| Field effective band alignment and optical gain in type-I Al0. 45Ga0. 55As/GaAs0. 84P0. 16 nano-heterostructures HK Nirmal, SG Anjum, P Lal, A Rathi, S Dalela, MJ Siddiqui, PA Alvi Optik 127 (18), 7274-7282, 2016 | 34 | 2016 |
| Anisotropy and optical gain improvement in type-II In0. 3Ga0. 7As/GaAs0. 4Sb0. 6 nano-scale heterostructure under external uniaxial strain AK Singh, M Riyaj, SG Anjum, N Yadav, A Rathi, MJ Siddiqui, PA Alvi Superlattices and Microstructures 98, 406-415, 2016 | 30 | 2016 |
| Investigation of high optical gain in complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure for MIR applications N Yadav, G Bhardwaj, SG Anjum, S Dalela, MJ Siddiqui, PA Alvi Applied optics 56 (15), 4243-4249, 2017 | 23 | 2017 |
| Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure G Bhardwaj, N Yadav, SG Anjum, MJ Siddiqui, PA Alvi Optik 146, 8-16, 2017 | 19 | 2017 |
| Performance analysis of AC and DC characteristics of AlGaN/GaN HEMT at various temperatures AB Khan, M Sharma, MJ Siddiqui, SG Anjum Transactions on Electrical and Electronic Materials 19 (2), 90-95, 2018 | 7 | 2018 |
| Investigation of optical response in type-II InAs/AlSb nano-scale heterostructure: A novel dual structure SG Anjum, N Yadav, HK Nirmal, M Sharma, MJ Siddiqui, PA Alvi Materials Today: Proceedings 5 (1), 1691-1695, 2018 | 7 | 2018 |
| Effect of Barrier Layer Thickness on AlGaN/GaN Double Gate MOS-HEMT Device Performance for High-Frequency Application AB Khan, SG Anjum, MJ Siddiqui Journal of Nanoelectronics and Optoelectronics 13 (1), 20-26, 2018 | 6 | 2018 |
| Multiple quantum well based lasing nanostructures: A review SG Anjum, MJ Siddiqui IMPACT-2013, 278-282, 2013 | 5 | 2013 |
| Influence Of Back Barrier Layer Thickness On Device Performance Of AlGaN/GaN MOS-HEMT A B Khan, M Sharma, S G Anjum, M J Siddiqui Advanced Materials Proceedings 3 (7), 480-484, 2018 | 4* | 2018 |
| Comparative study of single and double quantum well AlGaN/GaN HEMT structures for high power GHz frequency application AB Khan, MJ Siddiqui, SG Anjum Materials Today: Proceedings 4 (9), 10341-10345, 2017 | 4 | 2017 |
| Effect of barriers length and doping concentration on GaAs/AlGaAs RTD MM Singh, MJ Siddiqui, AB Khan, SG Anjum 2015 Annual IEEE India Conference (INDICON), 1-5, 2015 | 4 | 2015 |
| Effects of variation of quantum well numbers on gain characteristics of type-I InGaAsP/InP nano-heterostructure SG Anjum, K Sandhya, AB Khan, AM Khan, MJ Siddiqui, PA Alvi Bulletin of Electrical Engineering and Informatics 6 (3), 301-310, 2017 | 3 | 2017 |
| Optical Characteristics of Type-II InGaAs/GaAsSb QW Heterostructure under Electric Field SG Anjum, N Yadav, MJ Siddiqui, PA Alvi International Conference on Fibre Optics and Photonics, Th3A. 87, 2016 | 3 | 2016 |
| Quantum Well Width Effect on Intraband Optical Absorption in Type-II InAs/AlSb Nano-Scale Heterostructure N Yadav, G Bhardwaj, SG Anjum, K Sandhya, MJ Siddiqui, PA Alvi Optical and Wireless Technologies, 191-197, 2018 | 2 | 2018 |
| Investigation of material gain of InGaAs/InGaAsP/InP lasing heterostructure SG Anjum, MJ Siddiqui, AB Khan, MM Singh 2016 International Conference on Microelectronics, Computing and …, 2016 | 2 | 2016 |
| Analysis of optical gain characteristics of type-I InGaAsN/GaAs (dilute N) based lasing nano-heterostructure SG Anjum, AB Khan, MJ Siddiqui, PA Alvi International Conference on Nanomaterials and Nanotechnology, 1-3, 2018 | 1 | 2018 |
| 2D Simulation Study of DC and RF Characteristics of Double Heterostructure AlGaN/GaN DG-HEMT Device for High-Frequency Application AB Khan, M Sharma, SG Anjum, MJ Siddiqui Materials Focus 6 (5), 531-538, 2017 | 1 | 2017 |
| Simulation Study of Various Layers and Double δ-Doping Effect on Device Performance of InAlAs/InGaAs/InP HEMT AB Khan, SG Anjum, MJ Siddiqui Journal of New Technology and Materials 277 (5619), 1-7, 2017 | 1 | 2017 |
| Examine and Interpreting the RF and DC Characteristics of AlGaN/GaN HEMT and MOS-HEMT AB Khan, M Sharma, MJ Siddiqui, SG Anjum Advanced Science, Engineering and Medicine 9 (4), 282-286, 2017 | 1 | 2017 |
| Experimental Investigation on Wi-Fi Signal Loss by Scattering Property of Duranta Plant Leaves KA Khan, SG Anjum, MN Faruque, DD Geyesa Electrical and Electronic Devices, Circuits, and Materials: Technological …, 2021 | | 2021 |
Mohammad Jawaid SiddiquiProfessor amu aligarhПотвърден имейл адрес: amu.ac.in
