30-nm InAs PHEMTs With DH Kim, JA del Alamo
Electron Device Letters, IEEE 31 (8), 806-808, 2010
230 * 2010 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo
IEEE Electron Device Letters 29 (8), 830-833, 2008
210 2008 fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7 Ga0.3 As MHEMTs with gm_max > 2.7 mS/µm DH Kim, B Brar, JA del Alamo
2011 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2011
143 2011 Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors HS Kang, CS Choi, WY Choi, DH Kim, KS Seo
Applied physics letters 84 (19), 3780-3782, 2004
114 2004 Lateral and Vertical Scaling of DH Kim, JA Del Alamo
IEEE transactions on electron devices 55 (10), 2546-2553, 2008
111 2008 L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ...
Applied Physics Letters 104 (16), 2014
100 2014 IEEE Photonics Technol. Lett HK Choi, HS Kang, WY Choi, HJ Kim, WJ Choi, DH Kim, KC Jang, KS Seo
IEEE Photonics Technol. Lett 15, 1330-1332, 2003
92 2003 30 nm E-mode InAs PHEMTs for THz and future logic applications DH Kim, JA del Alamo
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
86 2008 Logic Suitability of 50-nm DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE transactions on electron devices 54 (10), 2606-2613, 2007
84 2007 A self-aligned InGaAs HEMT architecture for logic applications N Waldron, DH Kim, JA Del Alamo
IEEE Transactions on Electron Devices 57 (1), 297-304, 2009
83 2009 Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
83 * 2005 Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications DH Kim, JA Del Alamo
IEEE transactions on electron devices 57 (7), 1504-1511, 2010
82 2010 Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs DH Kim, JA Del Alamo, DA Antoniadis, B Brar
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
78 2009 Logic performance of 40 nm InAs HEMTs DH Kim, JA Del Alamo
2007 IEEE International Electron Devices Meeting, 629-632, 2007
74 2007 50-nm E-mode In0.7 Ga0.3 As PHEMTs on 100-mm InP substrate with fmax > 1 THz DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar
2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010
65 2010 InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
60 2013 Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems CS Choi, HS Kang, WY Choi, DH Kim, KS Seo
IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005
59 2005 Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
53 2019 Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
53 2009 Ultra-wideband (from DC to 110 GHz) CPW to CPS transition S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam
Electronics Letters 38 (13), 622-623, 2002
53 2002 
Tae-Woo KimUniversity of UlsanПотвърден имейл адрес: ulsan.ac.kr
