30-nm InAs PHEMTs With DH Kim, JA del Alamo
Electron Device Letters, IEEE 31 (8), 806-808, 2010
230 * 2010 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo
IEEE Electron Device Letters 29 (8), 830-833, 2008
215 2008 fT= 688 GHz and fmax= 800 GHz in Lg= 40 nm In0. 7Ga0. 3As MHEMTs with gm_max> 2.7 mS/μm DH Kim, B Brar, JA del Alamo
IEDM Tech. Dig, 319-322, 2011
138 2011 Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors HS Kang, CS Choi, WY Choi, DH Kim, KS Seo
Applied physics letters 84 (19), 3780-3782, 2004
122 2004 Lateral and Vertical Scaling of DH Kim, JA Del Alamo
IEEE transactions on electron devices 55 (10), 2546-2553, 2008
110 2008 Logic Suitability of 50-nm DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE transactions on electron devices 54 (10), 2606-2613, 2007
92 2007 30 nm E-mode InAs PHEMTs for THz and future logic applications DH Kim, JA del Alamo
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
87 2008 A self-aligned InGaAs HEMT architecture for logic applications N Waldron, DH Kim, JA Del Alamo
IEEE Transactions on Electron Devices 57 (1), 297-304, 2009
85 2009 Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications DH Kim, JA Del Alamo
IEEE transactions on electron devices 57 (7), 1504-1511, 2010
84 2010 Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
83 * 2005 Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs DH Kim, JA Del Alamo, DA Antoniadis, B Brar
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
77 2009 Logic performance of 40 nm InAs HEMTs DH Kim, JA Del Alamo
2007 IEEE International Electron Devices Meeting, 629-632, 2007
74 2007 50-nm E-mode In0.7 Ga0.3 As PHEMTs on 100-mm InP substrate with fmax > 1 THz DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar
2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010
69 2010 InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
62 2013 L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ...
Applied Physics Letters 104 (16), 2014
61 2014 Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
60 2019 Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems CS Choi, HS Kang, WY Choi, DH Kim, KS Seo
IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005
59 2005 Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
55 2009 Ultra-wideband (from DC to 110 GHz) CPW to CPS transition S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam
Electronics Letters 38 (13), 622-623, 2002
54 2002 Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
53 2013 
Tae-Woo KimUniversity of UlsanПотвърден имейл адрес: ulsan.ac.kr
