30-nm InAs PHEMTs With DH Kim, JA del Alamo
Electron Device Letters, IEEE 31 (8), 806-808, 2010
220 * 2010 30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz DH Kim, JA Del Alamo
IEEE Electron Device Letters 29 (8), 830-833, 2008
205 2008 fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7 Ga0.3 As MHEMTs with gm_max > 2.7 mS/µm DH Kim, B Brar, JA del Alamo
2011 International Electron Devices Meeting, 13.6. 1-13.6. 4, 2011
135 2011 Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors HS Kang, CS Choi, WY Choi, DH Kim, KS Seo
Applied physics letters 84 (19), 3780-3782, 2004
111 2004 Lateral and Vertical Scaling of DH Kim, JA Del Alamo
IEEE transactions on electron devices 55 (10), 2546-2553, 2008
109 2008 30 nm E-mode InAs PHEMTs for THz and future logic applications DH Kim, JA del Alamo
Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008
86 2008 Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
84 * 2005 A self-aligned InGaAs HEMT architecture for logic applications N Waldron, DH Kim, JA Del Alamo
IEEE Transactions on Electron Devices 57 (1), 297-304, 2009
83 2009 Scalability of sub-100 nm InAs HEMTs on InP substrate for future logic applications DH Kim, JA Del Alamo
IEEE transactions on electron devices 57 (7), 1504-1511, 2010
80 2010 Logic Suitability of 50-nm DH Kim, JA Del Alamo, JH Lee, KS Seo
IEEE transactions on electron devices 54 (10), 2606-2613, 2007
80 2007 Logic performance of 40 nm InAs HEMTs DH Kim, JA Del Alamo
2007 IEEE International Electron Devices Meeting, 629-632, 2007
75 2007 Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs DH Kim, JA Del Alamo, DA Antoniadis, B Brar
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
71 2009 50-nm E-mode In0.7 Ga0.3 As PHEMTs on 100-mm InP substrate with fmax > 1 THz DH Kim, JA del Alamo, P Chen, W Ha, M Urteaga, B Brar
2010 International Electron Devices Meeting, 30.6. 1-30.6. 4, 2010
63 2010 InGaAs MOSFETs for CMOS: Recent advances in process technology JA Del Alamo, D Antoniadis, A Guo, DH Kim, TW Kim, J Lin, W Lu, A Vardi, ...
2013 IEEE International Electron Devices Meeting, 2.1. 1-2.1. 4, 2013
59 2013 Phototransistors based on InP HEMTs and their applications to millimeter-wave radio-on-fiber systems CS Choi, HS Kang, WY Choi, DH Kim, KS Seo
IEEE transactions on microwave theory and techniques 53 (1), 256-263, 2005
59 2005 Positive bias instability and recovery in InGaAs channel nMOSFETs S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
53 2013 Ultra-wideband (from DC to 110 GHz) CPW to CPS transition S Kim, S Jeong, YT Lee, DH Kim, JS Lim, KS Seo, S Nam
Electronics Letters 38 (13), 622-623, 2002
52 2002 Quantum capacitance in scaled down III–V FETs D Jin, D Kim, T Kim, JA del Alamo
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
50 2009 Scaling behavior of In0. 7Ga0. 3As HEMTs for logic DH Kim, JA del Alamo
2006 International Electron Devices Meeting, 1-4, 2006
49 * 2006 Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition MM Rahman, JG Kim, DH Kim, TW Kim
Micromachines 10 (6), 361, 2019
43 2019 
Tae-Woo KimUniversity of UlsanПотвърден имейл адрес: ulsan.ac.kr
