Resonant cavity-enhanced (RCE) photodetectors K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc
IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991
467 1991 Efficient Single-Photon Sources Based on Low-Density Quantum Dots<? format?> in Photonic-Crystal Nanocavities WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu
Physical review letters 96 (11), 117401, 2006
380 2006 Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ...
Applied Physics Letters 77 (19), 2988-2990, 2000
302 2000 Light emitting diode element and method for fabricating the same HC Lin, CM Lee, JI Chyi
US Patent 8,101,447, 2012
253 2012 Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi
Physical Review B 62 (11), 6959, 2000
209 2000 L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
183 2003 AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi
Applied physics letters 81 (9), 1729-1731, 2002
178 2002 Growth of InSb and InAs1−x Sbx JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc
Applied physics letters 53 (12), 1092-1094, 1988
143 1988 JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
142 2000 Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
136 2004 GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
133 2001 Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi
Journal of Applied Physics 92 (8), 4441-4448, 2002
131 2002 Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
127 2002 High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
119 2000 Comparison of GaN pin and Schottky rectifier performance AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ...
IEEE Transactions on Electron Devices 48 (3), 407-411, 2001
117 2001 Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells CC Chuo, CM Lee, JI Chyi
Applied Physics Letters 78 (3), 314-316, 2001
116 2001 Vertical and lateral GaN rectifiers on free-standing GaN substrates AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
Applied Physics Letters 79 (10), 1555-1557, 2001
106 2001 Mechanism of luminescence in InGaN/GaN multiple quantum wells HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi
Applied Physics Letters 76 (25), 3712-3714, 2000
106 2000 Molecular beam epitaxial growth and characterization of InSb on Si JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ...
Applied physics letters 54 (11), 1016-1018, 1989
104 1989 Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi
Applied Physics Letters 76 (6), 691-693, 2000
102 2000 
Fan RenUniversity of Florida, Bell Lab, AT&TПотвърден имейл адрес: che.ufl.edu
