Следене
Dae-Hyun KIM
Dae-Hyun KIM
Associate Professor, College of IT Engineering, School of Electronics Engineering, Semiconductor
Потвърден имейл адрес: ee.knu.ac.kr - Начална страница
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Позовавания
Позовавания
Година
30-nm InAs PHEMTs With and
DH Kim, JA del Alamo
Electron Device Letters, IEEE 31 (8), 806-808, 2010
229*2010
30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz
DH Kim, JA Del Alamo
IEEE Electron Device Letters 29 (8), 830-833, 2008
2162008
fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
DH Kim, B Brar, JA del Alamo
2011 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2011
1472011
Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors
HS Kang, CS Choi, WY Choi, DH Kim, KS Seo
Applied physics letters 84 (19), 3780-3782, 2004
1222004
IEEE Photonics Technol. Lett
HK Choi, HS Kang, WY Choi, HJ Kim, WJ Choi, DH Kim, KC Jang, KS Seo
IEEE Photonics Technol. Lett 15, 1330-1332, 2003
1122003
Lateral and Vertical Scaling ofHEMTs for Post-Si-CMOS Logic Applications
DH Kim, JA Del Alamo
IEEE transactions on electron devices 55 (10), 2546-2553, 2008
1102008
Logic Suitability of 50-nmHEMTs for Beyond-CMOS Applications
DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE transactions on electron devices 54 (10), 2606-2613, 2007
922007
L {sub g}= 100 nm In {sub 0.7} Ga {sub 0.3} As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer
HM Kwon, D Veksler, D Gilmer, PD Kirsch, DH Kim, TW Hudnall, ...
Applied Physics Letters 104 (16), 2014
872014
A self-aligned InGaAs HEMT architecture for logic applications
N Waldron, DH Kim, JA Del Alamo
IEEE Transactions on Electron Devices 57 (1), 297-304, 2009
872009
30 nm E-mode InAs PHEMTs for THz and future logic applications
DH Kim, JA del Alamo
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
862008
Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications
DH Kim, JA Del Alamo
IEEE transactions on electron devices 57 (7), 1504-1511, 2010
832010
Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications
DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
83*2005
Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs
DH Kim, JA Del Alamo, DA Antoniadis, B Brar
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
772009
Logic performance of 40 nm InAs HEMTs
DH Kim, JA Del Alamo
2007 IEEE International Electron Devices Meeting, 629-632, 2007
752007
50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax> 1 THz
DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar
2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010
722010
InGaAs MOSFETs for CMOS: Recent advances in process technology
JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
622013
Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition
MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
592019
Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems
CS Choi, HS Kang, WY Choi, DH Kim, KS Seo
IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005
592005
Quantum capacitance in scaled down III–V FETs
D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
552009
Ultra-wideband (from DC to 110 GHz) CPW to CPS transition
S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam
Electronics Letters 38 (13), 622-623, 2002
552002
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Статии 1–20