Babak Fallahazad

Получаване на мой собствен потребителски профил

Позовавания

	Всички	От 2020
Позовавания	6006	2992
h-индекс	23	20
i10-индекс	26	22

660

330

165

495

20112012201320142015201620172018201920202021202220232024202528 55 100 261 346 479 504 631 579 636 644 579 527 528 76

Публичен достъп

Преглед на всички

11 статии

1 статия

налични

неналични

Въз основа на изисквания при финансирането

Съавтори

Emanuel TutucProfessor, The University of Texas at AustinПотвърден имейл адрес: mer.utexas.edu
Kyounghwan KimAppleПотвърден имейл адрес: utexas.edu
Stefano LarentisFA Engineer @ NXP SemiconductorsПотвърден имейл адрес: utexas.edu
Kayoung LeeKAISTПотвърден имейл адрес: kaist.ac.kr
Sangwoo KangIntel CorporationПотвърден имейл адрес: intel.com
Luigi ColomboUniversity of Texas at DallasПотвърден имейл адрес: utdallas.edu
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoПотвърден имейл адрес: physics.utexas.edu
Yufeng HaoProfessor of Materials Science and Engineering, Nanjing UniversityПотвърден имейл адрес: nju.edu.cn
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Потвърден имейл адрес: unist.ac.kr
Seyoung KimPOSTECHПотвърден имейл адрес: postech.ac.kr
Oki GunawanResearch Staff Member IBM, Princeton UniversityПотвърден имейл адрес: us.ibm.com
Supratik GuhaUniversity of Chicago and Argonne National LaboratoryПотвърден имейл адрес: uchicago.edu
Insun JoIntel Corporation, Princeton University, The University of Texas at AustinПотвърден имейл адрес: utexas.edu
chen, ray t.Keys and Joan Curry/Cullen Trust Endowed Chair Professor, UT Austin; MURI Center Director, FounderПотвърден имейл адрес: ece.utexas.edu
Amir HosseiniInfinera, University of Texas at Austin, Rice UniversityПотвърден имейл адрес: utexas.edu
David KwongUniversity of Texas at AustinПотвърден имейл адрес: utexas.edu
Hongki MinProfessor, Department of Physics, Seoul National UniversityПотвърден имейл адрес: snu.ac.kr
Junghyo NahProfessor, Dept. of Electrical Engineering, Chungnam National UniversityПотвърден имейл адрес: cnu.ac.kr
En-Shao LiuUniversity of Texas at AustinПотвърден имейл адрес: mail.utexas.edu

Следене

Babak Fallahazad

Intel Corporation

Потвърден имейл адрес: intel.com

CMOS Technology


Заглавие Сортиране по цитати Сортиране по година Сортиране по заглавие	Позовавания Позовавания	Година
The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013	1309	2013
van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016	757	2016
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 2012	665	2012
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017	563	2017
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	325	2015
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical review letters 116 (8), 086601, 2016	218	2016
Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015	203	2015
Chemical potential and quantum Hall ferromagnetism in bilayer graphene K Lee, B Fallahazad, J Xue, DC Dillen, K Kim, T Taniguchi, K Watanabe, ... Science 345 (6192), 58-61, 2014	187	2014
Band Alignment in WSe₂–Graphene Heterostructures K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ... ACS nano 9 (4), 4527-4532, 2015	185	2015
Band Offset and Negative Compressibility in Graphene-MoS₂ Heterostructures S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ... Nano letters 14 (4), 2039-2045, 2014	177	2014
Direct measurement of the Fermi energy in graphene using a double-layer heterostructure S Kim, I Jo, DC Dillen, DA Ferrer, B Fallahazad, Z Yao, SK Banerjee, ... Physical review letters 108 (11), 116404, 2012	143	2012
Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ... ACS nano 11 (5), 4832-4839, 2017	140	2017
Scaling of Al2O3 dielectric for graphene field-effect transistors B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ... Applied Physics Letters 100 (9), 2012	140	2012
Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric B Fallahazad, S Kim, L Colombo, E Tutuc Applied Physics Letters 97 (12), 2010	135	2010
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ... Physical review letters 118 (24), 247701, 2017	124	2017
Experimental demonstration of phase modulation and motion sensing using graphene-integrated metasurfaces N Dabidian, S Dutta-Gupta, I Kholmanov, K Lai, F Lu, J Lee, M Jin, ... Nano Letters 16 (6), 3607-3615, 2016	117	2016
High performance wire‐array silicon solar cells O Gunawan, K Wang, B Fallahazad, Y Zhang, E Tutuc, S Guha Progress in Photovoltaics: Research and Applications 19 (3), 307-312, 2011	111	2011
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ... Physical Review B 97 (20), 201407, 2018	109	2018
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe₂ Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017	72	2017
Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... Electron Device Letters 36 (4), 405 - 407, 2015	67	2015

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