Markus Reusch
Markus Reusch
Robert Bosch GmbH
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Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements
M Bivour, M Reusch, S Schröer, F Feldmann, J Temmler, H Steinkemper, ...
IEEE Journal of Photovoltaics 4 (2), 566-574, 2014
Fill factor limitation of silicon heterojunction solar cells by junction recombination
M Reusch, M Bivour, M Hermle, SW Glunz
Energy Procedia 38, 297-304, 2013
Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ...
APL Materials 6 (7), 076105, 2018
Surface morphology and microstructure of pulsed DC magnetron sputtered piezoelectric AlN and AlScN thin films
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, L Kirste, V Lebedev, ...
physica status solidi (a) 215 (9), 1700559, 2018
Decoupling charge carrier collection and metallization geometry of back-contacted back-junction silicon solar cells by using insulating thin films
C Reichel, M Reusch, F Granek, M Hermle, SW Glunz
2010 35th IEEE Photovoltaic Specialists Conference, 001034-001038, 2010
Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices
M Reusch, S Cherneva, Y Lu, A Žukauskaitė, L Kirste, K Holc, M Datcheva, ...
Applied Surface Science 407, 307-314, 2017
Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices
M Reusch, K Holc, W Pletschen, L Kirste, A Žukauskaitė, T Yoshikawa, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2016
Requirements for carrier selective silicon heterojunctions
M Bivour, M Reusch, F Feldmann, M Hermle, S Glunz
Proc. 24th Workshop Crystalline Silicon Sol. Cells Modules, Mater. Processes …, 2014
Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films
N Kurz, Y Lu, L Kirste, M Reusch, A Žukauskaitė, V Lebedev, O Ambacher
physica status solidi (a) 215 (13), 1700831, 2018
Insulating and passivating plasma-enhanced atomic layer deposited aluminum oxide thin films for silicon solar cells
C Reichel, M Reusch, S Kotula, F Granek, A Richter, M Hermle, SW Glunz
Thin Solid Films 656, 53-60, 2018
Piezoelectric characterization of Sc0. 26Al0. 74N layers on Si (001) substrates
MS Lozano, A Pérez-Campos, M Reusch, L Kirste, T Fuchs, ...
Materials Research Express 5 (3), 036407, 2018
Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers
T Yoshikawa, M Reusch, K Holc, D Iankov, V Zuerbig, A Zukauskaite, ...
Applied Physics Letters 108 (17), 171903, 2016
IEEE J. Photovoltaics 4, 566 (2014)
M Bivour, M Reusch, S Schroer, F Feldmann, J Temmler, H Steinkemper, ...
Electrostatic self-assembly of diamond nanoparticles onto Al-and N-polar sputtered aluminum nitride surfaces
T Yoshikawa, M Reusch, V Zuerbig, V Cimalla, KH Lee, M Kurzyp, ...
Nanomaterials 6 (11), 217, 2016
APL Mater. 6, 076105 (2018)
Y Lu, M Reusch, N Kurz, A Ding, T Christoph, M Prescher, L Kirste, ...
Flexural plate wave sensors with buried IDT for sensing in liquids
M Reusch, K Holc, A Žukauskaitė, V Lebedev, N Kurz, O Ambacher
2017 IEEE SENSORS, 1-3, 2017
Piezoelectric AlN films for FPW sensors with improved device performance
M Reusch, K Holc, L Kirste, P Katus, L Reindl, O Ambacher, V Lebedev
Procedia Engineering 168, 1040-1043, 2016
Aluminium nitride membranes with embedded buried idt electrodes for novel flexural plate wave devices
M Reusch, P Katus, K Holc, W Pletschen, L Kirste, V Zuerbig, D Iankov, ...
2015 Transducers-2015 18th International Conference on Solid-State Sensors …, 2015
Investigation of temperature characteristics and substrate influence on AlScN-based SAW resonators
A Ding, M Reusch, Y Lu, N Kurz, R Lozar, T Christoph, R Driad, ...
2018 IEEE International Ultrasonics Symposium (IUS), 1-9, 2018
Temperature cross-sensitivity of AlN-based flexural plate wave sensors
M Reusch, K Holc, V Lebedev, N Kurz, A Žukauskaitė, O Ambacher
IEEE Sensors Journal 18 (19), 7810-7818, 2018
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