Следене
Elison Matioli
Elison Matioli
Потвърден имейл адрес: epfl.ch - Начална страница
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Позовавания
Година
Co-designing electronics with microfluidics for more sustainable cooling
R Van Erp, R Soleimanzadeh, L Nela, G Kampitsis, E Matioli
Nature 585 (7824), 211-216, 2020
5432020
High-brightness polarized light-emitting diodes
E Matioli, S Brinkley, KM Kelchner, YL Hu, S Nakamura, S DenBaars, ...
Light: Science & Applications 1 (8), e22-e22, 2012
3082012
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
3042021
High internal and external quantum efficiency InGaN/GaN solar cells
E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 2011
2642011
Tri-gate normally-off GaN power MISFET
B Lu, E Matioli, T Palacios
IEEE Electron Device Letters 33 (3), 360-362, 2012
2622012
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ...
Applied physics letters 93 (10), 2008
240*2008
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
E Matioli, C Weisbuch
Journal of Physics D: Applied Physics 43 (35), 354005, 2010
1442010
High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch
Applied physics letters 96 (3), 2010
1202010
Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
TA Truong, LM Campos, E Matioli, I Meinel, CJ Hawker, C Weisbuch, ...
Applied Physics Letters 94 (2), 2009
1032009
Fully vertical GaN-on-Si power MOSFETs
RA Khadar, C Liu, R Soleimanzadeh, E Matioli
IEEE Electron Device Letters 40 (3), 443-446, 2019
962019
GaN-on-Si quasi-vertical power MOSFETs
C Liu, RA Khadar, E Matioli
IEEE Electron Device Letters 39 (1), 71-74, 2017
932017
High performance tri-gate GaN power MOSHEMTs on silicon substrate
J Ma, E Matioli
IEEE Electron Device Letters 38 (3), 367-370, 2017
862017
High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy
JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck
Applied Physics Letters 98 (13), 2011
852011
Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
E Rangel, E Matioli, YS Choi, C Weisbuch, JS Speck, EL Hu
Applied physics letters 98 (8), 2011
792011
Comparison of wide-band-gap technologies for soft-switching losses at high frequencies
A Jafari, MS Nikoo, N Perera, HK Yildirim, F Karakaya, R Soleimanzadeh, ...
IEEE Transactions on Power Electronics 35 (12), 12595-12600, 2020
762020
820-V GaN-on-Si quasi-vertical pin diodes with BFOM of 2.0 GW/cm2
RA Khadar, C Liu, L Zhang, P Xiang, K Cheng, E Matioli
IEEE Electron Device Letters 39 (3), 401-404, 2018
762018
GaN light-emitting diodes with Archimedean lattice photonic crystals
A David, T Fujii, E Matioli, R Sharma, S Nakamura, SP DenBaars, ...
Applied Physics Letters 88 (7), 2006
752006
Nanoplasma-enabled picosecond switches for ultrafast electronics
M Samizadeh Nikoo, A Jafari, N Perera, M Zhu, G Santoruvo, E Matioli
Nature 579 (7800), 534-539, 2020
742020
Slanted tri-gates for high-voltage GaN power devices
J Ma, E Matioli
IEEE Electron Device Letters 38 (9), 1305-1308, 2017
692017
Enhanced DAB for efficiency preservation using adjustable-tap high-frequency transformer
A Jafari, MS Nikoo, F Karakaya, E Matioli
IEEE Transactions on Power Electronics 35 (7), 6673-6677, 2019
672019
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