Increased photoluminescence of strain-reduced, high-Sn composition Ge1− x x R Chen, H Lin, Y Huo, C Hitzman, TI Kamins, JS Harris
Applied physics letters 99 (18), 181125, 2011
319 2011 Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy Y Huo, H Lin, R Chen, M Makarova, Y Rong, M Li, TI Kamins, J Vuckovic, ...
Applied Physics Letters 98 (1), 011111, 2011
175 2011 Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 100 (10), 102109-102109-4, 2012
143 2012 GeSn technology: Extending the Ge electronics roadmap S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
2011 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2011
125 2011 Raman study of strained Ge1−x Snx alloys H Lin, R Chen, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 98 (26), 261917, 2011
117 2011 Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser B Dutt, H Lin, D Sukhdeo, B Vulovic, S Gupta, D Nam, K Saraswat, ...
IEEE, 0
93 Structural and optical characterization of Six Ge1−x − y Sny alloys grown by molecular beam epitaxy H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
Applied Physics Letters 100 (14), 141908, 2012
51 2012 Low-temperature growth of Ge1− xSnx thin films with strain control by molecular beam epitaxy H Lin, R Chen, Y Huo, TI Kamins, JS Harris
Thin Solid Films 520 (11), 3927-3930, 2012
32 2012 Electromodulation spectroscopy of direct optical transitions in Ge1−x Snx layers under hydrostatic pressure and built-in strain F Dybała, K Żelazna, H Maczko, M Gladysiewicz, J Misiewicz, ...
Journal of Applied Physics 119 (21), 215703, 2016
27 2016 X-ray diffraction analysis of step-graded InxGa1− xAs buffer layers grown by molecular beam epitaxy H Lin, Y Huo, Y Rong, R Chen, TI Kamins, JS Harris
Journal of crystal growth 323 (1), 17-20, 2011
23 2011 MBE growth of tensile-strained Ge quantum wells and quantum dots Y Huo, H Lin, R Chen, Y Rong, TI Kamins, JS Harris
Frontiers of Optoelectronics 5, 112-116, 2012
18 2012 Fabrication and Analysis of Epitaxially Grown Ge S Cho, R Chen, S Koo, G Shambat, H Lin, N Park, J Vuckovic, TI Kamins, ...
IEEE Photonics Technology Letters 23 (20), 1535-1537, 2011
18 2011 GROWTH AND CHARACTERIZATION OF GeSn AND SiGeSn ALLOYS FOR OPTICAL INTERCONNECTS H Lin
STANFORD UNIVERSITY, 2012
9 2012 Electron Devices Meeting (IEDM), 2011 IEEE International S Gupta, R Chen, B Magyari-Kope, H Lin, B Yang, A Nainani, Y Nishi, ...
IEEE, 2011
6 2011 MBE growth of GeSn and SiGeSn heterojunctions for photonic devices JS Harris, H Lin, R Chen, Y Huo, E Fei, S Paik, S Cho, T Kamins
ECS Transactions 50 (9), 601, 2013
4 2013 Efficient luminescence in highly tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, M Li, R Chen, TI Kamins, J Vuckovic, ...
2009 6th IEEE International Conference on Group IV Photonics, 265-267, 2009
4 2009 MBE growth of high Sn-percentage GeSn alloys with a composition-dependent absorption-edge shift Y Huo, R Chen, H Lin, TI Kamins, JS Harris
7th IEEE International Conference on Group IV Photonics, 344-346, 2010
3 2010 Direct band gap tensile-strained germanium Y Huo, H Lin, Y Rong, M Makarova, TI Kamins, J Vuckovic, JS Harris
Conference on Lasers and Electro-Optics, CPDB7, 2009
3 2009 Gene Technology S Gupta
1 2011 Optical properties of Ge1−z Snz / Six Ge1−x−y Sny heterostructures H Lin, R Chen, W Lu, Y Huo, TI Kamins, JS Harris
IEEE Photonics Conference 2012, 919-920, 2012
2012 
Robert ChenStanford UniversityПотвърден имейл адрес: stanford.edu
