Co-designing electronics with microfluidics for more sustainable cooling R Van Erp, R Soleimanzadeh, L Nela, G Kampitsis, E Matioli
Nature 585 (7824), 211-216, 2020
327 2020 High-brightness polarized light-emitting diodes E Matioli, S Brinkley, KM Kelchner, YL Hu, S Nakamura, S DenBaars, ...
Light: Science & Applications 1 (8), e22-e22, 2012
290 2012 Tri-gate normally-off GaN power MISFET B Lu, E Matioli, T Palacios
IEEE Electron Device Letters 33 (3), 360-362, 2012
250 2012 High internal and external quantum efficiency InGaN/GaN solar cells E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 021102, 2011
248 2011 Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ...
Applied physics letters 93 (10), 103502, 2008
192 2008 Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs E Matioli, C Weisbuch
Journal of Physics D: Applied Physics 43 (35), 354005, 2010
139 2010 GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 181101, 2021
129 2021 High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch
Applied physics letters 96 (3), 031108, 2010
120 2010 Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal TA Truong, LM Campos, E Matioli, I Meinel, CJ Hawker, C Weisbuch, ...
Applied Physics Letters 94 (2), 023101, 2009
99 2009 High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck
Applied Physics Letters 98 (13), 131115, 2011
80 2011 GaN-on-Si quasi-vertical power MOSFETs C Liu, RA Khadar, E Matioli
IEEE Electron Device Letters 39 (1), 71-74, 2017
79 2017 Fully vertical GaN-on-Si power MOSFETs RA Khadar, C Liu, R Soleimanzadeh, E Matioli
IEEE Electron Device Letters 40 (3), 443-446, 2019
77 2019 High performance tri-gate GaN power MOSHEMTs on silicon substrate J Ma, E Matioli
IEEE Electron Device Letters 38 (3), 367-370, 2017
76 2017 Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes E Rangel, E Matioli, YS Choi, C Weisbuch, JS Speck, EL Hu
Applied physics letters 98 (8), 081104, 2011
74 2011 GaN light-emitting diodes with Archimedean lattice photonic crystals A David, T Fujii, E Matioli, R Sharma, S Nakamura, SP DenBaars, ...
Applied Physics Letters 88 (7), 073510, 2006
73 2006 820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2 RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli
IEEE Electron Device Letters 39 (3), 401-404, 2018
67 2018 CdSe nanorods dominate photocurrent of hybrid CdSe− P3HT photovoltaic cell M Schierhorn, SW Boettcher, JH Peet, E Matioli, GC Bazan, GD Stucky, ...
Acs Nano 4 (10), 6132-6136, 2010
64 2010 Ultralow leakage current AlGaN/GaN Schottky diodes with 3-D anode structure E Matioli, B Lu, T Palacios
IEEE transactions on electron devices 60 (10), 3365-3370, 2013
62 2013 Slanted tri-gates for high-voltage GaN power devices J Ma, E Matioli
IEEE Electron Device Letters 38 (9), 1305-1308, 2017
61 2017 A David, B Moran, K McGroddy, E Matioli, EL Hu, SP DenBaars, ...
Applied physics letters 92 (11), 113514, 2008
60 2008 
claude weisbuchПотвърден имейл адрес: engineering.ucsb.edu
