Brian M. McSkimming

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2019
Позовавания	665	310
h-индекс	14	12
i10-индекс	15	14

201120122013201420152016201720182019202020212022202320247 20 24 50 67 76 49 58 74 53 74 46 47 16

Публичен достъп

Преглед на всички

4 статии

2 статии

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Jim SpeckProfessor of Materials, UCSBПотвърден имейл адрес: ucsb.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityПотвърден имейл адрес: osu.edu
Steven RingelThe Ohio State UniversityПотвърден имейл адрес: osu.edu
Christine M. JacksonDepartment of Electrical and Computer Engineering, The Ohio State UniveristyПотвърден имейл адрес: osu.edu
Emre ÇİNKILIÇAssistant Professor, Hakkari UniversityПотвърден имейл адрес: hakkari.edu.tr
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityПотвърден имейл адрес: vanderbilt.edu
Varistha ChobpattanaFaculty of Engineering, Rajamangala University of Technology Thanyaburi (RMUTT)Потвърден имейл адрес: en.rmutt.ac.th
Junwoo SonSeoul National UniversityПотвърден имейл адрес: snu.ac.kr
Christophe HurniFacebookПотвърден имейл адрес: engr.ucsb.edu
Jordan R. LangStaff Scientist, Solar JunctionПотвърден имейл адрес: sj-solar.com
Erin C. YoungUniversity of California, Santa BarbaraПотвърден имейл адрес: engineering.ucsb.edu
Umesh MishraUCSBПотвърден имейл адрес: ece.ucsb.edu
Marco AbbarchiMaître de conférences NSE, IM2NP (CNRS), University Aix-Marseille 3, Campus St Jérôme, 13397Потвърден имейл адрес: im2np.fr
Kazuaki SakodaNational Institute for Materials Science, Photonic Materials Unit, DirectorПотвърден имейл адрес: nims.go.jp
Takashi KurodaNIMSПотвърден имейл адрес: nims.go.jp
Takaaki Mano国立研究開発法人物質・材料研究機構　主幹研究員Потвърден имейл адрес: nims.go.jp
Esmat FarzanaAssistant Professor, Electrical and Computer Engineering, Iowa State UniversityПотвърден имейл адрес: iastate.edu
Jim X. ChenProfessor of Computer Science, George Mason UniversityПотвърден имейл адрес: gmu.edu
Christopher J. K. RichardsonUniversity of MarylandПотвърден имейл адрес: lps.umd.edu

Следене

Brian M. McSkimming

The University of Oklahoma

Потвърден имейл адрес: ou.edu - Начална страница

Engineering Education Computing Education Learning Sciences III-Nitride Materials/Devices Semiconductor Growth


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
Self-assembly of symmetric GaAs quantum dots on (111) A substrates: Suppression of fine-structure splitting T Mano, M Abbarchi, T Kuroda, B McSkimming, A Ohtake, K Mitsuishi, ... Applied physics express 3 (6), 065203, 2010	112	2010
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures J Son, V Chobpattana, BM McSkimming, S Stemmer Applied Physics Letters 101 (10), 2012	80	2012
Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 103 (4), 2013	77	2013
Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies CM Jackson, AR Arehart, E Cinkilic, B McSkimming, JS Speck, SA Ringel Journal of Applied Physics 113 (20), 2013	63	2013
pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ... Applied Physics Letters 97 (22), 2010	58	2010
Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 µm/h BM McSkimming, F Wu, T Huault, C Chaix, JS Speck Journal of Crystal Growth 386, 168-174, 2014	38	2014
High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy BM McSkimming, C Chaix, JS Speck Journal of Vacuum Science & Technology A 33 (5), 2015	36	2015
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ... Journal of Applied Physics 118 (15), 2015	34	2015
Metamorphic growth of relaxed single crystalline aluminum on silicon (111) BM McSkimming, A Alexander, MH Samuels, B Arey, I Arslan, ... Journal of Vacuum Science & Technology A 35 (2), 2017	25	2017
Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy H Okumura, BM McSkimming, T Huault, C Chaix, JS Speck Applied Physics Letters 104 (1), 2014	25	2014
Correlation of a generation-recombination center with a deep level trap in GaN XS Nguyen, K Lin, Z Zhang, B McSkimming, AR Arehart, JS Speck, ... Applied Physics Letters 106 (10), 2015	23	2015
Direct Determination of Energy Band Alignments of Ni/Al₂O₃/GaN MOS Structures Using Internal Photoemission Spectroscopy Z Zhang, CM Jackson, AR Arehart, B McSkimming, JS Speck, SA Ringel Journal of electronic materials 43, 828-832, 2014	21	2014
In-situ nitrogen plasma passivation of Al2O3/GaN interface states J Son, V Chobpattana, BM McSkimming, S Stemmer Journal of Vacuum Science & Technology A 33 (2), 2015	20	2015
Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride K Galiano, JI Deitz, SD Carnevale, DA Gleason, PK Paul, Z Zhang, ... Journal of Applied Physics 123 (22), 2018	16	2018
Impact of surface treatment on interface states of ALD Al2O3/GaN interfaces CM Jackson, AR Arehart, TJ Grassman, B McSkimming, JS Speck, ... ECS Journal of Solid State Science and Technology 6 (8), P489, 2017	12	2017
Investigating the usage of Likert-style items within Computer Science Education Research Instruments BM McSkimming, S Mackay, A Decker 2021 IEEE Frontiers in Education Conference (FIE), 1-8, 2021	8	2021
Green: a flexible UML class diagramming tool for Eclipse G Wang, B McSkimming, Z Marzec, J Gardner, A Decker, C Alphonce Companion to the 22nd ACM SIGPLAN conference on Object-oriented programming …, 2007	6	2007
Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7× 7 and surfaces A Alexander, BM McSkimming, B Arey, I Arslan, CJK Richardson Journal of Materials Research 32 (21), 4067-4075, 2017	5	2017
Seed layer free nanoporous metal deposition for bonding JM Goward, BM McSkimming, CAM Fabien, SJ Holmes US Patent 10,566,214, 2020	2	2020
High Active Nitrogen Flux Growth of (Indium) Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy BM McSkimming University of California, Santa Barbara, 2015	2	2015

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