Следене
Giuseppe Carlo Tettamanzi
Giuseppe Carlo Tettamanzi
giuseppe.tettamanzi@adelaide.edu.au
Потвърден имейл адрес: adelaide.edu.au
Заглавие
Позовавания
Позовавания
Година
An accurate single-electron pump based on a highly tunable silicon quantum dot
A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ...
Nano letters 14 (6), 3405-3411, 2014
862014
Few electron limit of n-type metal oxide semiconductor single electron transistors
E Prati, M De Michielis, M Belli, S Cocco, M Fanciulli, D Kotekar-Patil, ...
Nanotechnology 23 (21), 215204, 2012
822012
Magnetic-field probing of an SU (4) Kondo resonance in a single-atom transistor
GC Tettamanzi, J Verduijn, GP Lansbergen, M Blaauboer, MJ Calderón, ...
Physical review letters 108 (4), 046803, 2012
682012
Tunable Kondo effect in a single donor atom
GP Lansbergen, GC Tettamanzi, J Verduijn, N Collaert, S Biesemans, ...
Nano letters 10 (2), 455-460, 2010
562010
Charge pumping through a single donor atom
GC Tettamanzi, R Wacquez, S Rogge
New Journal of Physics 16 (6), 063036, 2014
522014
Probing the spin states of a single acceptor atom
J Van der Heijden, J Salfi, JA Mol, J Verduijn, GC Tettamanzi, ...
Nano letters 14 (3), 1492-1496, 2014
472014
Wave function control over a single donor atom
J Verduijn, GC Tettamanzi, S Rogge
Nano letters 13 (4), 1476-1480, 2013
432013
Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
R Rahman, GP Lansbergen, J Verduijn, GC Tettamanzi, SH Park, ...
Physical Review B 84 (11), 115428, 2011
402011
Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation
BC Johnson, GC Tettamanzi, ADC Alves, S Thompson, C Yang, ...
Applied Physics Letters 96 (26), 264102, 2010
402010
Heterointerface effects on the charging energy of the shallow D− ground state in silicon: Role of dielectric mismatch
MJ Calderón, J Verduijn, GP Lansbergen, GC Tettamanzi, S Rogge, ...
Physical Review B 82 (7), 075317, 2010
382010
Lifetime-enhanced transport in silicon due to spin and valley blockade
GP Lansbergen, R Rahman, J Verduijn, GC Tettamanzi, N Collaert, ...
Physical Review Letters 107 (13), 136602, 2011
352011
Superconducting transition in Nb nanowires fabricated using focused ion beam
GC Tettamanzi, CI Pakes, A Potenza, S Rubanov, CH Marrows, S Prawer
Nanotechnology 20 (46), 465302, 2009
262009
Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm
R Wacquez, M Vinet, M Pierre, B Roche, X Jehl, O Cueto, J Verduijn, ...
2010 Symposium on VLSI Technology, 193-194, 2010
242010
Probing the quantum states of a single atom transistor at microwave frequencies
GC Tettamanzi, SJ Hile, MG House, M Fuechsle, S Rogge, MY Simmons
ACS nano 11 (3), 2444-2451, 2017
222017
Thermionic emission as a tool to study transport in undoped nFinFETs
GC Tettamanzi, A Paul, GP Lansbergen, J Verduijn, S Lee, N Collaert, ...
IEEE electron device letters 31 (2), 150-152, 2009
172009
Coherent transport through a double donor system in silicon
J Verduijn, GC Tettamanzi, GP Lansbergen, N Collaert, S Biesemans, ...
Applied Physics Letters 96 (7), 072110, 2010
152010
Interface trap density metrology of state-of-the-art undoped Si n-FinFETs
GC Tettamanzi, A Paul, S Lee, SR Mehrotra, N Collaert, S Biesemans, ...
IEEE Electron Device Letters 32 (4), 440-442, 2011
132011
Stimulation and repair of peripheral nerves using bioadhesive graft‐antenna
A Sliow, Z Ma, G Gargiulo, D Mahns, D Mawad, P Breen, M Stoodley, ...
Advanced Science 6 (11), 1801212, 2019
122019
Gigahertz single-electron pumping mediated by parasitic states
A Rossi, J Klochan, J Timoshenko, FE Hudson, M Möttönen, S Rogge, ...
Nano letters 18 (7), 4141-4147, 2018
112018
Mass production of silicon MOS-SETs: Can we live with nano-devices’ variability?
X Jehl, B Roche, M Sanquer, B Voisin, R Wacquez, V Deshpande, ...
Procedia Computer Science 7, 266-268, 2011
102011
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