Следене
Jen-Inn Chyi
Jen-Inn Chyi
Потвърден имейл адрес: ee.ncu.edu.tw
Заглавие
Позовавания
Позовавания
Година
Resonant cavity-enhanced (RCE) photodetectors
K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc
IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991
4731991
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities
WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu
Physical review letters 96 (11), 117401, 2006
3622006
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ...
Applied Physics Letters 77 (19), 2988-2990, 2000
3052000
Light emitting diode element and method for fabricating the same
HC Lin, CM Lee, JI Chyi
US Patent 8,101,447, 2012
2492012
quantum-dot infrared photodetector with operating temperature up to 260 K
L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
1842003
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi
Applied physics letters 81 (9), 1729-1731, 2002
1802002
Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy
JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc
Applied physics letters 53 (12), 1092-1094, 1988
1441988
metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
1432000
enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
1372004
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
1322001
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi
Journal of Applied Physics 92 (8), 4441-4448, 2002
1312002
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
1272002
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi
Physical Review B 62 (11), 6959, 2000
1222000
High voltage GaN schottky rectifiers
GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
1202000
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
CC Chuo, CM Lee, JI Chyi
Applied Physics Letters 78 (3), 314-316, 2001
1162001
Comparison of GaN pin and Schottky rectifier performance
AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ...
IEEE Transactions on Electron Devices 48 (3), 407-411, 2001
1152001
Vertical and lateral GaN rectifiers on free-standing GaN substrates
AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
Applied Physics Letters 79 (10), 1555-1557, 2001
1072001
Mechanism of luminescence in InGaN/GaN multiple quantum wells
HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi
Applied Physics Letters 76 (25), 3712-3714, 2000
1052000
Molecular beam epitaxial growth and characterization of InSb on Si
JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ...
Applied physics letters 54 (11), 1016-1018, 1989
1031989
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi
Applied Physics Letters 76 (6), 691-693, 2000
1022000
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Статии 1–20