal of Physics: Conference Series 794 (1), 012017, 2017 | 36 | 2017 |
| Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors E Atanassova, D Spassov, A Paskaleva Microelectronic engineering 83 (10), 1918-1926, 2006 | 36 | 2006 |
| Electrical characteristics of Ti-doped Ta2O5 stacked capacitors E Atanassova, D Spassov, A Paskaleva, M Georgieva, J Koprinarova Thin Solid Films 516 (23), 8684-8692, 2008 | 35 | 2008 |
| Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode E Atanassova, A Paskaleva, N Novkovski, M Georgieva Journal of applied physics 97 (9), 2005 | 35 | 2005 |
| High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity E Atanassova, M Georgieva, D Spassov, A Paskaleva Microelectronic engineering 87 (4), 668-676, 2010 | 34 | 2010 |
| Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor M Lemberger, A Paskaleva, S Zürcher, AJ Bauer, L Frey, H Ryssel Microelectronics Reliability 45 (5-6), 819-822, 2005 | 34 | 2005 |
| Composition of Ta2O5 stacked films on N2O-and NH3-nitrided Si E Atanassova, D Spassov, A Paskaleva, K Kostov Applied Surface Science 253 (5), 2841-2851, 2006 | 33 | 2006 |
| Constant current stress of Ti-doped Ta2O5 on nitrided Si A Paskaleva, E Atanassova, N Novkovski Journal of Physics D: Applied Physics 42 (2), 025105, 2008 | 32 | 2008 |
