Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 2014
113 2014 InGaAs tunneling field-effect-transistors with atomic-layer-deposited gate oxides H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee
IEEE Transactions on Electron Devices 58 (9), 2990-2995, 2011
111 2011 Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee
Journal of Applied Physics 112 (12), 2012
98 2012 Electroforming and resistive switching in silicon dioxide resistive memory devices BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ...
Rsc Advances 5 (27), 21215-21236, 2015
81 2015 Effects of barrier layers on device performance of high mobility In0. 7Ga0. 3As metal-oxide-semiconductor field-effect-transistors H Zhao, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 96 (10), 2010
79 2010 {In} _ {0.7}{Ga} _ {0.3}{As} Tunneling Field-Effect Transistors With an I_on of 50 mu {A}/mu {m} and a Subthreshold Swing of 86 mV/dec Using {HfO} _ {2} Gate Oxide H Zhao, Y Chen, Y Wang, F Zhou, F Xue, J Lee
IEEE electron device letters 31 (12), 1392-1394, 2010
78 2010 Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 2014
74 2014 Study of polarity effect in SiOx-based resistive switching memory YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee
Applied Physics Letters 101 (5), 2012
65 2012 Memory switching properties of e-beam evaporated SiOx on N++ Si substrate Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee
Applied Physics Letters 100 (8), 2012
64 2012 Effects of gate-first and gate-last process on interface quality of In0. 53Ga0. 47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides H Zhao, J Huang, YT Chen, JH Yum, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 95 (25), 2009
61 2009 Sub-50-nm F Xue, A Jiang, H Zhao, YT Chen, Y Wang, F Zhou, J Lee
IEEE electron device letters 33 (1), 32-34, 2011
58 2011 InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric F Xue, H Zhao, YT Chen, Y Wang, F Zhou, JC Lee
Applied Physics Letters 98 (8), 2011
45 2011 Improving the on-current of In0. 7Ga0. 3As tunneling field-effect-transistors by p++/n+ tunneling junction H Zhao, YT Chen, Y Wang, F Zhou, F Xue, JC Lee
Applied Physics Letters 98 (9), 2011
44 2011 Improved electrical characteristics of TaN/Al2O3/In0. 53Ga0. 47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation YT Chen, H Zhao, JH Yum, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 95 (1), 2009
44 2009 Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory YF Chang, L Ji, ZJ Wu, F Zhou, Y Wang, F Xue, B Fowler, ET Yu, PS Ho, ...
Applied Physics Letters 103 (3), 2013
40 2013 Investigation of edge-and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory YF Chang, L Ji, Y Wang, PY Chen, F Zhou, F Xue, B Fowler, ET Yu, ...
Applied Physics Letters 103 (19), 2013
38 2013 Tristate Operation in Resistive Switching of YT Chen, B Fowler, Y Wang, F Xue, F Zhou, YF Chang, PY Chen, JC Lee
IEEE electron device letters 33 (12), 1702-1704, 2012
36 2012 Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors YT Chen, H Zhao, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 96 (25), 2010
36 2010 Fluorinated HfO2 gate dielectric engineering on In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors YT Chen, H Zhao, Y Wang, F Xue, F Zhou, JC Lee
Applied Physics Letters 96 (10), 2010
35 2010 Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory Y Wang, B Fowler, YT Chen, F Xue, F Zhou, YF Chang, JC Lee
Applied Physics Letters 101 (18), 2012
31 2012 