Jen-Inn Chyi
Jen-Inn Chyi
Потвърден имейл адрес: ee.ncu.edu.tw
Resonant cavity-enhanced (RCE) photodetectors
K Kishino, MS Unlu, JI Chyi, J Reed, L Arsenault, H Morkoc
IEEE Journal of Quantum Electronics 27 (8), 2025-2034, 1991
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities
WH Chang, WY Chen, HS Chang, TP Hsieh, JI Chyi, TM Hsu
Physical review letters 96 (11), 117401, 2006
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng, CC Liao, CC Yang, CC Chou, ...
Applied Physics Letters 77 (19), 2988-2990, 2000
Light emitting diode element and method for fabricating the same
HC Lin, CM Lee, JI Chyi
US Patent 8,101,447, 2012
quantum-dot infrared photodetector with operating temperature up to 260 K
L Jiang, SS Li, NT Yeh, JI Chyi, CE Ross, KS Jones
Applied physics letters 82 (12), 1986-1988, 2003
AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy
A Kikuchi, R Bannai, K Kishino, CM Lee, JI Chyi
Applied physics letters 81 (9), 1729-1731, 2002
Growth of InSb and InAs1−xSbx on GaAs by molecular beam epitaxy
JI Chyi, S Kalem, NS Kumar, CW Litton, H Morkoc
Applied physics letters 53 (12), 1092-1094, 1988
metal-oxide-semiconductor field-effect transistor
JW Johnson, B Luo, F Ren, BP Gila, W Krishnamoorthy, CR Abernathy, ...
Applied Physics Letters 77 (20), 3230-3232, 2000
enhancement mode metal-oxide semiconductor field-effect transistors
Y Irokawa, Y Nakano, M Ishiko, T Kachi, J Kim, F Ren, BP Gila, ...
Applied physics letters 84 (15), 2919-2921, 2004
GaN electronics for high power, high temperature applications
SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ...
Materials Science and Engineering: B 82 (1-3), 227-231, 2001
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
SW Feng, YC Cheng, YY Chung, CC Yang, YS Lin, C Hsu, KJ Ma, JI Chyi
Journal of Applied Physics 92 (8), 4441-4448, 2002
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
JW Johnson, AP Zhang, WB Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
IEEE Transactions on Electron devices 49 (1), 32-36, 2002
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
WH Chang, TM Hsu, CC Huang, SL Hsu, CY Lai, NT Yeh, TE Nee, JI Chyi
Physical Review B 62 (11), 6959, 2000
High voltage GaN schottky rectifiers
GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ...
IEEE Transactions on Electron Devices 47 (4), 692-696, 2000
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
CC Chuo, CM Lee, JI Chyi
Applied Physics Letters 78 (3), 314-316, 2001
Comparison of GaN pin and Schottky rectifier performance
AP Zhan, GT Dang, F Ren, H Cho, KP Lee, SJ Pearton, JI Chyi, TY Nee, ...
IEEE Transactions on Electron Devices 48 (3), 407-411, 2001
Vertical and lateral GaN rectifiers on free-standing GaN substrates
AP Zhang, JW Johnson, B Luo, F Ren, SJ Pearton, SS Park, YJ Park, ...
Applied Physics Letters 79 (10), 1555-1557, 2001
Mechanism of luminescence in InGaN/GaN multiple quantum wells
HC Yang, PF Kuo, TY Lin, YF Chen, KH Chen, LC Chen, JI Chyi
Applied Physics Letters 76 (25), 3712-3714, 2000
Molecular beam epitaxial growth and characterization of InSb on Si
JI Chyi, D Biswas, SV Iyer, NS Kumar, H Morkoc, R Bean, K Zanio, ...
Applied physics letters 54 (11), 1016-1018, 1989
Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing
TM Hsu, YS Lan, WH Chang, NT Yeh, JI Chyi
Applied Physics Letters 76 (6), 691-693, 2000
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