Следене
Fei Xue
Fei Xue
Intel
Потвърден имейл адрес: utexas.edu
Заглавие
Позовавания
Позовавания
Година
InGaAs tunneling field-effect-transistors with atomic-layer-deposited gate oxides
H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee
IEEE Transactions on Electron Devices 58 (9), 2990-2995, 2011
1082011
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043709, 2014
1032014
Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee
Journal of Applied Physics 112 (12), 123702, 2012
862012
Ino. 7Gao. 3As Tunneling Field-Effect Transistors With an Ion of 50 μA/μm and a Subthreshold Swing of 86 mV/dec Using Hf02 Gate Oxide
H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee
IEEE electron device letters 31 (12), 1392-1394, 2010
812010
Effects of barrier layers on device performance of high mobility metal-oxide-semiconductor field-effect-transistors
H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 96 (10), 102101, 2010
792010
Electroforming and resistive switching in silicon dioxide resistive memory devices
BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ...
RSC Advances 5 (27), 21215-21236, 2015
692015
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 043708, 2014
672014
Study of polarity effect in SiOx-based resistive switching memory
YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee
Applied Physics Letters 101 (5), 052111, 2012
602012
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee
Applied Physics Letters 100 (8), 083502, 2012
602012
Effects of gate-first and gate-last process on interface quality of In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al 2 O 3 and HfO 2 oxides
H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 95 (25), 253501, 2009
602009
Sub-50-nmMOSFETs With Various Barrier Layer Materials
F Xue, A Jiang, H Zhao, YT Chen, Y Wang, F Zhou, J Lee
IEEE electron device letters 33 (1), 32-34, 2011
572011
InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric
F Xue, H Zhao, YT Chen, Y Wang, F Zhou, JC Lee
Applied Physics Letters 98 (8), 082106, 2011
442011
Improved electrical characteristics of metal-oxide-semiconductor field-effect transistors by fluorine incorporation
YT Chen, H Zhao, JH Yum, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 95 (1), 013501, 2009
442009
Improving the on-current of tunneling field-effect-transistors by tunneling junction
H Zhao, YT Chen, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 98 (9), 093501, 2011
422011
Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory
YF Chang, L Ji, ZJ Wu, F Zhou, Y Wang, F Xue, B Fowler, ET Yu, PS Ho, ...
Applied Physics Letters 103 (3), 033521, 2013
402013
Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory
YF Chang, L Ji, Y Wang, PY Chen, F Zhou, F Xue, B Fowler, ET Yu, ...
Applied Physics Letters 103 (19), 193508, 2013
382013
Tristate Operation in Resistive Switching ofThin Films
YT Chen, B Fowler, Y Wang, F Xue, F Zhou, YF Chang, PY Chen, JC Lee
IEEE electron device letters 33 (12), 1702-1704, 2012
362012
Fluorinated gate dielectric engineering on metal-oxide-semiconductor field-effect-transistors
YT Chen, H Zhao, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 96 (10), 103506, 2010
332010
Effects of fluorine incorporation into gate dielectrics on InP and metal-oxide-semiconductor field-effect-transistors
YT Chen, H Zhao, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 96 (25), 253502, 2010
322010
Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory
Y Wang, B Fowler, YT Chen, F Xue, F Zhou, YF Chang, JC Lee
Applied Physics Letters 101 (18), 183505, 2012
312012
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