Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe V Bougrov, ME Levinshtein, SL Rumyantsev, A Zubrilov, MS Shur Eds. Levinshtein ME, Rumyantsev SL, Shur MS, John Wiley & Sons, Inc., New …, 2001 | 813 | 2001 |
Gallium OXIDE: Properties and applica 498 a review S Stepanov, V Nikolaev, V Bougrov, A Romanov Rev. Adv. Mater. Sci 44, 63-86, 2016 | 804 | 2016 |
Epitaxial growth of (2 01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy VI Nikolaev, AI Pechnikov, SI Stepanov, IP Nikitina, AN Smirnov, ... Materials Science in Semiconductor Processing 47, 16-19, 2016 | 66 | 2016 |
Growth and characterization of β-Ga2O3 crystals VI Nikolaev, V Maslov, SI Stepanov, AI Pechnikov, V Krymov, IP Nikitina, ... Journal of Crystal Growth 457, 132-136, 2017 | 62 | 2017 |
Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition S Suihkonen, T Lang, O Svensk, J Sormunen, PT Törmä, M Sopanen, ... Journal of crystal growth 300 (2), 324-329, 2007 | 48 | 2007 |
Gallium Nitride (GaN) V Bougrov, M Levinshtein, S Rumyantsev, A Zubrilov Properties of Advanced Semiconductor Materials, GaN, AlN, InN, BN, SiC, SiGe, 2001 | 46 | 2001 |
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs PT Törmä, O Svensk, M Ali, S Suihkonen, M Sopanen, MA Odnoblyudov, ... Journal of Crystal Growth 310 (23), 5162-5165, 2008 | 45 | 2008 |
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S Stepanov, WN Wang, BS Yavich, V Bougrov, YT Rebane, YG Shreter Materials Research Society Internet Journal of Nitride Semiconductor …, 2001 | 41 | 2001 |
Light emitting diode with charge asymmetric resonance tunneling YT Rebane, YG Shreter, BS Yavich, VE Bougrov, SI Stepanov, WN Wang physica status solidi (a) 180 (1), 121-126, 2000 | 39 | 2000 |
Effect of growth conditions on electrical properties of Mg-doped p-GaN O Svensk, S Suihkonen, T Lang, H Lipsanen, M Sopanen, ... Journal of crystal growth 298, 811-814, 2007 | 36 | 2007 |
Non-equilibrium grain boundaries with excess energy in graphene AE Romanov, AL Kolesnikova, TS Orlova, I Hussainova, VE Bougrov, ... Carbon 81, 223-231, 2015 | 33 | 2015 |
Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer O Svensk, PT Törmä, S Suihkonen, M Ali, H Lipsanen, M Sopanen, ... Journal of Crystal Growth 310 (23), 5154-5157, 2008 | 32 | 2008 |
Optical confinement and threshold currents in III–V nitride heterostructures: Simulation VE Bougrov, AS Zubrilov Journal of applied physics 81 (7), 2952-2956, 1997 | 32 | 1997 |
Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers T Lang, MA Odnoblyudov, VE Bougrov, AE Romanov, S Suihkonen, ... physica status solidi (a) 203 (10), R76-R78, 2006 | 31 | 2006 |
The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency S Suihkonen, O Svensk, T Lang, H Lipsanen, MA Odnoblyudov, ... Journal of crystal growth 298, 740-743, 2007 | 29 | 2007 |
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique T Lang, M Odnoblyudov, V Bougrov, S Suihkonen, M Sopanen, ... Journal of crystal growth 292 (1), 26-32, 2006 | 29 | 2006 |
High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range AV Babichev, VV Dudelev, AG Gladyshev, DA Mikhailov, AS Kurochkin, ... Technical Physics Letters 45, 735-738, 2019 | 28 | 2019 |
Threading dislocation density reduction in two‐stage growth of GaN layers VE Bougrov, MA Odnoblyudov, AE Romanov, T Lang, OV Konstantinov physica status solidi (a) 203 (4), R25-R27, 2006 | 28 | 2006 |
Degradation and transient currents in III-nitride LEDs YT Rebane, NI Bochkareva, VE Bougrov, DV Tarkhin, YG Shreter, ... Light-Emitting Diodes: Research, Manufacturing, and Applications VII 4996 …, 2003 | 27 | 2003 |
3D laser nano-printing on fibre paves the way for super-focusing of multimode laser radiation GS Sokolovskii, V Melissinaki, KA Fedorova, VV Dudelev, SN Losev, ... Scientific Reports 8 (1), 14618, 2018 | 26 | 2018 |